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And when sintered at 900℃for 10h, the grain shape of Mn-doped BiFeO3 ceramic suddenly changed into tetragon; All doped ceramics were examined on their electronic characteristics.

并且Mn掺杂BiFeO3陶瓷在900℃烧结10h后，其晶粒形状突变成四方体。

The results of the dissertation were concluded as follows:(1) It is essential to deposit a basic additive on the Mo-based catalysts for the synthesis of CH_3SH. The potassium-doped Mo-based catalysts exhibit the highest activity than that of the catalysts doped with the otherⅠA andⅡA group basic promoters. H_2-TPR and LRS characterizations suggest that the addition of a base leads to the transformation of octahedrally coordinated Mo to tetrahedrally coordinated Mo, thus leads to the split of low temperature reduction peaks. The interaction between the basic components and Mo lead to the formation of B-Mo interface phase, which are closely correlated with the formation of CH_3SH.(2) It has been found that Fe, Co, Ni and Te have evident promoting effects for the K-Mo/SiO_2 catalysts.

主要结果归纳如下：(1)在Mo基催化剂中，必须添加碱才具有可观的合成甲硫醇活性，在IA和IIA族元素中，K是最佳的碱促进剂，当K/Mo摩尔比为2，前驱体为K_2CO_3，采用共浸法制备的K-Mo催化剂活性最高。H_2-TPR和LRS表征显示，碱的加入导致表面八面体钼氧物种向四面体转化，催化剂的低温还原峰发生分裂，碱助剂与钼之间存在强相互作用形成了B-Mo"界面相"，该物种与合成甲硫醇密切相关。

The basic reason for oxygen concentration reduction in heavily Sb-doped CZSi was that oxygen solubility decreased when element Sb with larger radius doped degenerately into silicon crystal.

为解释重掺锑硅单晶中氧含量较普通直拉硅低，且随着掺锑量增加，氧含量下降，而重掺硼硅单晶中氧含量并不降低这一实验事实，应用热力学计算，得到重掺锑硅单晶生长时，生成Sb〓O〓的反应不能自发进行，因此不会因Sb〓O〓的大量挥发而使重掺锑硅单晶中氧含量降低。

The characters of powder are connected with the inside structure and synthesize-technics of materials. In this paper, we want to search a optimize technics of materials synthesizing, and prepare a kind of nanosize powder which shape like ball and have good dispersed character. At the same time, we want to obtain a bridge structure of Zn-O-Tb through dopping of Tb, which can achieve efficient energy transfer from ZnO hosts to excited states of dopants, The doped powder can eradiate blazing green light because of efficient emission buildup from dopants and ZnO hosts, and the powder can emission a pure light. And we want to research the structure in doped ZnO for the further research of low-tension fluorescence of ZnO.

粉体的这些特性无不与其内部结构特征和制备工艺有关，基于这些，本文的实验目的是希望能寻找一种合适的制备方法和优化工艺，制备分散性好的球形纳米颗粒，希望改善其表面形貌，同时，通过铽掺杂，希望得到一种Zn-O-Tb桥联结构，实现氧化锌基体向铽发光中心的能量传递，希望铽中心特征发射和氧化锌绿光发射能有效叠加增强，改善粉体的单色性，制备出好的复合粉体，分析清楚其结构，从而为后续低压荧光特性研究作准备。

The invention has a simply synthetic method, simply doped process, convenient control for doped quantity, avoiding the use of combustible and explosible medicine at the same time.

合成方法简单，掺杂工序简单、掺杂量便于控制，同时避免了易燃易爆药品的使用。

BST doped with proper amount of La could restrain the largen of grains, improve dielectric constant and decrease dielectric loss, whereas La_4Ba_4Ti_7O_(24) raised when more La doped, and it was harmful to dielectric properties.

适量La掺入BST中，能抑制晶粒长大，增大介电常数和降低介电损耗，但La掺杂过多会产生La_4Ba_4Ti_7O_(24)相，有损介电性能。

The possible reason is that doped Zr〓 ion enters the interstitial sites for its small ionic radius and no dipole complexes were formed. Monovalent ion F〓 has been reported to improve the scintillating performance greatly. Our results show that Agrand diagrams of F〓: PWO crystals obey an modified Cole-Cole equation. The crystals present similar dielectric relaxation phenomena to but have much higher activation energy than that of RE〓: PWO crystals, which originate from the 〓 dipole complexes. The co-doping of trivalent Y〓 and pentavalent ion Nb〓 does not always show a better scintillation performance than that of solely doped samples, which could be attributed to the existence of the 〓 dipole complexes, which counteract the solely doping effect.

而Zr〓由于离子半径太小，可能进入间隙位置，不形成类似的偶极缺陷；一价负离子F〓的掺入提高了晶体闪烁性能，阻抗谱测试结果表明F〓：PWO晶体Argand图符合修正的Cole—Cole方程，晶体同样表现出介电弛豫现象，并具有比RE〓：PWO晶体中高得多的弛豫激活能，可能起源于形成的〓偶极缺陷；Y〓和Nb〓双掺的PWO晶体并没有显示出两种离子单掺优点的叠加，阻抗谱测量结果表明，在双掺晶体中可能形成〓偶极缺陷，使两者掺杂作用相互抵消。

Stable and transparent boric silicate、Er~(3+)-doped phosphosilicate, Er~(3+)-doped aluminasilicate glass sol was prepared by the sol-gel route.

实验中采用溶胶-凝胶工艺制备了透明、稳定的硼酸盐、掺铒的磷硅酸盐、掺铒的铝硅酸盐溶胶。

For the polysilicon gate, we proposed a new stacked polysilicon film process combines polysilicon with amorphous silicon films and found doped stacked poly-Si films with lower surface roughness and smoother poly-Si/polyoxide interface than doped a-Si and conventional poly-Si films.

针对多晶矽闸极，我们提出堆叠式多晶矽薄膜沉积方法，此方法是在多晶矽薄膜上沉积非晶矽薄膜。

A novel lightly-doped channel approach for linearity improvement of InGaP/InGaAs pseudomorphic high-electron-mobility transistor device was presented. Light doping in the channel region of the conventional δ-doped InGaP/InGaAs PHEMT was adopted to provide a uniform and symmetric electron distribution in the channel region to achieve flat extrinsic transconductance distribution under different gate bias conditions.

本次实验在传统矽平面掺杂元件结构的通道区域中加入微量的杂质浓度掺杂，使得电子在元件通道层中的分布更为均匀及对称，以期望在不同的闸极偏压条件下得到较为平坦的转导值分布曲线，改善磷化铟镓/砷化铟镓假晶式高电子迁移率电晶体的线性度表现。

Plunder melds and run with this jewel!

掠夺melds和运行与此宝石！

My dream is to be a crazy growing tree and extend at the edge between the city and the forest.

此刻，也许正是在通往天国的路上，我体验着这白色的晕旋。