查询词典 epitaxial

The full width at half maximum values of the serial crystal planes of the GaN epitaxial films on Si substrates were reported.

报道了Si衬底GaN外延膜系列晶面的半峰全宽值。

The effect of δ-doping in n-type layers on crystal performance of GaN epitaxial films on Si substrates was studied by ω-scan of different crystal planes with X-ray diffraction method.

用X射线衍射方法通过不同晶面的ω扫描测试，分析了Si衬底GaN蓝光LED外延膜中n-型层δ掺杂Si处理对外延膜结晶性能的影响。

And the devices'properties and improve the properties to prepare the artificial boundary. The bi-epitaxial YBCO superconducting film with 45°grain boundary in a-b plane was made for the first time in China in this article by magnetic sputtering instrument that was designed and fabricated by ourselves. The x-ray θ～ 2θ scan 、Ф scan、rocking curve、non-symmetry diffraction and SEM、 TEM、AES etc. were utilized in the study.

为此，本工作采用自行设计制造的全金属密封超高真空磁控溅射设备，利用x射线θ～2θ扫描、Ф扫描、摇摆曲线、非对称衍射及SEM、TEM、AES等分析测试手段，在国内首次、也是至今唯一的一家，制得a—b平面内具有45°人工晶界的双外延YBCO超导薄膜，并进而得到双外延晶界Josephson结。

During the high-voltage device design, the thick epitaxial layer LDMOS which is compatible with current technology was researched. This device used piecewise VLD and multiple region structure F reduce field layer. The using of the F reduce field layer effectively reduce the surface electric field of the device, shorten the length of its drift region, enlarge the choice of range of the ion implant dose of the P layer, and effectively restrain the disadvantageously affection on the breakdown voltage of the interface charge Qss.

在高压器件研究中对与现有工艺相兼容厚外延LDMOS进行研究，该结构采用分段变掺杂多区P~-降场层，有效降低器件的表面电场，缩短器件的漂移区长度，增大P~-降场层注入剂量的选择范围，并有效地抑制界面电荷Qss对器件耐压的不利影响。

The evolution of strain energy with the aspect ratio (length/width) of the epitaxial structures was found to be affected by the height, the elastic constant of the substrates and the epilayers, and the symmetry of the lattice mismatch of these structures.

我们发现磊晶结构应变能随长宽比变化的方式将受到结构的高度、磊晶薄膜和基板的弹性系数、及晶格的对称性所影响。

Epitaxial AlN films have been successfully deposited on GaN/Sapphire substrates at low-temperature (300℃) using Helicon sputtering system.

本研究之目的是在GaN/Sapphire基板上低温成长AlN的磊晶薄膜，并探讨各种溅镀条件对AlN薄膜品质的影响，以及研究AlN/GaN介面所感应之二维电子气现象，证实介面间受极化效应感应产生的二维电子气确实存在。

The epitaxial ZnO films are prepared on Al2O3 substrates by using helicon wave plasma assisted sputtering technique. The as-grown and annealed films showed different in-plane orientations.

采用螺旋波等离子体辅助溅射沉积法在衬底Al2O3的(0001)面上沉积ZnO薄膜，所生长的薄膜在未退火和退火时表现出不同的平面内取向。

AlN MSM devices were fabricated on AlN epitaxial thin film deposited on GaN/Sapphire substrates using helicon sputtering system at the low temperature of 300°C. The device characteristic was found to be improved by in situ metallization of Al electrodes. The extremely low dark current (1.39pA at 20V), the ideal factor (1.0125) and the Schottky barrier height (0.916eV) are superior compared to those of AlN MSM in the literature. When the device was illuminated by the 150W D2 lamp, the ratio of the induced photocurrent to dark current is more than 2 orders of magnitude. The illumination effect also shows the linear relationship between the radiation power and the photo current for the MSM devices, indicating the potential applicability for deep UV sensors.

氮化铝金属-半导体-金属光侦测器则是用In situ metallization制程，利用低温回旋溅镀法在氮化镓/蓝宝石基板上沉积之氮化铝，再直接溅镀金属铝作为指叉电极，比较目前文献制作出来的氮化铝MSM元件，可得到很好的元件金半接面之理想因子1.0125，算出萧特基能障高度为0.916eV，并有很低的暗电流为1.39 pA，提升了元件的特性，使用150 W氘灯入射，光暗电流差距可到两个order，且元件之光电流与入射光功率呈线性，显示所制作之氮化铝MSM元件，很适合针对深紫外光波段侦测。

So, the biaxial strain is an important factor for the thickness effect in epitaxial manganite films, and it should be considered for fabricating a high quality of CMR films.

第四章以La_(0.7)Sr_(0.3)MnO_3外延薄膜为研究对象，研究了不同厚度的外延膜引起的外延膜电阻率的变化。

The authors made a group of diagrams which contained the information of minority carrier diffusion lengths in the epitaxial layer and the substrate according to the theoretical analysis.

导出了入射光强1和结光电压V、光吸收系数a的理论关系，其中包含了外延层和衬底少子扩散长度的信息。

In the United States, chronic alcoholism and hepatitis C are the most common ones.

在美国，慢性酒精中毒，肝炎是最常见的。

If you have any questions, you can contact me anytime.

如果有任何问题，你可以随时联系我。