查询词典 epitaxial

A needle-shaped high temperature phase is observed at 1 100 ℃,which may be an Sm422 phase.At temperature 1 050 ℃,the Sm123 phase formed and show two epitaxial relations on the Sm211 w...

实验分析表明，在1 100℃观察到的针状高温相可能是Sm422相；在1 050℃的包晶温度，Sm123相在Sm211晶须上形成，显示出[001]Sm211//[100]Sm123 and[001]Sm211//[110]Sm123两个外延关联。

In this dissertation, we present soft x-ray spectroscopic measurements and epitaxial growth of manganese and cobalt oxides to investigate their orbital ordering and electron correlations.

本论文系结合电子能谱技术及脉冲式雷射薄膜成长技术，来探讨锰氧化物与钴氧化物的轨域极化与电子关联。

In this work, we propose a new process to fabricate porous SiO2 as epitaxial lateral overgrowth mask.

本论文提出一个新的制程方法制作多孔二氧化矽，来做为磊晶侧向成长的遮罩。

Microstructural observation revealed that a lot of epitaxial growth fibrous AlN polytype occurred in matrix. Y_2O_3 seems to act as a densifier for in-situ formation material and as medium for growth of fibrous polytype. SiO_2 is the growth promoter for fibrous polytype. The occurrence of fibrous polytype may increase the strength and toughness of AlN ceramic composite material.

实验结果表明，AlN-Y_2O_2-SiO_2系陶瓷复合材料的抗弯强度和断裂韧性较AlN陶瓷均有大幅度的提高，微观结构观察发现基体中存在大量共生的纤维状AlN多型体(27R，21R)，系统中Y_2O_3不仅是原位生长复合AlN材料的致密剂，而且是纤维状多型体生长的媒介，SiO_2，是纤维状多型体生长的助生长剂，基体内纤维状多形体的存在提高了AlN陶瓷的强度和韧性。

Epitaxial growth of GaN on sapphire and novel substrate LiAlO〓 1 The growth mechanism of GaN on sapphire substrate was investigated using AFM, X-ray diffraction, X-ray double crystal diffraction, Rutherford back scattering etc.

阐明了衬底表面的氮化处理、缓冲层的生长对外延膜结晶形貌、结晶质量、以及外延匹配关系的影响规律。

Structure dynamics ofstrongly reduced epitaxial barium titanate (BaTiO3-x) thin films were investigated byMicro-Raman scattering technique, Rutherford backscattering spectrometry, X-raydiffraction, and asymmetric rocking curves.

我们用显微拉曼、卢瑟福背散射谱、X射线散射和非对称摇摆等实验手段研究了在10-2到10-5帕氧气压下用激光分子束外延技术生长的BaTiO3-x薄膜的结构动力学特性。

Furthermore, the oriented diamond nuclei as single crystals with facets can form on self-formed Si cones through epitaxial SiC within a short bias period of 60 s.

经由使用更短的偏压时间来作成核研究，可发现大量具方向性的单晶奈米钻石磊晶在SiC上。

We combined the concept of implant into silicide and solid phase epitaxial regrowth to achieve both requirements.

我们结合了离子植入矽化物技术制造和固态磊晶再成长的观念去达成这两个需求。

Among many other methods of making Graphene, epitaxial growth on silicon carbide is of great potential in electronic application.

尽管目前有很多种制备Graphene的方法，但就Graphene在将来集成电路方面的应用而言，在碳化硅上的外延生长法最具潜力。

Tenthly, Shaanxi Province is basically higher than the average level of the country in indices and data related to epitaxial growth and lower than the average level of the country in indices and data related to connotative growth.

第十，凡是与外延增长有关的指标和数据，陕西省大部分高于全国平均水平；凡是与内涵增长有关的指标和数据，陕西省大部分低于全国平均水平。

In the United States, chronic alcoholism and hepatitis C are the most common ones.

在美国，慢性酒精中毒，肝炎是最常见的。

If you have any questions, you can contact me anytime.

如果有任何问题，你可以随时联系我。