查询词典 electron-optical

Crystal structures of several kinds of materials were studied in this thesis by electron diffraction and high-resolution electron microseopy .

利用电子衍射和高分辨电子显微学方法分析了几种类型材料的晶体结构： 1。

The structures and morphologies of the powders were characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy.

用X射线衍射分析产物的结构，用扫描电镜和透射电镜观察产物的形貌。

Since the first Landauer theory in 1957,theorists have attempted for 50 years to justify the drift force or electron momentum transfer assumed by Black as some electron-wind force to impart on the metal atoms and ions to move them.

自1957年第一个Landauer理论以来，理论工作者用50年试图论证飘移力，即Black假设的电子动量转移，又称电子风力，作用到金属原子和离子上，可使它们移动。

The transport and current-voltage properties of submicron GaAs MESFET device are calculated firstly based on the nonparabolic effective mass energy band model and Monte Carlo method which includes all major scattering mechanisms. The electron drift velocity, electric field and the non-homogeneity of mobility distribution in device are obtained. The influences of different gate lengths to electron drift velocity and drain current are analyzed.

根据对以GaAs、GaP和InP为主的Ⅲ-V族化合物半导体材料的能带结构和散射机制的分析，采用蒙特卡罗模拟方法，研究了亚微米尺寸的OaAs MESFET器件的电子密度分布、电场强度、漂移速度和迁移率分布等输运性质，以及栅长对器件性质的影响和电流电压特性。

Electrons at the same electron energy level are also said to be in the same electron shell.

同一电子能级的电子被称作同一电子层的电子。

The energy state of an electron within an atom, represented by the electron energy level or shell, can theoretically represent one, two, four, eight, or even 16 bits of data.

用电子能级表示的原子中电子的能态，理论上可以表示1、2、4、8、甚至16位的数据。

lifetime of isomer, high charge state, electron energy level, electron density

中国科学院近代物理研究所兰州730000；中国科学院近代物理研究所兰州730000靳根明

At last we have tested the electric performance of the as-grown CZT. By theory of SCLC, the electron trap density of 3.505×1010cm-3 and the electron trap energy level of Et=0.5063eV were calculated.

最后对晶片的电学性能进行了测试，通过使用空间电荷限制电流理论分析得到了电子陷阱浓度为：3.505×1010cm-3以及位于Et=0.5063eV处的电子陷阱能级。

Compared with the density of states of the alloying system, the increase of the structural stability of Mg-Al alloy with Sb or Bi additions attributes to an increase in the bonding electron numbers at lower energy level below Fermi level, which mainly originates from the contribution of the valence electron numbers of Mg, Mg, Al, Bi and Sb orbits.

电子态密度的分析结果进一步表明，Mg-Al系合金中相结构稳定性提高的主要原因在于：Sb、Bi合金化后，体系费米能级以下低能级区成键电子数的增多，其来源主要是Mg、Mg、Al、Bi和Sb的价电子。

In Chapter 2, the two dimensional electron gas in heterostructures and the state density of the low dimensional electron gas are presented.

第二章给出了在异质结中二维电子气的形成过程，以及低维电子气的态密度。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。