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dopants相关的网络例句

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The microstructures and thermoelectric properties of CasCog-basedoxides doped by four dopants have been investigated.

因此,对本体系来说,热压烧结是最好的制备方法。

The microstructures and thermoelectric properties of Ca3Co4Oo-basedoxides doped by four dopants have been investigated.

因此,对本体系来说,热压烧结是最好的制备方法。

The results as mentioned above showed that dopants were simultaneously substituted for V〓 and Pb〓.

上述测试结果显示掺杂离子对Pb〓和V〓是同时取代的,只是随着掺杂离子浓度增加,晶体中V〓浓度减小。

But the V〓 concentration was decreased with the increasing of dopants concentration.

采用同步辐射X射线衍射形貌术分析了PWO晶体缺陷结构。

The substrate (22) is heated after this second doping stage to activate dopants.

在这一第二掺杂步骤之后,对衬底(22)进行加热,以便激活掺杂剂。

The effect of calcining temperature and content of dopants on crystal structure, crystal size and property of modified TiO〓 nanoparticles is investigated.

重点考察了焙烧温度及金属离子的掺杂浓度对改性TiO〓纳米粒子晶型结构、晶粒尺寸及性能的影响。

Dopants for silicon wafers are found in Groups III and V of

晶圆片搀杂剂可以在元素周期表的III 和 V族元素中发现。

The influence of dopants on the scintillation properties of PWO crystals was systematically studied, and main attention was focused on the relationship between the crystal components, structure and their properties.

本论文较系统的研究了掺杂离子对PWO晶体闪烁性能的影响,讨论了掺杂晶体组成、结构和性能等方面的关系。

ABSTRACT It occurs that the performance of silicon bipolar transistors degradates seriously at low temperatures due to the gap-narrowing effect、the carrier freeze-out effect and the trapping effect of shallow dopants, which has significant influence on the operation of ultra-high-speed bipolar circuits and BiCMOS circuits at low temperatures.

硅双极晶体管由于禁带变窄效应,载流子冻析效应和浅能级杂质陷阱效应的作用,其电流增益和频率性能在低温下严重退化,从而极大地影响了低温高速双极电路和高性能的低温BiCMOS技术的发展。

It can be easily doped high-quality n-type, but it is difficult to dope p-type. ZnO has largely failed to live up to its potential due to its "asymmetric doping" limitation, such as self-compensation, deep acceptor level, and low solubility of the acceptor dopants.

高质量的n型ZnO很容易实现,但是ZnO的p型掺杂由于其固有的极性却非常困难,这主要是因为ZnO中本征缺陷具有强烈的自补偿,受主元素在ZnO中多为深能级并且固溶度较低。

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