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We study the field enhancements in the waveguide structures by doped semiconductor material, and analyze their electromagnetic fields for different structures under the plane wave illumination or the short pulse. We design several doped silicon slots cavity and slot chains with large field enhancement, and describe their physical mechanism.

我们研究掺杂半导体波导结构对兆赫波电磁场增益之影响,使用电磁模拟针对不同结构做探讨,并分析连续波和脉冲波之电磁场变化,设计具有强场增益之掺杂半导体的矽狭缝和矽狭缝链之结构,并探讨其物理机制。

Hexagonal nano-silicon carbide thin films doped and undoped with phosphorus which possess a characteristic of the ultraviolet photoluminescence have been deposited by helicon wave plasma enhanced chemical vapour deposition technique under the high hydrogen condition in this work. The optical and electric properties of the doped nano-SiC films together with the electric and photovoltage properties of the n-p nc-SiC/Si heterojunction is studied and analyzed.

本工作利用螺旋波等离子体化学气相沉积技术在高氢气条件下制备了具有紫外发光的六角晶型纳米碳化硅,对这种材料进行了不同比例的磷掺杂,并对这种掺杂的纳米碳化硅的光学、电学特性以及nc-SiC/Si异质结的电学特性和光电压特性进行了研究。

Alternate outgrowthprocess is firstly used to form over 1.0μm thickArsenic heavily doped inner polysilicon layer and slightly doped outer polysilicon layer.T-shaped edge field emitters are fabricated with the HHC etchant.

首次采用"交替生长"技术生长内层厚度超过1.0μm重掺杂砷和外层轻掺杂砷的双层多晶硅薄膜,利用氢氟酸、硝酸、冰醋酸腐蚀液对不同掺杂浓度多晶硅选择性腐蚀的特点成功制备T形横向边缘场致发射阴极阵列。

Considerating over-all performance of mag nets, it was concluded that the optimal amount of doped-Ga was 0.5wt%. The other was that the grains size distribution of grains was narrow and grain distributed homogeneously as to microstructure of magnets when the amount of doped-Ga was 1 .Owt%;(3 ) In the magnets, there existed not only Nd2Fei4-xGaxB, but also GaNd concerning the Ga-elment form. The GaNd increased the amount of liquid and had favorable function during sintering, so it made for the increase of magnets density and the form of the second phase is good for improving coercivity.

综合考虑磁体的性能,最终得出添加0.5wt%为最佳的Ga添加量;(2)对于Nd_(15)Fe_(78)B_7+Ga系永磁体,当Ga的添加量为1.0wt%时,得到颗粒粒度分布范围窄,颗粒分布较均匀的显微结构;(3)元素Ga在磁体中不但以Nd_2Fe_(14-x)Ga_xB形式存在,而且以GaNd的形式存在,在烧结的过程中,增加了液相的数量,起助烧结的作用,有利于磁体密度的提高,形成第二相有利于矫顽力的提高。

Ca3Co2O6 and Na-doped are p-type semiconductor, whereas Ni-doped Ca3Co2O6 turns into n-type.

Ca3Co2O6及掺Na都是n型半导体,而Ca3Co2O6掺Ni是p型半导体。

The technology of the invention can effectively control the growth of the GaMnN materials to obtain GaN Mn-doped thin-film materials. According to research, the intrinsic magnetism of the Mn-doped GaN is paramagnetism.

本发明可有效地控制GaMnN材料的生长,获得高质量的Mn掺杂的GaN薄膜材料,研究发现Mn掺杂的GaN的本征磁性为顺磁性。

Finally, the relationship between the performance of doped a-Si: H and process conditions is discussed, which includes the deposition of n〓-a-Si: H and p〓-a-Si: H, the relationship between dark conductivity, photoconductivity of boron light-doped a-Si: H and process conditions, and the relationship between the stability of LCLV and S-W effect of a-Si: H.

最后讨论了掺杂a-Si:H的性能与工艺条件的关系,包括重掺杂n〓、p〓非晶硅的制备,硼轻掺杂a-Si:H的暗态电导率与工艺条件的关系,硼轻掺杂a-Si:H的光电导与工艺条件的关系,以及液晶光阀的稳定性与a-Si:H的S-W效应。

The prepared powders were characterized by XRD, UV-Vis, FTIR, N_2 adsorption, Fluorescence spectroscopy, etc. N-doped TiO_2 evidently shows its absorbance shoulder shift into visible light region. Moreover, N-doping retards the transition of TiO_2 from anatase to rutile type as well as restrains the growth of the crystal size which leads to less decrease of surface area. These characteristics are considered to benefit the photoactivity of TiO_2; When all the samples were applied to the photodecomposition of Methylene Blue under visible light(λ>400 nm), the N-doped TiO_2 show an obvious superiority when compared to the undoped TiO_2, the active hydroxyl groups are found to play a important role in this high photoactivity; When the same experiment was performed under UV light, all the samples show the consistent sequence of photoactivity as in the visible light.

通过UV-Vis、XRD、BET、IR、FL等表征手段测试表明:掺氮不仅使TiO_2的光吸收区域拓展到可见光区,而且有利于延缓TiO_2晶相的转换,从而抑止了高温煅烧下所引起的晶粒增大以及比表面积的降低,且氮源浓度越高,此现象越明显,这些特征都有利于催化剂光催化活性的提高;在主波长大于400nm的可见光催化亚甲基蓝实验当中,掺氮TiO_2的光催化活性明显优越于未掺氮样品,亚甲基蓝在90min内达到88%的脱色率。

The thermionic emission properties of rare earth doped molybdenum cathode and impregnatedcathode with sub-micron scandia doped tungsten matrix, and the secondary emission property of rare earth dopedmolybdenum cathode have been studied in this paper.

稀土掺杂钼热阴极发射特性和浸渍与亚微米斯坎迪亚掺杂钨阴极基体,以及稀土掺杂二级排放特性钼阴极进行了研究,在此文件。

Finally, the microstructure and the photovoltaic property of the boron-doped DLC and selenium-doped cadmium telluride films were also studied in this thesis.

最后,对掺硼DLC薄膜和掺硒碲化镉薄膜的微结构与光伏性质进行了实验研究。

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