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The results indicate that the electron loss timescales due to artificial injection of ELF/VLF waves in the inner and the outer radiation belts depend largely on the value of the cold-plasma parameter α*(∝ B 2/ N 0, where B is the ambient magnetic field and N 0 the electron number density), the properties of wave frequency spectrum, the wave power and the electron energy in resonance with the waves.

数值计算结果表明，在内、外辐射带由于ELF/VLF波的人工注入而造成的高能电子损失时间尺度很大程度上取决于冷等离子体参量α*(∝ B 2/ N 0，这里 B 是背景磁场， N 0是电子数密度)、电波频谱特性和功率，以及与波发生回旋共振的电子能量。

Based on Stuart et al.'s electron density evolution equation, the electron density evolution process in fused silica film irradiated by short-pulse laser for τ∈[0.015] ps were studied by means of numerical method. The effects of initial electron density N and laser pulse width τ on laser threshold intensity I and damage threshold fluence. F were analyzed respectively.

基于STUART等人的电子密度演化方程，运用数值模拟方法，研究了脉宽为τ∈[0.01， 5]ps范围内单脉冲激光作用下熔融石英薄膜中电子密度演化过程；讨论了初始电子密度、激光脉冲宽度对阈值功率密度和阈值能量的影响；分析了初始电子密度、激光脉冲宽度对多光子离化及雪崩离化的影响。

The electron location function shows the electronic density changes at both the atomic vacancies and antisites. There is an obvious absence of electronic areas where the vacancy of Ga has the dangling bonds of N, which are favourable for the sdsorption of metal atoms. In contrast, at the vacancy of N, there is more electron distribution(ELF:0.16-0.45), forming lone electron pairs which are profitably available to combine electronegative atoms.

电子局域函数显示了表面空位和替位处的电子密度变化，表面Ga原子空缺处有非常明显的缺电子区域，悬挂键临近N的电子密度增大，有利于对金属原子的吸附；N原子空位处的ELF值为0.16-0.45，有利于同电负性较大的原子结合。

The dissertation is concentrating on the topic of a high power, tunable, millimeter wave free electron laser. The tunable ability of the mm wave FEL is studied. FEL powers are improved by novel variable parameter wigglers. A high brightness electron beam is achieved for FEL. These technologies are very important for realization of high power compact free electron lasers.

本博士论文围绕高功率可调谐毫米波自由电子激光器的研究主题，研究毫米波自由电子激光的调谐特性，用新型磁场逐渐增强的摇摆器等手段提高自由电子激光的效率，研究体积小的高亮度电子束源用于自由电子激光，为研制新一代小型化高功率自由电子激光器提供关键技术。

Based on the structure, those human diseases related mutation sites are mapped onto the structure accurately. As a result, it is found that these sites are all around the electron transfer prosthetic groups or ubiquinone. And these mutations will alter prosthetic groups' binding or ubiquinone's binding, causing electron leakage from the prosthetic groups in the electron transfer chain, producing reactive oxygen species and leading to tumor formation.

利用线粒体复合物 II 的结构对已知与人类疾病相关的该复合物突变位点进行了精确定位，发现这些突变位点均位于电子传递体或辅酶 Q 结合位点的周围，它们的突变或影响了电子传递体的结合，或影响了辅酶 Q 的结合，从而导致电子传递的中断，电子逃逸到线粒体基质中或线粒体内膜中，经过一系列下游途径导致疾病的产生。

The ratio of electron spin energy to the interaction energy between electron and LO phonon decreases with increasing z, so does the ratio of electron spin energy to the interaction energy between polarons.

电子自旋能量与电子和LO声子之间的相互作用能之比以及与声子之间的相互作用能之比都随z增加而减小。

Will voltage electron beam deflection plate to tie the direction switch "is" location, rotating clockwise direction deflection plate voltage Potentiometers (RP2), the electron beam is deflected upward, the greater the voltage between the deflection plate, the electron beam deflection angle the bigger.

实验一。观察电子束在电场中的偏转将电子束偏转板电压方向开关扳到&上正&位置，顺时针方向旋转偏转板电压电位器(RP2)，电子束则向上偏转，偏转板之间电压越大，则电子束偏转的角度越大。

Compared to figleaf gourd, cucumber and sponge gourd showed higher net CO_2 assimilation, actual quantum yield of PSII electron transport Φ_(PSII, photochemical quenching coefficient, the efficiency of excitation capture by open PSII centers, rate of energy dissipation via light-independent thermal processes and fluorescence J_(f,D, energy flux via linear electron transport J_(PSII and electron flux for photosynthetic carbon reduction all the time during the measuring day.

黄瓜与丝瓜在净二氧化碳同化速率、光系统Ⅱ光化学量子效率Φ_(PSⅡ、光化学猝灭系数、开放的光系统Ⅱ中心激发能捕获效率、不依赖于光的热能与荧光耗散光能J_(f，D、PSⅡ总的光合电子流量J_(PSⅡ及用于光合碳还原的电子流量等参数上均表现出比黑籽南瓜更高的数值。

GHz ridge－loaded helical groove slow wave structure with a 20kV electron beam are given and the investigations of the effect of the ridge dimensions and electron beam parameters on the small signal gain are carried out. It is indicated from the calculation results that this type of structure is suitable for use as s SWS of high power, high gain but narrow passband millimeter TWT, of which the 3dB gain bandwidth is 3.4%. In order to increase the bandwidth, the reduction of the ridge gap or the increase of the electron beam current in an allowable range may be useful.

GHz的脊棱加载慢波结构的具体尺寸，并对此结构中小信号增益随脊尺寸的变化情况及电子注参数对其影响进行了研究，计算结果表明：此结构适宜于作为高增益窄带毫米波大功率行波管的慢波线，其3dB增益带宽为3.4%，为了展宽其工作带宽，可以适当减小间隙宽度，也可在一定范围内提高电子注电流。

Firstly, we investigate the influence of the hole injection layer on the performance of the OLED. Evidence shows that m-MTDATA exhibits a dense film structure and fine surface morphology, leading to easy hole migration. Furthermore, a low-voltage driving of OLEDs has been achieved by doping 4F-TCNQ into m-MTDATA layer. Secondly, we obtain a highly efficient OLED by using a new oxidiazoles, an efficient electron-transporting molecular materials. Finally, we have realized the efficient electron injection and transport in organic light-emitting diodes using an electron-transport layer composed of BPhen with Liq co-deposited layer. With this cohost strategy, we improve the power efficiency by～21 % while reduce the driving voltage by～13%.

首先研究了不同空穴传输层对有机电致发光器件的影响，结果表明，由于m-MTDATA具有良好的成膜性，以及空穴注入能力，可以改善空穴向发光层的注入，提高了器件的效率，进一步在m-MTDATA中掺入4F-TCNQ可以显著降低器件的驱动电压；其次，利用一种新型含氟噁二唑类衍生物做电子注入层获得了高效有机薄膜电致发光器件；最后，研究了Bphen：Liq混合层的电子传输特性，表明混合层的电子传输能力显著提高，基于共基质电子传输层的器件的电压比传统器件降低了13％而效率却提高了21％。

The absorption and distribution of chromium were studied in ryeusing nutrient culture technique and pot experiment.

采用不同浓度K2CrO4(0，0.4，0.8和1.2 mmol/L)的Hoagland营养液处理黑麦幼苗，测定铬在黑麦体内的亚细胞分布、铬化学形态及不同部位的积累。

By analyzing theory foundation of mathematical morphology in the digital image processing, researching morphology arithmetic of the binary Image, discussing two basic forms for the least structure element: dilation and erosion.

通过分析数学形态学在图像中的理论基础，研究二值图像的形态分析算法，探讨最小结构元素的两种基本形态：膨胀和腐蚀；分析了数学形态学复杂算法的基本原理，把数学形态学的部分并行处理理念引入到家实际应用中。