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The influence of the doped content of Tb3+ ions on the emission intensity was also investigated and the concentration quench occurs when the doped content of Tb3+ ions is beyond 9%, which can be explained by electric multipole-multipole interaction according to Dexters theory.

考察了掺杂离子浓度对样品发光效率的影响,Tb3+的最佳掺杂摩尔分数为9%,分析了其自身浓度猝灭机理,探讨了敏化剂Ce3+离子的加入对荧光粉发光强度的影响。

The grain shape of in-situ polymerization PAN in 10 T is open-ramified rod-like pattern with the diameter of 50nm and that of sccondary doped PAN in 10T change to spherical structure about 20-30nm, which are obvious differcnt from irrcgular reef-like particle shape of doped PAN in 0 T.

强磁场作用下的原位聚合聚苯胺颗粒呈现大约50nm的棒状,而对本征态聚苯胺在强磁场下再掺杂得到20~30nm的球状颗粒,与未加强磁场作用下的礁石状颗粒有明显区别。

You should allow him time for milk powder, doped with drink, does not have to drink it in Erie, doped with多美滋less illite put points on the line.

你应该,先给他换奶粉的时候,掺着喝,不是先喝的伊利的吗,掺着多美滋,少放点伊利的就行。

In this paper, using the pure and Li, Al, Co doped lithium and manganese oxide as examples, we discuss the influence of the doped ions.

本文主要以高温固相法制得的纯相和掺杂锂锰氧化物样品为例,讨论了掺杂对材料性能的影响。

On the base of the above-mentioned results, this paper further investigated the local micro-actuating behaviors induced by the volume change of PPy doped with ssDNA on the microdot electrode within the microchannel. It was found that, in 80μm channel the volume change of PPy film doped with ssDNA probe could enhanced the effect of DNA hybridization.

在上述结果的提示下,论文进一步在微通道内初步考察了在ssDNA掺杂修饰的PPy微点上因其电化学氧化还原所致的体积变化率而造成的局部微致动行为,发现在80μm微通道内掺杂了ssDNA探针的PPy薄膜的体积变化足以引起随后DNA杂交效果的变化。

The nitrogen-doped Czochralski and nitrogen-free Czochralaki silicon that are heavily doped with antimony are inveatigated through different heat treatments.

通过在不同条件下退火,研究氮杂质对重掺锑矽中氧沉淀的影响。

CeO2 doped ZnO nanowires were synthesized by thermal evaporation, then prepared as the heater type gas sensors. Under violet ray radiation (wave length: 370~395 nm), the gas sensitivity of CeO2 doped ZnO nanowires has been measured using static state distribution.

以物理热蒸发法制备的CeO2掺杂ZnO纳米线为气敏基料,制作成旁热式气敏元件,采用紫光(波长(为3702~395nm)激发,用静态配气法对浓度均为1×10^(-2)%的甲烷和一氧化碳进行了气敏性能的测试。

The result show that the N elements curbed the transition from anatase phase to rutile phase , Doped-N was in the structure of the TiO2 as the form of Ti-O-N and formed a new bond energy level;N-doped changed the paramagnetic of the characteristics. The paramagnetic resonance spectrum of TiO2 showed anisotropic and showed hyperfine splitting, The Lande factor of Ti3 + combined with the N is 1.956. UV-Vis absorption spectra showed that the photocatalytic ability of photocatalyst TiO2-xNx to expand to the visible region, the sample (3.84wt %) has the highest photo catalytic activity, the adsorption edge extend to 520nm and degradation is 55.54% under the visible light for 1.5h.

研究结果显示,N元素抑制了锐钛矿相向金红石相的转变,阻止了晶粒的长大,掺杂的N元素以O-Ti-N的形式存在于光催化剂结构中,形成了新的能级结构;N掺杂改变了催化剂的顺磁特征,使TiO2的顺磁共振谱线呈现各向异性,发生了超精细分裂,其中g2=1.956,是与N结合的Ti3+的朗德因子;紫外可见光吸收谱表明,催化剂TiO2-xNx的光响应能力拓展到可见光区,光吸收带发生红移;光催化测试结果显示,掺杂量为3.84的TiO2-xNx在可见光区的响应能力最高,吸收波长延伸至520nm,其光催化活性最大,1.5h降解率达到55.54%。

The absorption spectrum and fluorescence of Ni2+-doped NASL glass and glass ceramics were measured. It shows that the Ni2+-doped NASL glass ceramics has a broad fluorescence spectrum centering at 1185 nm with full width at half maximum of about 300 nm.

测试了Ni2+掺杂NASL玻璃和微晶玻璃的吸收光谱和荧光光谱,发现Ni2+掺杂NASL微晶玻璃有较宽的荧光光谱,荧光中心位于1185 nm,荧光半峰全宽约为300 nm,荧光寿命和受激发射截面的乘积为4.2×10-24 cm2·s。

The results indicate that the cell only doped with Al2O3 (Cell 1) is of the worst output performance at 850 ℃, the output power density being 0. 083 W/cm^2, and that the cell doped with Al2O3 and coated with buffer layer (Cell 2) is of the best output performance at the same temperature, the output power density being 0.120W/cm^2. AC impedance spectroscopy analyses indicate that the interface resistance and Ohmic resistance of Cell 2 are obviously less than those of Cell 1, meaning that insulative nickel aluminum spine1 is generated by the reaction of Al2O3 and NiO during the sintering at a high temperature.

结果表明:850℃时,含Al2O3的电池输出性能最差,输出功率约为0.083 W/平方公分;含Al2O3并具有过渡层的电池输出性能最好,输出功率约为0.120 W/平方公分;交流阻抗谱分析表明,含Al2O3并具有过渡层的电池的欧姆电阻与界面电阻均比不含过渡层的明显减小,说明YSZ中添加的Al2O3在高温烧结过程中,与阳极材料NiO发生反应生成不导电的镍铝尖晶石。

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