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Crystal structures of several kinds of materials were studied in this thesis by electron diffraction and high-resolution electron ...

利用电子衍射和高分辨电子显微学方法分析了几种类型材料的晶体结构： 1。

Crystal structures of several kinds of materials were studied in this thesis by electron diffraction and high-resolution electron microseopy .

利用电子衍射和高分辨电子显微学方法分析了几种类型材料的晶体结构： 1。

The structures and morphologies of the powders were characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy.

用X射线衍射分析产物的结构，用扫描电镜和透射电镜观察产物的形貌。

Since the first Landauer theory in 1957,theorists have attempted for 50 years to justify the drift force or electron momentum transfer assumed by Black as some electron-wind force to impart on the metal atoms and ions to move them.

自1957年第一个Landauer理论以来，理论工作者用50年试图论证飘移力，即Black假设的电子动量转移，又称电子风力，作用到金属原子和离子上，可使它们移动。

The transport and current-voltage properties of submicron GaAs MESFET device are calculated firstly based on the nonparabolic effective mass energy band model and Monte Carlo method which includes all major scattering mechanisms. The electron drift velocity, electric field and the non-homogeneity of mobility distribution in device are obtained. The influences of different gate lengths to electron drift velocity and drain current are analyzed.

根据对以GaAs、GaP和InP为主的Ⅲ-V族化合物半导体材料的能带结构和散射机制的分析，采用蒙特卡罗模拟方法，研究了亚微米尺寸的OaAs MESFET器件的电子密度分布、电场强度、漂移速度和迁移率分布等输运性质，以及栅长对器件性质的影响和电流电压特性。

Drift electron mobility, the Hall factor and Hall mobility in GaN are calculated according to Mattiessen's rule as a function of temperature for carrier concentrations with the compensation ration as a parameter on the basis of taking into account the individual average scattering momentum relaxation time of four scattering mechanisms, namely, ionized impurity scattering, polar mode optical scattering, acoustic piezoelectric scattering and acoustic phonon deformation potential scattering which have an effect on electron mobility of GaN.

考虑了对纤锌矿型氮化镓低场电子输运影响最为显著的4种散射机制－电离杂质散射，极化光学波散射，声学波压电散射和声学声子形变势散射的单个平均动量驰豫时间，采用Mattiessen's rule计算了不同补偿率以及不同载流子浓度条件下，氮化镓电子漂移迁移率，霍耳因子以及霍耳迁移率随温度的变化。

Electrons at the same electron energy level are also said to be in the same electron shell.

同一电子能级的电子被称作同一电子层的电子。

The energy state of an electron within an atom, represented by the electron energy level or shell, can theoretically represent one, two, four, eight, or even 16 bits of data.

用电子能级表示的原子中电子的能态，理论上可以表示1、2、4、8、甚至16位的数据。

lifetime of isomer, high charge state, electron energy level, electron density

中国科学院近代物理研究所兰州730000；中国科学院近代物理研究所兰州730000靳根明

At last we have tested the electric performance of the as-grown CZT. By theory of SCLC, the electron trap density of 3.505×1010cm-3 and the electron trap energy level of Et=0.5063eV were calculated.

最后对晶片的电学性能进行了测试，通过使用空间电荷限制电流理论分析得到了电子陷阱浓度为：3.505×1010cm-3以及位于Et=0.5063eV处的电子陷阱能级。

With Death guitarist Schuldiner adopting vocal duties, the band made a major impact on the scene.

随着死亡的吉他手Schuldiner接受主唱的职务，乐队在现实中树立了重要的影响。

But he could still end up breakfasting on Swiss-government issue muesli because all six are accused of nicking around 45 million pounds they should have paid to FIFA.

不过他最后仍有可能沦为瑞士政府&议事餐桌&上的一道早餐，因为这所有六个人都被指控把本应支付给国际足联的大约4500万英镑骗了个精光。