查询词典 drain layer

In order to solve the frost heave and thaw settlement, the model tests were made in Tibetan Plateau. Two kinds of model were designed to horizontal drain structure embankment and the ventilation embankment in suit. The effect of horizontal plastic drain was analyzed in contrast with the ventilation embankment. The mechanisms of horizontal plastic drain were studied in permafrost, such as gravity draining in the superficial layer and structure stiffing in the embankment in the theory. According to the design theory, the parameters of horizontal plastic drain were confirmed in the embankment. The values of deformation were inspected by fiber monitor system in the permafrost embankment.

为了解决青藏高原的冻土浅层雨季雨水下渗和蒸发所产生的冻土冻胀与融沉问题，在青藏高原开展水平排水板结构性路基和普通通风路基的原位模型对比试验，并从理论上探讨水平排水板在多年冻土路基中浅层重力排水和结构加劲的作用机理，确定水平排水板的铺设参数；运用光纤监测技术对水平排水板在多年冻土路基中的变形进行监测，对比分析水平排水板铺设与否这2种条件下冻土路基变形监测结果。

Two kinds of model were designed to horizontal drain structure embankment and the ventilation embankment in suit. The effect of horizontal plastic drain was analyzed in contrast with the ventilation embankment. The mechanisms of horizontal plastic drain were studied in permafrost, such as gravity draining in the superficial layer and structure stiffing in the embankment in the theory. According to the design theory, the parameters of horizontal plastic drain were confirmed in the embankment. The values of deformation were inspected by fiber monitor system in the permafrost embankment.

摘 要：为了解决青藏高原的冻土浅层雨季雨水下渗和蒸发所产生的冻土冻胀与融沉问题，在青藏高原开展水平排水板结构性路基和普通通风路基的原位模型对比试验，并从理论上探讨水平排水板在多年冻土路基中浅层重力排水和结构加劲的作用机理，确定水平排水板的铺设参数；运用光纤监测技术对水平排水板在多年冻土路基中的变形进行监测，对比分析水平排水板铺设与否这2种条件下冻土路基变形监测结果。

The seventh layer to the 15th layer is high area, adoption north bound descend to of water supply method, pump to supply water to a water tank of the roof from the water supply of the underground garage, then be taken care of the net water supply toward high area by a water tank; Drain the system adoption is a dirty water, the waste water confluence system, the first floor drains alone, draining to sign the tube to establish to stretch the crest to ventilate the tube only, the dirty water was handle by septic tank again rear row to municipal soil pipe net; The fire fight system design becomes to eliminate the fire to bolt to extinguish fire the system, a fire water of the early 10 mins is supply by the fire fight water tank, normal the water supply be pumped by the fire fight Pump from the Saving pond ;The hot water system divides the area circumstance in accordance with the cold system of water, the cold water passes to give or get an electric shock after the heating apparatus concentration heat, again from promote the pump to provide to go together with the pipe line net, The hot water adopt is the closing type machine half circulatory system; The rain water adoption is inside drain the system, rain water direct row to munici p al soil pipe net.

热水采用的是封闭式机械半循环系统，分区情况和冷水系统一致，冷水通过电加热器集中加热后，再由提升泵供向配水管网；雨水采用的是内排水系统，雨水直接排向市政污水管网。

The thin film transistor may include a channel layer, a source electrode, a drain electrode, a protective layer, a gate electrode, and/or a gate insulating layer.

本发明公开了一种薄膜晶体管及其制造方法，该薄膜晶体管可以包括沟道层、源电极、漏电极、保护层、栅电极、和/或栅极绝缘层。

Sub-contractors include; Plumber, Electrician, Drain layer, Roofer, Bricklayer, Flooring and foundation contractor, Materials suppliers etc.

管子工、电工、分包商包括排水层，地板和屋顶工人、泥瓦匠基金会承办，材料供应商等。

The vertical electric field of the buried layer is enhanced due to the low k of the dielectric buried layer at the drain side,the electric field in the drift region is modulated by the compound dielectric layer with different k values,and both increase the breakdown voltage of the device.

CDL SOI结构利用漏端低k介质增强埋层纵向电场，具有不同k值的复合介质埋层调制漂移区电场，二者均使耐压提高。

Second, considering the influence of well resistance, smear effect and structure breakage of thick soft clay, the equivalent calculation method is proposed. That is, the partially penetrating sand drain ground is viewed as the double-layered ground, and its consolidation is analyzed with 1-D consolidation theory, through the transformation from 3-D consolidation to 1-D consolidation in the region of sand drain. This can overcome the disadvantage that the excess pore water is discontinuous between the region of sand drain and under-lying soft layer. To the double-layered ground, based on the consolidation mechanism under surcharge, the excess pore water pressure calculation formula is deduced under the condition of multilevel equably loading or unloading, which perfects the consolidation theory.

然后，在充分考虑竖井区井阻、涂抹作用以及土体结构损伤破坏对固结影响的基础上，将未打穿竖井地基合理地转化为双层地基，按一维固结理论计算，克服了传统固结计算方法在竖井处理区与下卧层交界面处存在孔压间断的缺点；在此基础上，从超载预压法的基本原理出发，分析了双层地基超载预压固结、沉降机理，推导了多级等速加、卸载情况下双层地基的固结计算公式，进一步完善了双层地基固结理论。

The invention discloses a high-voltage P-type metal oxide semiconductor, including a P-type substrate, a deep N-well is arranged on the P-type substrate, an N-well drift region and a P-type drift region are arranged on the deep N-well, an N-type contact hole, a P-type source and a field oxide layer are arranged on the N-well, a P-type drain and the field oxide layer are arranged on the P-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the N-well is smaller than the grid oxide layer part which is positioned above the P-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly.

本发明公开一种高压P型金属氧化物半导体管，包括P型衬底，在P型衬底上设有深N型阱，在深N型阱上设有N型阱和P型漂移区，在N型阱上设有N型接触孔、P型源及场氧化层，在P型漂移区上设有P型漏及场氧化层，其特征在于位于N型阱上方的栅氧化层部分的厚度小于位于P型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层。

The invention discloses a high-voltage N-type metal oxide semiconductor, including a P-type substrate, a P-well drift region and an N-type drift region are arranged on the P-type substrate, a P-type contact hole, an N-type source and a field oxide layer are arranged on the P-well, an N-type drain and the filed oxide layer are arranged on the N-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the P-well is smaller than the grid oxide layer part which is positioned above the N-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly, a P-type impurity injection region is arranged in the P-well, and the P-type impurity injection region is positioned below the thin grid oxide layer.

本发明公开一种高压N型金属氧化物半导体管，包括P型衬底，在P型衬底上设有P型阱和N型漂移区，在P型阱上设有P型接触孔、N型源及场氧化层，在N型漂移区上设有N型漏及场氧化层，其特征在于位于P型阱上方的栅氧化层部分的厚度小于位于N型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层，在P型阱内设有P型杂质注入区且该P型杂质注入区位于薄栅氧化层的下面。

The thin film transistor may include: a gate insulting layer; a gate electrode formed on the gate insulating layer; a channel layer formed on the gate insulating layer; and source and drain electrodes that contact the channel layer.

具体而言，薄膜晶体管可以包括：栅绝缘层；形成在栅绝缘层上的栅电极；形成在栅绝缘层上的沟道层；以及接触沟道层的源和漏电极。

It has been put forward that there exists single Ball point and double Ball points on the symmetrical connecting-rod curves of equilateral mechanisms.

从鲍尔点的形成原理出发，分析对称连杆曲线上鲍尔点的产生条件，提出等边机构的对称连杆曲线上有单鲍尔点和双鲍尔点。

The factory affiliated to the Group primarily manufactures multiple-purpose pincers, baking kits, knives, scissors, kitchenware, gardening tools and beauty care kits as well as other hardware tools, the annual production value of which reaches US$ 30 million dollars.

集团所属工厂主要生产多用钳、烤具、刀具、剪刀、厨具、花园工具、美容套等五金产品，年生产总值3000万美元，产品价廉物美、选料上乘、质量保证，深受国内外客户的青睐