查询词典 electron drift

The azimuthal electron velocity can be broken into two components: the E 譈 drift and the diamagnetic drift.

方位角的电子速度能被闯入二个成份： E 譈漂流物和反磁性的漂流物。

And the drift velocity and the average energy of electron in air are computed. The results obtained in this work will be of great importance to the research of discharges in atmosphere including dielectric barrier discharge at atmospheric pressure.

通过模拟在大气常温下O_2、N_2及O_2／N_2的直流放电过程，所得结果对进一步了解大气常温下直流放电动力学的机理具有重要意义，对大气常温下介质阻挡放电研究也具有一定的参考价值。

Some factors are introduced,including the effects of temperature on transverse effective electric field and surface roughness scattering,the dependence of the saturation drift velocity of the electron on transverse effective electric field and temperature,and an improved interface trapped charge and fixed oxide charge coulomb scattering model.

在新模型中，引入了横向有效电场和表面粗糙散射的温度依赖性，电子饱和漂移速度与横向有效电场和温度的关系，以及改进的界面陷阱电荷和固定氧化物电荷库仑散射模型等因素。

Elastic collision and inelastic collision are considered in oxygen molecule, nitrogen molecule by electron impart. The mail simulation results were as follow:(1)The variations of drift velocity and the average energy of electron with the E/N in O2 and N2 are obtained. The number of electrons for excitation, ionization, dissociation and dissociative ionization collision with the E/N and the energy of electron are analyzed emphatically.

考虑了各种弹性和非弹性碰撞过程，在纯氧气、纯氮气中，给出了不同简化场E／N条件下的电子漂移速度和平均电子能量的变化；着重分析了激发、电离、分解及分解电离碰撞的粒子数随E／N、电子能量的变化，同时计算了激发发射光谱的波长。

Secondly, the spatial distribution of transport properties of GaP and InP bulks, including electric fields, drift velocities and mobility, are calculated at different applied voltages and an overshoot phenomena in the electron densities and drift velocities of the GaP and InP bulks under the high electric field was found.

同时计算了GaP和InP体材料输运性质，分析了它们的电场强度、漂移速度和迁移率在不同偏置电压下的空间分布，以及电子密度和漂移速度在高电场下的过冲现象。

Since the first Landauer theory in 1957,theorists have attempted for 50 years to justify the drift force or electron momentum transfer assumed by Black as some electron-wind force to impart on the metal atoms and ions to move them.

自1957年第一个Landauer理论以来，理论工作者用50年试图论证飘移力，即Black假设的电子动量转移，又称电子风力，作用到金属原子和离子上，可使它们移动。

The GaAs, InP-based III-V compound semiconductors, which are known as their wide band-gaps, direct-band transition, high photoelectric conversion efficiency and high saturated electron drift velocity and mobility, become increasingly important and have been widely used in microelectronics and optoelectronics.

以GaAs，InP为主Ⅲ-V族化合物半导体材料具有很宽的带隙，大都为直接跃迁型能带，光电转换效率较高，以及具有很高的饱和电子漂移速度和迁移率。

Drift electron mobility, the Hall factor and Hall mobility in GaN are calculated according to Mattiessen's rule as a function of temperature for carrier concentrations with the compensation ration as a parameter on the basis of taking into account the individual average scattering momentum relaxation time of four scattering mechanisms, namely, ionized impurity scattering, polar mode optical scattering, acoustic piezoelectric scattering and acoustic phonon deformation potential scattering which have an effect on electron mobility of GaN.

考虑了对纤锌矿型氮化镓低场电子输运影响最为显著的4种散射机制－电离杂质散射，极化光学波散射，声学波压电散射和声学声子形变势散射的单个平均动量驰豫时间，采用Mattiessen's rule计算了不同补偿率以及不同载流子浓度条件下，氮化镓电子漂移迁移率，霍耳因子以及霍耳迁移率随温度的变化。

A formula for calculating electron-drift velocity in any ratio of argon-methane mixtures was presented.

通过分析实验数据，得到任意混合比例的Ar+CH4气体中电子漂移速率的计算公式。

The electron-drift velocity was measured as the function of the reduced electric field for 8 different ratios of argon-methane mixtures.

测量了电子在8种混合比例的Ar+CH4气体中漂移速率随约化场强的变化曲线。

The labia have now been sutured together almost completely.The drains and the Foley catheter come out at the top.

此刻阴唇已经几乎完全的缝在一起了，排除多余淤血体液的管子和Foley导管从顶端冒出来。

To get the business done, I suggest we split the difference in price.

为了做成这笔生意，我建议我们在价格上大家各让一半。