查询词典 emitter current

With this mode of working the base-emitter circuit is the input side;and the emitter through base to collector circuit the output side.although these have a common path through base and emitter, the two circuit are effectively separated by the fast that as far as polarity of the base circuit is concerned,the base and upper half of the transistor are connected as a reverse biased diode.hence there is no current flow from the base circuit into the collector circuit.

这一工作模式下，基极-发射极电路是输入端，发射极通过基极，再到集电极电路的输出端。虽然它们都有一个共同的路径通过基极和发射极，这两个电路是通过和基极电路相关的尽可能的有效快速分离开的，基极和基极以上的一半以上的晶体管作为一个反偏二极管与之相连接。

In comparison with the switches based on other polytypes of SiC, the design benefits from having fewer lattice mismatches between the SiCGe and 3C-SiC. A maximum common emitter current gain of about 890 and superb light-activation characteristics may be achievable. The performance simulation demonstrates that the device has a good I-V characteristic with a turn-on voltage knee of about 4V.

结果表明，与采用其他结晶类型的碳化硅衬底相比，SiCGe与3C-SiC间较小的晶格失配有利于提高器件性能，可使其最大共射极电流增益达到890，获得最好的光触发特性和较好的I-V特性，饱和压降大约为4V。

It can be seen that besides the realization of the common-emitter gain, thus current amplification, the common-base properties were also improved due to the reduction of the common-base leakage current. We have attributed the improvement of the common-base properties and the realization of the common-emitter properties to the enhancement of the electron injection due to the utilization of the V2O5 interfacial layer.

研究发现，V2O5界面修饰层的引入明显地减小了共基极漏电流，使器件的共基极特性得到了进一步的改善，同时也使器件表现了共发射极特性，实现了电流的放大，我们已经把共基极特性的改善和共发射极特性的实现归功于界面修饰层的引入提高了电子注入的结果。

In other words, transistor emitter current will closely equal diode current at any given time.

或者说，晶体管发射极电流随时都接近二极管电流。

It is discussed in details in the paper that there are four regions depending upon the case occurred in the edge-crowding-effect of emitter current,The distributions and normalized voltage and current density,and their characters are discussed in this paper.

本文以发射极电流集边效应发生的程度，分为四个区域，详细探讨了归一化电位和电流密度分布的特点，指出：在Ⅰ？

The edge-crowding-effect of emitter current in a transistor caused by self-bias of base resistor is one of the factors to limit its capability of loaded current.

由基区电阻的自偏压引起的晶体管发射极电流集边效应，是限制晶体管承载电流能力的因素之一［1-4］。

Current flow between the emitter and base controls the current flow between the emitter and collector.the emitter of the transistor is the most heavily doped so it has the most excess electrons or holes.

由发射极到基极间的电流控制发射极到集电极间的电流，晶体管的发射极是重掺硅型的，所以它有过量的电子或空穴。练习翻译？遇到难题？快来翻吧

This constant emitter current, multiplied by a constant α ratio, gives a constant collector current through Rload, provided that there is enough battery voltage to keep the transistor in its active mode for any change in Rload's resistance.

这个恒定的发射极电流，乘以恒定的系数α，就得到流过负载Rload的恒定的集电极电流。前提是电池电压足够高，不论Rload如何变化，晶体管都能工作在放大区。

It is found that the utilization of BAlq3/Alq3 isotype heterostructure emitter further reduces the leakage current, leading the BAlq3/Alq3 isotype heterostructure-based devices to higher output current and higher common-emitter gain at the same operational voltage compared to the case of Alq3 as the emitter.

研究发现，同Alq3单发射极层结构的金属基极晶体管相比，BAlq3/Alq3异质结发射极层的使用进一步降低了器件的漏电流，使器件在相同的电压下表现了更高的输出电流和更高的共发射极增益，为进一步实现高性能金属基极晶体管提供了新的方法。

Voltage Source and Current Source, Thevenin Theory, Trouble Shooting, Characteristic Curve of Diode, Diode Models, Rectifier Circuits, Input Filtering Capacitor, Voltage Multiplier Circuits, Limiter and Clipper Circuits, DC Clampers and Peak-to-peak Detectors, Zener Diode, Zener Diode Rectifier, Photoelectric Devices, Collector-Emitter Junction, Transistor Characteristics of common-emitter, Base Bias, LED Dirver, Establishing a Stable Q-point, PNP Transistor Biasing, Transistor Biasing, Coupling and By-Pass Capacitors, AC Emitter Resistance, Common-Emitter Amplifier, Other Common-Emitter Amplifiers, Cascaded Common-Emitter Amplifiers, AC Load Line, Emitter Follower, Class B Push-pull Amplifiers, JFET Characteristic Curve, JFET Biasing, JFET Amplifier, VMOS Circuit, Differential Amplifier, Operational Amplifier, Non-inverting Feedback, Negative Feedback.

电子学实验( S0704)(1，1)/应用电子学实验( S0472)(1，1)电压源和电流源、戴维宁定理、故障排除、二极体特性曲线、二极体近似模型、整流电路、电容-输入型滤波器、倍压电路、限制器电路和峰值检测电路、直流定位器与峰对峰检测器、齐纳二极体、齐纳二极体整流器、光电元件、集射极接面、集极特性曲线、基极偏压、LED驱动器、建立一个稳定的工作点 Q 、 PNP 电晶体偏压、电晶体偏压、耦合及旁路电容、交流射极电阻、共射极放大器、其他 CE 放大器、串接共射极放大器、交流负载线、射极随耦器、 B 类推挽式放大器、 JFET 特性曲线、 JFET 偏压、 JFET 放大器、 VMOS 电路、差动放大器、运算放大器、非反向电压回授、负回授。

This paper discusses design and realizable methods of remote test output interface from logical design angle.

本文从逻辑设计的角度讨论遥测输出接口的设计及实现方法。

This also 星体投射plies to buildings, structures and geological features.

这也适用于建筑物和地质特征。