查询词典 doped

In the research of prescription, through the experiments we knew the influence from the Nb_2O_5 or Y_2O_3 single donor doped on high-temperature PTC ceramic, and got the curve graph drawing the resistivity and mixing quantity. In order to restrain lead volatilize and mix the rang of donors to neutralization the harmful acceptor impurity in raw materials, adopt the prescription design of Nb_2O_5 and Y_2O_3 double donors-doped. From the result, we know that regulation proportion of Nb , Y double donors, can make high-temperature PTC ceramics semiconducting, the pottery demonstrates good electric performance.

为了能够更有效的抑制铅挥发，并且使掺杂范围能够更好的调节，以"中和"原材料中的有害受主杂质，在配方设计中采用了Nb_2O_5和Y_2O_3双施主掺杂的配方，由结果可知，适当的调节Nb、Y双施主掺杂总量及Nb、Y掺杂比例，可以使高温PTC陶瓷充分的半导化，陶瓷表现出良好的电性能。

Homogeneous or heterogeneous base material is selected; an alternately superimposed barrier layer and an alternately superimposed recessed layer are grown and formed at the extension of the base material; donor impurity and acceptor impurity are doped in the interface between the barrier layer and the recessed layer and in the interface between the recessed layer and the barrier layer, and the p type group III nitride material doped at a position selecting superlattice is obtained.

选择同质或者异质的基质材料；在基质材料上外延生长形成变换叠加的垒层和阱层，在垒层与阱层的界面和阱层与垒层的界面掺入施主杂质和受主杂质，得选择超晶格位置掺杂的p型III族氮化物材料，其中，每个生长周期的步骤为：生长带隙较宽的垒层，同时掺入受主杂质；生长施主杂质或受主杂质δ掺杂层；生长非掺的带隙较窄的阱层；生长受主杂质或施主杂质δ掺杂层；在N 2 气氛下对所得的选择超晶格位置掺杂的p型III族氮化物材料退火，即得目标产物。

It was found that copolymerization of selected acetylenes with different polarity by using palladium acetylide complex catalysts is an effective method for improving solubility of polymers, especially doped polymers, which makes the above mentioned polymers and doped ones a new type of π-conjugated sensing material for preparation of thin film humidity sensor.

研究发现，以新型过渡金属钯-炔配合物为催化剂，通过选择具有不同极性的取代乙炔单体进行共聚，可有效地提高聚合物的溶解性，尤其掺杂聚合物的溶解性，实现可溶酸掺杂，继而开发出上述系列新的π-共轭型聚炔湿敏材料，用以制备薄膜型湿敏元件。

The effects of the type and concentration of alkaline-earth metal ions are systemically investigated on removing OH groups of erbium-doped phosphate glasses, by using fluoresent lifetime of erbium-doped phosphate glasses varying with OH concentration.

以掺铒磷酸盐玻璃中铒离子寿命随OH含量变化为依据，系统研究了碱土金属离子类型和含量对磷酸盐铒玻璃除水性质的影响。

The result shows that the main factors,which affect the technical quality of the cathode assembly preparation,are surface oxidization of emissive layer,impurity pollution,doped concentration nonuniform,less variation of doped concentration gradient,the sticking stress of GaAs and glass,and the main factors,which affect the cathode activation,are the degree of vacuum for activation at lower than 8x10-8Pa,the partial pressure of H2O,CO,CO2 and C in the vacuum residial gas at higher than 10-8 Pa and the improper caesium and oxygen refining.

结果表明，影响台外工艺质量的主要因素是外延材料缺陷多、发射层表面氧化、杂质污染、掺杂浓度不均匀、掺杂浓度陡度变化小及GaAs与玻璃粘接产生的应力大；影响台内工艺质量的主要因素为阴极激活真空度低于8×10-8Pa。真空残气H2O.CO.CO2及C分压大于10-8Pa。阴极激活铯和氧源提纯不彻底。

Crystalline β-BBO thin films were successfully prepared on (001)-oriented Sr 2+-doped α-BBO substrates by using liquid phase epitaxy, pulsed laser deposition and vapor transport equilibration techniques. The films were characterized by X-ray diffraction and X-ray rocking curve. The present results manifest that the β-BBO thin films grown on Sr 2+-doped α-BBO substrates have larger degree of orientation f value and smaller X-ray rocking curve FWHM than the ones grown on other reported substrates.

采用液相外延法、脉冲激光沉积法以及气相传输平衡法在Sr 2+：α-BBO(001)衬底上生长了质量优异的β-BBO 薄膜，对薄膜进行了X射线衍射测试以及双晶摇摆曲线分析，结果表明，采用Sr 2+：α-BBO单晶作为衬底制备的β-BBO薄膜具有高的择优取向度和低的半峰宽值。

Al and N with different concentrations are heavily doped in ZnO semiconductor,and the density of states of Al and N doped ZnO is calculated by DFT mothod under the condition of low temperature.

即在低温高掺杂氮和铝原子的条件下，ZnO半导体的电导率不仅与掺杂氮和铝原子浓度有关，而且和进入价带的相对空穴数有关。

In this paper, the factors influencing the luminescence properties and luminescence quantum efficiency of doped ZnS nanoparticles are discussed, and recent developments with preparation and applications of doped ZnS semiconductor nanoparticle materials are reviewed.

本文讨论了影响掺杂ZnS纳米粒子发光性能和量子产率的因素，综述了掺杂ZnS纳米材料制备及其应用的研究进展。

In some embodiments, a graded semiconductor buffer layer is located beneath the buried oxide layer, while in other a doped semiconductor layer including Si doped with at least one of B or C is located beneath the buried oxide layer.

在一些实施方案中，渐变半导体缓冲层位于隐埋氧化物层下面，而在其他实施方案中，包含掺杂有B或C中至少一种的Si的掺杂半导体层位于隐埋氧化物层下面。

This paper reports results of Tin doped fibre pumped by a semiconductor laser diode as an optical source for methane gas detection. The spectral characteristics of the Tm doped fibre pumped by the 788 nm laser diode is studied experimently and the fibre source is used in a correlation spectroscopy measurement system.

报道了以半导体激光器泵浦掺Tm3+光纤为光源的甲烷气体相关光谱检测系统，研究了788 nm波长泵浦下掺Tm光纤光源的一些光谱特性，并在实验上用这种光源及系统对甲烷气体作了测量。

Plunder melds and run with this jewel!

掠夺melds和运行与此宝石！

My dream is to be a crazy growing tree and extend at the edge between the city and the forest.

此刻，也许正是在通往天国的路上，我体验着这白色的晕旋。