查询词典 electron drift

It is shown that the electron drift velocity decreases rapidly and the drain current decreases linearly when increasing gate length.

随着栅长尺寸的增加，栅下沟道的电子漂移速度减小，而且漏电流呈线性递减。

An important feature of the velocity-field characteristics is a differential negative resistance effect in steady state electron drift velocity.

在平均漂移速度-电场特性中发现了微分负阻效应。

Silicon carbide is a promising semiconductor with wide band-gap, highsaturation electron drift velocity, high thermal conductivity and high breakdownelectric field.

碳化硅是一种具有宽禁带、高电子饱和漂移速度、高的热导率以及高的临界击穿电场等优异特性的新型半导体材料。

SiC is a very promising material for high temperature, high power, high frequency, and radiation application because of its superior properties such as wide band gap, high critical breakdown field, high thermal conductivity and high saturation electron drift velocity.

SiC材料具有宽禁带、高临界击穿电场、高热导率、高载流子饱和漂移速度等优良特性，这些特性决定了它在高温、大功率、高频和抗辐照等方面的有着广泛的应用前景。

This larger electron drift energy is related to the lower magnetic field necessary for krypton operation.

这个能量较大的电子漂移与磁场下氪必要行动。

In the simulations we considered the effect of the lattice temperature on the steady-state electron drift velocity-field relation in GaN.

模拟中考虑了晶格温度对于GaN稳态电子速度-场关系的影响。

Silicon carbide is a promising semiconductor with wide band-gap, high saturation electron drift velocity, high breakdown electric field and high thermal conductivity.

碳化硅是一种新型半导体材料，具有禁带宽、电子饱和迁移速度高、击穿电场强度高、热导率高等特点。

The discharge mechanism of the avalanche in these gases has been analyzed. The variation patterns and impact factors of their effective ionization coefficients, electron drift velocities and diffusion coefficients have been given. The transportation of electrons is closely related to that of ions.

为验证模拟结果的正确性，本文采用PT法获得的SF〓／N〓、SF〓／CO〓和SF〓／Kr的实验结果和模拟结果进行对比，分析了它们的电子崩发展特点，给出了其有效电离系数、电子漂移速度和扩散系数的变化规律以及影响因素。

The transport and current-voltage properties of submicron GaAs MESFET device are calculated firstly based on the nonparabolic effective mass energy band model and Monte Carlo method which includes all major scattering mechanisms. The electron drift velocity, electric field and the non-homogeneity of mobility distribution in device are obtained. The influences of different gate lengths to electron drift velocity and drain current are analyzed.

根据对以GaAs、GaP和InP为主的Ⅲ-V族化合物半导体材料的能带结构和散射机制的分析，采用蒙特卡罗模拟方法，研究了亚微米尺寸的OaAs MESFET器件的电子密度分布、电场强度、漂移速度和迁移率分布等输运性质，以及栅长对器件性质的影响和电流电压特性。

In addition, electron gets the transversal drift velocity and meanwhile causes an additional temperature rise in this crossing field produced by space charge field and longitudinal solenoid field.

标 签 电子冷却空间电荷冷却效率漂移速度温升 Electron cooler Space charge Cooling efficiency Transversal drift velocity Temperature rise

The labia have now been sutured together almost completely.The drains and the Foley catheter come out at the top.

此刻阴唇已经几乎完全的缝在一起了，排除多余淤血体液的管子和Foley导管从顶端冒出来。

To get the business done, I suggest we split the difference in price.

为了做成这笔生意，我建议我们在价格上大家各让一半。