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emitter current相关的网络例句

查询词典 emitter current

与 emitter current 相关的网络例句 [注:此内容来源于网络,仅供参考]

We also know that the ratio between collector current and emitter current is called α.

我们还知道集电极电流与发射极电流之间的系数是α。

IC2 is N1P2N2 transistor base current, it makes its collector current IC1 and emitter current IA increased.

IC2是N1P2N2晶体管的基极电流,它又使得其集电极电流IC1和发射极电流IA增加。

Therefore, if we have a way of holding emitter current constant through a transistor, the transistor will work to regulate collector current at a constant value.

于是,只要我们能让晶体管的发射极电流保持恒定,它就能保持发射极电流为恒定值。

As a result, the base current of Q12 is decreased and hence the emitter current is also decreased.

结果, Q12 基地潮流被减少并且因此放射器潮流并且被减少。

Following this rationale, if we were to hold the base-emitter voltage of a transistor constant, then its emitter current should likewise be constant, given a constant temperature

根据这个基本原理,如果我们能保持晶体管发射结电压恒定,当温度恒定时,发射极电流也将保持恒定。

Because collector current is equal to base current multiplied by β, and emitter current is the sum of the base and collector currents,α should be mathematically derivable from β.

既然集电极电流等于基极电流乘以β,而发射极电流又是基极和集电极电流之和,α当然可以根据β计算出来。

Well, the α ratio works similarly: if emitter current is held constant, collector current will remain at a stable, regulated value so long as the transistor has enough collector-to-emitter voltage drop to maintain it in its active mode.

系数α的作用与之类似:如果发射极电流保持恒定,只要集电极-发射极电压足以使其保持在放大区,集电极电流也将稳定保持。

Issues added: GTO below the opening of the process and shutdown process: Located GTO anode forward voltage electric pressure, when the increase in positive gate trigger current IG, through N1P2N2 transistors amplification makes its collector current IC2 and emitter current IK increase.

问题补充:下面分析GTO的开通过程和关断过程:设GTO阳极电压力正向电压,当在门极加正向触发电流IG后,通过N1P2N2晶体管的放大作用使得其集电极电流IC2和发射极电流IK增加。

If you change the diode current by changing the resistance value of Rbias, then the transistor's emitter current will follow suit, because the emitter current is described by the same equation as the diode's, and both PN junctions experience the same voltage drop.

正因为发射极和二极管的电流用同一个方程描述,而且两个PN结共用同一个电压,每当你通过改变Rbias改变了晶体管电流,晶体管发射极电流也必将随之同样改变。

In paper the phase noise L of the transistor is taked as function of Te, Re and R_(L1) for the first time, where Ie is emitter current, Re is resistor of emitter degeneration feedback and R_(L1) is aseismatic resistor on the collector.

文中得出了晶体管的发射极电流I_e、发射极反馈电阻R_e和集电极防振电阻R_(L1)与相位噪声L或Sφ

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