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epitaxial相关的网络例句

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与 epitaxial 相关的网络例句 [注:此内容来源于网络,仅供参考]

La 0.67 Ca 0.33 MnO 3 epitaxial thin films were used as the photosensitive element of the bolometer, and the optical response of this device to the He\|Ne laser and the blackbody were measured.

用外延法生长的La0 。67Ca0 。3 3 MnO3薄膜作为测辐射热仪的辐射敏感元件,测量了该器件对黑体和He Ne激光器的光学响应。

It was found that this epitaxial CoxFe3-xO4 coating raised the coercivity of the γ-Fe2O3 from 420 to 715.

经此种方法处理后的γ-Fe2O3磁粉的矫顽力及其它磁特性有较大的提高。

It was found that this epitaxial Co-doping raised the coercivity of the γR-Fe2o3 from 420 Oe to 770 Oe.

经这样处理后的γ-Fe_2O_3磁粉的矫顽力可由原来的420Oe增大到770Oe左右。

Optimization of the use of punitive factor function in the epitaxial sustaining a conjugate gradient method...

最优化中利用惩罚因子的罚函数法的外延,连带了共轭梯度法,由于罚因子的迅速跌代增大,加速了目标函数的收敛速度。

We have calculated the epitaxial growth of CoPt alloy films on a Pt buffer layer.

而且可以作为缓冲层或底电极外延生长其他的薄膜材料及多层结构。

The epitaxial wafer is equipped with two detached quantum traps, by preparing three electrodes on the p-type layer I, the n-type layer and the p-type layer II, the two quantum traps can respectively emit light with different wavelength under applied voltage, after the epitaxial wafer is prepared to LED chip, mixing light with different wavelength emitted by the quantum trap I and the quantum trap II are obtained, or a single-color light emitted by the quantum trap I or the quantum trap II is obtained, thereby greatly extending application area of the LED.

本发明外延片设有两个分隔的量子阱,通过在p型层I、n型层、和p型层II制作三个电极,可使两量子阱在外加电压下分别发射不同波长的光,该外延片制作成LED芯片后,可获得由量子阱I和量子阱II发出的不同波长的混合光,或者分别发出由量子阱I或量子阱II产生的一种颜色的单色光,大大拓展LED的应用范围。

An N-type epitaxial layer (115), which is formed above an N-type semiconductor substrate (114) in each of a pixel region and a peripheral circuit region; a first P-type well (1) formed above the N-type epitaxial layer (115) in the pixel region; and light receiving regions (117), which are formed within the first P-type well (1) and each of which is a component of a photodiode, are included.

包括在每个像素区域和外围电路区域中的N型半导体衬底114之上形成的N型外延层115;在像素区域中的N型外延层115上形成的第一P型阱1;以及在第一P型阱1中形成的并都是光电二极管部件的光接收区域117。

Considering the shortcoming of thick epitaxial layer technology , author proposed a thin epitaxial layer ldmos used n - burry layer .

针对目前厚外延工艺的缺点,提出的薄外延ldmos 采用n 埋层,通过优化n 埋层长度、注入剂量可提高器件耐压。

The key to make bi-epitaxial film is to control the epitaxial growth of multi-layer different materials.

制备双外延薄膜的关键是要实现薄膜的多层异质外延生长。

The results show that the epitaxial island critical size which determinates growth model exists in the process of Ti growing on Fe(001) surface, the atoms on the edge of island decrease system energy through upward transportation while epitaxial island size is above the critical value.

结果表明:Ti在Fe(001)表面外延生长时存在生长模式转变的临界尺寸,临界尺寸以上,外延岛边缘原子通过向上迁移运动来降低体系能量。

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