查询词典 electric voltage

Yuefeng Electric Ltd., founded in 1984, and now employees more than 600 professional and technical personnel, management staff of 25 people, of which 36 were engineers, enterprise covers an area of 11 mu, building area of more than 10,000 square meters, is a development, production, marketing high-low-voltage electrical in one scale enterprises, the company long-term commitment to national industrial development, with many scientific research units and institutions of higher learning to work closely with the professional production of transformers, voltage regulator, voltage regulator, electrical power, Frequency Min rheostat, autotransformer starting decompression box, cabinet, welding machine, electro-magnet, as well as the introduction of the development of international standards of Germany's Siemens JBK5 machine tool control transformers, SSG coherent three CNC machine tool-type transformers and other products.

跃峰电器有限公司，创建于1984年，现在员工600多人，各类专业技术人员、管理人员25人，其中工程师36人，企业占地面积11亩，建筑面积 10000多平方米，是一个以开发、生产、销售高低压电气于一体的规模型企业，公司长期致力于民族工业发展，与众多科研单位及高等院校进行紧密合作，专业生产变压器、调压器、稳压器、电源电器、频敏变阻器、自耦减压起动箱、柜，电焊机、电磁铁以及引进开发具有国际水平的德国西门子JBK5机床控制变压器、SSG数控机床三相干式变压器等系列产品。

This is a device that generates static electricity and high voltage. Its top is a ball-shaped high voltage electric pole; the bottom box is a DC high-voltage power supply.

这是一种能产生静电高压的设备：它的顶部是一个球型的高压电极，在下部底箱内有一直流高压电源。

SB2015-3 Precision Decade DC Resistance Box adopts high voltage glass glaze resistors and special high voltage seal switch.Its electric performance is very stable and insulation intension is very high.The resistance value can be adjusted under the condition of ceaselessly opening voltage(Note:The using switch should not be at the point of 0.)It is easy to operate and suitable to be used to calibrate insulation resistance meter,and suitable to be used as high resistance standard.

SB2015-3型精密十进位直流电阻箱采用高压玻璃釉电阻器及独特的高压密封开关，电性能稳定可靠、绝缘强度高、可在不断开测试电压的条件下调节电阻值（正在使用的那只开关不处在"0"位置时）、操作方便，适用于检定/校准绝缘电阻表，也可作为高阻标准。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

The "tile"is a power unit but , is voltage and voltaic product, voltage is to maintain fundamental note type computer operation operating voltage , electric current is the situation looking at operation , power consumption having diversity but, power consumption is higher if opening DVD and the trumpet , pure await the opportune moment power consumption is lower , the entirety comes say therefore the machine power consumption is not fixed, but is status have height to have consuming an electricity low.

而"瓦"为功率单位，为电压与电流的乘积，电压为维持笔记型电脑操作的基本工作电压，电流则视操作的状况，而有不同的耗电量，如开启DVD及喇叭耗电量较高，纯待机耗电量较低，所以整体来说，机器的耗电量不是固定的，而是有高有低的耗电状况。

First of all the differences between photoelectric current / voltage transformer elements in HV and UHV switchgear assembly and independent electric device of conventional open porcelain knob photoelectric current / voltage transformer are described in this paper,then the photoelectric current / voltage transformer elements in HV and UHV switchgear assembly are classified,and the working principle and technical performances of photoelectric current / voltage transformer elements in 500 kV switchgear assembly abroad are introduced in detail.

首先论述了高压和超高压组合电器中光电式电流/电压互感器元件和常规敞开瓷柱式光电电流/电压互感器独立电气设备在概念上的区别，然后对组合电器中光电式电流/电压互感器元件进行了分类。并详细介绍了国外550kV 超高压组合电器中光电式电流/电压互感器元件的工作原理及技术特性。对 ABB 公司、阿尔斯通公司、三菱公司、西门子公司等生产的245～550kV 户外超高压新型组合电器进行了较详尽地介绍和分析，主要是：①基本结构及特点；②主要技术参数

According to More Effect,when the Hore component is placed in a gradient field,at the same time the direction of the current is perpendicular to the direction of the voltage,then between the two parallel side face come out the Hore voltage. When Hore component is set in this kind of uni-gradient magnetic field and the electric current is unchanged,the voltage output of Hore component will be proportional to the position of the Hore component in the magnetic field.

根据霍尔效应可知，置于磁场中的霍尔元件若电流方向与磁场方向垂直，则在霍尔元件垂直于磁场和电流方向的两个侧面将产生电势，将霍尔元件置于强度随空间位置线性变化的磁场中，且控制电流恒定，输出就正比于霍尔元件处于磁场中的位置，因此可以用霍尔元件来测量磁场与霍尔元件间的相对位移量。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

The main products TQSW no local place-frequency electrical impulse voltage testing transformer test sets of series resonant frequency generator unit test transformer dry-type high-voltage testing transformer the ball-gap discharge frequency divider DC High-frequency DC generator, generator, inverter-current multi-function grounding impedance test system-current generator (up-flow device) performance of an integrated test bed Transformer Partial Discharge Detector mechanical properties of high-voltage switches Vacuum Tester Tester Tester Loop Resistance transformer capacity Tester-Load Switching Test Transformer tumor resistance measurement Transformer turns ratio tester tester MOA group tester insulating oil dielectric strength tester transformer loss parameter Intelligent Tester transformer loss-line parameter tester frequency interference dielectric loss dielectric loss tester anti-interference relay tester Ground Yin Xiaxian conduction tester cable fault tester tester tester generator rotor impedance large Grounding Resistance Tester Tester transformer features an integrated micro-moisture meter aperture automatic flash point tester Automatic Closed flash point detector vacuum oil filter boots pressure test device (automatic, semi-automatic) nuclear phase Instrument Series wireless digital core Instrument security tools relative to the mechanical properties testing machine clamp grounding resistance of grounding resistance measuring instrument digital megger digital high-voltage insulation resistance tester and a scalable high-altitude test tools, digital dual-phase volt-ampere facade sequence table clamp Three-phase Power Parameters Tester Calibrator lightning strike counter dedicated test wire, clamping insulation boards, pipe, cable tray mats polyimide film conductor line busbar electric appliances

扬州市苏博电气有限公司扬州市苏博电气有限公司主要产品有TQSW无局部放电工频试验变压器冲击电压发生器变频串联谐振试验成套装置试验变压器干式试验变压器高压分压器放电球隙中频直流发生器高频直流发生器变频大电流多功能接地阻抗测试系统大电流发生器变压器性能综合测试台局部放电检测仪高压开关机械特性测试仪真空度测试仪回路电阻测试仪变压器容量测试仪变压器有载开关测试仪变压器肿瘤电阻测试仪变压器变比组别测试仪氧化锌避雷器测试仪绝缘油介电强度测试仪变压器损耗参数智能测试仪变压器损耗线路参数综合测试仪变频抗干扰介质损耗测试仪抗干扰介质损耗测试仪继电保护测试仪接地引下线导通测试仪电缆故障测试仪发电机转子交流阻抗测试仪大型地网接地电阻测试仪互感器特性综合测试仪微量水分测定仪开口闪点全自动测定仪闭口闪点全自动测定仪真空滤油机绝缘靴耐压试验装置核相仪系列无线数字核相仪安全工具力学性能试验机钳形接地电阻仪接地电阻测量仪数字兆欧表数字高压绝缘电阻测试仪可伸缩高空测试工具数字双钳相位伏安表相序表三相电力参数测试仪雷击计数器校验仪专用测试导线，钳绝缘板，管，垫聚酰亚胺薄膜电缆桥架滑触线母线槽电热电器

According to the selected electric actuator determine the electrical parameters Because of different electric actuator manufacturers have different electrical parameters, design selection Butterfly Valves generally takes time to determine their electrical parameters, mainly electric power, rated current, secondary voltage control loop, are often negligent in this regard, the results of control system and the electric actuator parameter does not match the space-time caused by the work of opening trip, fuses, fuse, thermal overload relay protection is like a take-off and other failures.

根据所选电动执行器确定电气参数因不同电动执行器厂家的电气参数有所差别，所以设计选型时一般都需确定其电气参数，主要有电机功率、额定电流、二次控制回路电压等，往往在这方面的疏忽，结果控制系统与电动执行器参数不匹配造成工作时空开跳闸、保险丝熔断、热过载继电器保护起跳等故障现像。

Plunder melds and run with this jewel!

掠夺melds和运行与此宝石！

My dream is to be a crazy growing tree and extend at the edge between the city and the forest.

此刻，也许正是在通往天国的路上，我体验着这白色的晕旋。