查询词典 epitaxial

The epitaxial growth of Er_2O_3 films has been achieved on Si(001) and Si (111)substrates by MBE at the growth temperature of 700 ℃in an oxygen pressure of 7×10~(-6) Torr.

使用电子束外延的方法在p型Si(001)和Si(111)衬底上，在700℃、7×10-6Torr的条件下首次实现了Er2O3单晶薄膜的生长。

The epitaxial growth of Er203 films has been achieved on bothSi(001) and Si(111) substrates at a growth temperature of 700℃and an oxygenpressure of 7×10~(-6) Torr.

在氧气压为7×10~(-6)Torr，衬底温度为700℃的条件下，我们在Si(001)和Si(111)衬底上分别获得了单一取向、结晶状况良好的外延Er_2O_3薄膜。

Both of the twinning and epitaxial growth are important mechanisms for precipitation of titanium carbide in the TSCR steels.

总之，在钢中先行析出的Ti2CS和TiC粒子都可能成为新生成TiC的非自发形核地点，孪生和外延生长是TiC沉淀的两种重要机制

The rapid solidification and grain growth of molten bath of laser surface remelting TA15 titanium alloy was a process of directly epitaxial growth of the b grains of the unmelted substrate at the contact of the melt-pool bottom.

分析表明，TA15钛合金激光表面重熔熔池的快速凝固是一个以熔池底部热影响区顶部与熔体接触的未熔母材b晶粒为衬底的直接外延生长过程，因此热影响区顶部与熔体接触的未熔母

We investigated the epitaxial misfit strain effect on the barium titanate and barium zirconate thin films.

基于密度泛函微扰理论，论文还研究了薄膜在晶格畸变时其介电参量的变化模式。

Picture width 8 mm. Epitaxial aegirine terminations extending from arfvedsonite crystal.

图片宽度8mm。附生的霓石从钠角闪石里伸出漂亮的晶体尖端。

A thin epitaxial layer ( 10gm ) ldmos device used n - burry layer structure was proposed in the paper during the high - voltage device design , which is helpful to improve the drive circu it ? technology

在高压器件研究中，提出了一种外延层厚度为10m 采用n 埋层结构薄外延高压ldmos 器件，对进一步改进驱动电路的工艺有着积极的意义。

According to the productions which had been explored in the experiment and the Chemical process for silicon epitaxial growth in a SiHCl3i/H2 system Hitoshi Habuka etc.

根据实验检测到的产物以及由Hitoshi Habuka等人所提出的SiHCl_3／H_2反应体系的外延生长过程，首先设计了该反应体系在气相中的可能反应通道和在Si衬底表面上的可能反应通道。

The patterns of Reflection high energy electron diffraction from the epitaxial growth of Si-Ge crystal are interpreted basing on the kinetical diffraction theory of crystal.

在晶体衍射理论基础上，利用运动学理论解释了反射式高能电子衍射（reflection high energy electron diffraction， RHEED）在Si-Ge晶体外延生长过程中不同阶段出现的花样。

Metalorganic chemical vapor deposition has been used to produce high quality thin films and epitaxial lay...

金属有机化学气相沉积，是一种可制备各种高质量薄膜和外延薄层的技术。

In the United States, chronic alcoholism and hepatitis C are the most common ones.

在美国，慢性酒精中毒，肝炎是最常见的。

If you have any questions, you can contact me anytime.

如果有任何问题，你可以随时联系我。