查询词典 electron drift

Single probe ; Parallel Mach probe ; Mach number ; Plasma drift velocity ; Electron temperature ; Ion density

单探针；平行马赫探针；马赫数；等离子体漂移速度；电子温度；离子密度

The values obtained in thepresent study for the electron energy distribution function,drift velocity,ionizationcoefficient and attachment coefficient,etc.,are calculated and compared with theexperimental results reported in the literature,and the comparison is also carried outwith the values obtained from the two different types of fields.

应用Monte Carlo模拟法研究了氧气放电的电子参数，得到了在均匀电场中的电子能量分布、平均能量、漂移速度、电离系数、附着系数、迁移率及扩散系数随时间、电场强度的变化关系，并与文献上的实验结果进行了比较。

The characteristics of the MHD structure observed in the soft x-ray tomography are as follows. It is constructed with m=2 mode oscillation, so that the magnetic surface is made up of two islands. The structure of the magnetic surface is relatively stable. It rotates in the direction of the electron dia-magnetic drift, and the rotation frequency is the half of the oscillation frequency of soft x-ray signals.

通过SX反演图象分析，MHD型磁面结构的特点：一是m=2模的振荡构成，因而此磁面始终有两个岛组成；二是磁面结构相当稳定，在MHD放电过程中没有明显变化；三是磁面结构整体沿电子逆磁方向极向旋转，旋转的频率是软X射线测量的信号频率的一半。

High-frequency and high power electronic or microwave devices, because of their excellent properties such as wide band gap, high electron saturation drift velocity, low dielectric constant, high thermal conductivity, good chemical and thermal stability, and so on.

同时由于GaN基材料具有电子漂移饱和速度高、介电常数小、导热性能好、化学和热稳定性好等特点，也非常适合于制作高温、高频及大功率电子器件。

Theresults show that the electron mean drift velocity is affected by the cathode radius, theimpedance of the load diode, the inner radius of vanes and the input voltage.

结果表明电子平均漂移速度决定于阴极杆半径、负载二极管阻抗、阳极慢波叶片内径和输入电压。

The performances of devices degrade notably when the irradiation dose is larger than these thresholds.(3) The electron-hole pairs in oxides and interface states on Si/SiO〓 induced by radiation, which also can lead the voltage drift of control transistor in pixels, were the chief reason that leads the increase of dark current density in pixels.

3分析认为：辐照在像素的氧化层中诱发的电子—空穴对和Si/SiO〓界面形成的界面态使像素暗电流密度增加；同时也导致转移晶体管的阈值电压漂移，这是造成器件性能退化的主要原因。

Consequently the beam transmission problem is solved well. The general design curves of microwave plasma drift tube are developed by the theory and they can be used for development of the plasma microwave devices. Ion channel, as a important phenomenon in the interaction between electron beam and plasma, is first introduced into the study of PASOTRON, to replace the concept'plasma channel'used in general plasma microwave devices. A model is created to describe the channel performance. The channel is not stable, it is oscillatory and the oscillation frequency is larger than that of plasma.

作为电子束与等离子体相互作用的一个重要现象，本文首次将离子通道的概念引入到了PASOTRON的研究中，以区别常规的等离子体通道概念，并通过建立的模型推出离子通道并非一稳定规则的通道，而是具有振荡特性，振荡频率高于等离子体频率，推出了当满足一定条件时束外可能没有电子而成为纯的离子通道，这种状态对微波器件有重要的价值。

The labia have now been sutured together almost completely.The drains and the Foley catheter come out at the top.

此刻阴唇已经几乎完全的缝在一起了，排除多余淤血体液的管子和Foley导管从顶端冒出来。

To get the business done, I suggest we split the difference in price.

为了做成这笔生意，我建议我们在价格上大家各让一半。