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UV curable coating was used as the dispersion system. The effect of PMMA microspheres, PMMA/TiO2 nano-composite particles and dulling agent on the antiglare property, the viscosity, the mechanical property, as well as the chemicals resistance of the film was studied in this paper. The result showed that the film had better comprehensive property when 0.5% PMMA microspheres, 0.5% PMMA/TiO2 nano-composite particles and 0.75% dulling agent were doped.

紫外光固化体系成膜速度快、涂层透明性好、力学性能优良，本文采用此体系固化成膜，考察了PMMA微球、PMMA/TiO2纳米复合粒子和消光剂对薄膜防眩光性能、涂料黏度、涂膜力学性能以及耐化学药品性能的影响，确定了防眩光涂膜材料涂层的粒子配方：0.5%PMMA微球、0.5%PMMA/TiO2纳米复合粒子和0.75%消光剂。

In 2000, T. Dietl utilized theoretical simulation to be contrasted with the experimental, and he found the manganese doped gallium arsenide were identical, and derive other magnetic characteristics in its relevant semiconductor materials.

在2000年T。 Dietl 等人利用理论的模拟计算和实验的对照，发现在砷化镓参杂锰元素的吻合，并推导其他相关的半导体材料在其磁性方面的特性。

When doping the rare earth elements in nano-TiO〓, the relationships between the photocatalytic activities and the ratio of electronic affinity to ionic radius of doped atomic ion were studied.

在稀土元素对纳米TiO〓光催化剂的掺杂研究中，发现催化活性与掺杂元素的稳定氧化态的电子亲和势与离子半径的比值Ea/r有较好的相关性，而与Ea/r〓的相关性相对较低。

The third approach is about the concept of an ITO direct Ohmic contact structure on GaP window layer. The direct Ohmic contact structure is performed by the deposition of an AuBe diffused thin layer and the following activation process on the surface of a Mg-doped GaP window layer. The presence of this thin AuBe diffused layer yields the Be dominant metallic surface layer and significantly reduces the barrier height between the ITO and p-GaP layer. Via the modification of contact structure, not only the brightness was significantly increased but the reliability was comparable to the conventional LED without this structure.

第三个研究为一种具有直接欧姆接触在p型磷化镓窗层与氧化铟锡界面的制程方法，於本研究中并无习知砷化镓欧姆接触层的存在，我们利用金/金铍金属藉由热退火程序，使其金铍原子在磷化镓窗层表面形成具金属特性之薄膜层，降低磷化镓与氧化铟锡接触产生之接面能障；另外，该元件在氧化铟锡直接欧姆接触於磷化镓窗层下，除亮度具明显提升外，在稍大电流(20毫安培)元件可靠度测试下，亦未有明显衰减情形发生。

The optimized device process of p-n Alo.85Gao.15As/GaAs solar cells have been investigated. AuBe/Au and AuGeNi/Au were evaporated and metallized to form ohmic contacts of front grids and back electrodes, respectively. Heavily-doped GaAs cap layers were removed by the NH4OH:H202:H3P04:H20 selective etching solution.

分别采用真空蒸发AuBe/Au和AuGeNi/Au并合金化形成欧姆接触制作太阳电池正面栅线和背面电极；采用NH_4OH：H_2O_2：H_3PO_4：H_2O体系的选择性腐蚀液去除高掺杂的GaAs接触层；采用真空蒸发技术制备ZnS/MgF_2双层复合减反射膜。

We thought that this phenomenon [21] might be closely related with activation of Zn-acceptors and hence with ptype conduction.

但尽管在Zn-doping不懈努力，它不是可能产生干。1987年，我们发现 Zn-related发光强度大大增加，当高质量的LT-AlN Zn-doped干了缓冲用电子束辐照很cathodoluminescence期间(CL测量(21)。

The electronic and optical properties of blende phase ZnS systems doped with 3d transition metal ions were studied by the first-principles method based on density functional theory. The density of state, band structure, and absorption coefficient were calculated.

采用基于密度泛函理论的第一性原理方法对掺杂不同3d过渡金属元素的闪锌矿型ZnS系统进行了研究。

In this paper different concentrations of iron boride powders were put into the iron - based metal catalyst to get different kinds of boron-doped diamonds with high thermal stability under high temperature and high pressure conditions.

本文在铁基触媒的基础上加入不同含量的硼铁粉，用静压法合成了含硼金刚石。

In this thesis, we investigate theviability and electronic properties of ultrathin carbon naontubes, aswell as carbon nanotubes doped with boron and nitride atoms usingfirst-principles method which is based on Density Function Theory.

基于密度泛函的第一性原理，本文研究了小管径碳纳米管的稳定性和电子性质，并探讨了硼和氮掺杂对碳纳米管性能的影响。

The effect of borosilicate glass property and ZrO2, doped to muti-component fiber glass, is studied.

研究了紫外光纤用包层玻璃组分的变化以及外掺ZrO2对光纤包层玻璃化学稳定性的影响。

Plunder melds and run with this jewel!

掠夺melds和运行与此宝石！

My dream is to be a crazy growing tree and extend at the edge between the city and the forest.

此刻，也许正是在通往天国的路上，我体验着这白色的晕旋。