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emitter current相关的网络例句

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与 emitter current 相关的网络例句 [注:此内容来源于网络,仅供参考]

It is shown that the maximum controllable current depends on the design of the current gain and emitter-shorted current.

结果表明,耦合晶体管电流放大系数及晶闸管射极短路电流的设计决定了器件的最大可关断电流。

From our measurement data, we find that the current gain is influenced by emitter size effect.

依量测结果可知,电流增益会受到射极尺吋效应的影响。

The United States and China, the world's largest historical contributor to climate change and the world's largest current emitter, were at the heart of the failure to reach a more substantial agreement.

美中两国既是历史上给气候变化造成最大影响的国家,也是当前最大的排放国。而这两个国家也恰恰正是导致哥本哈根无法达成一个更具实质内容协议的根本原因。

The symbol for a PNP transistor has an arrow on the emitter indicating the diredtion of current flow, always towards the base.

PNP晶体管有一个表住在发射极的箭头符号用来指示电流的流向,总是围绕在基极的。

Decreasing N diffusion width and distance between N diffusion and emitter of minority carriers current can increase MAAP efficiency.

由模拟结果可知,减小N型扩散区的宽度,减小N型扩散区与少数载流子发射极之间的距离,增加P型扩散区的掺杂浓度以及使第二个衬底接触浮空可以有效地提升多环有源保护结构的效率。

CNT emitter has larger emission current than silicon-based emitter due to its high aspect ratio geometry. The results show that emission mechanism follows the Fowler-Norheim law.

从模拟结果我们可以看出场发射机制确实有遵守Fowler-Norheim规则,奈米碳管和矽基场发射器之间的差异,主要是奈米碳管其高深宽比的几何形状所导致较大表面电场会喷出较大的电流。

In the power supply circuit, series power supply and the adjustment of the series load, the load current flows through all of the adjustments, and transistors Guozainaili worse, once output overload or short circuit, the input voltage increases in the full set of adjustment an emitter, the current surge to adjust the fierce heat, if not over-current protection measures at this time, the adjustment will be burned, power Zhengliuguan also will be greatly threatened or damaged.

中文摘要:在稳压电源电路中,串联型稳压电源的调整管与负载串联,负载电流全部流经调整管,而晶体管的过载能力较差,一旦输出端过载或短路,输入电压全部加在调整管集---射极间,其电流剧增,使调整管猛烈发热,如果此时没有过流保护措施,调整管就要被烧坏,电源整流管也将受到巨大威胁或损坏。

Current peaks for different spins in the Ⅰ-Ⅴ curve split. The confined"light"hole energy levels of the QW turn out to be an effective tunnelling channel for both"heavy"and"light" holes. Although considerable tunnelling current originate from the"heavy"hole state in the emitter region, the current in the collector is mainly carried by the"light"hole state.

无论对重空穴还是轻空穴来说,量子阱中轻空穴的束缚能级都是有效的隧穿通道,虽然隧穿电流有相当大比例由发射极重空穴态提供,但在集电极端大部分电流又由轻空穴态传导。

If the emitter ledge is too thick, current will flow through the undepleted ledge, which increases the emitter-size effect.

假如,射极突出部太厚,电流将会沿著未完全空乏的路径,横向扩散至未保护且裸露之基极表面区域,衍生非理想之大量表面复合电流。

Since Al〓Ga〓In〓P possesses larger valence band difference to GaAs and wider energy gap, minor carrier reverse injection from base and space charge region recombination in the emitter are effectively suppressed in Al〓Ga〓 In〓P/GaAs HBT. Under most circumstances, quasi-neutral base recombination current dominates the base current, and its ratio to collector current varies little with collector current and temperature, thus greatly stabilizes the current gain.

Al〓Ga〓〓In〓P/GaAs HBT由于异质结的△Ev较大,发射区禁带较宽,有力地抑制了基区少子反向注入流和发射区空间电荷区复合电流;在大多数情况下,基极电流以准中性基区复合电流为主,其与集电极电流的比值随集电极电流和温度的变化极小,稳定了电流增益。

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