查询词典 donor impurity
- 与 donor impurity 相关的网络例句 [注:此内容来源于网络,仅供参考]
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The paper solved the problems of less valid data in thermal infrared imager,impurity being on surface of specimen and uneasy dipartite corrosion area in image which happened in detection of structure parts' hidden corrosion by thermal wave imaging.Firstly,the contrast of one unheated image was enhanced by self-adaptive mathematical morphology sharpening,and then location of the impurity was confirmed by change of the image grads.
针对飞机结构隐藏腐蚀热波成像检测中出现的试件表面存在杂物、热像仪中有用数据较少、图像序列中腐蚀区域不明显等情况,首先通过对加热前的一幅图像进行自适应形态学锐化处理,提高图像的对比度,并根据图像梯度的变换情况确定出杂物的位置。
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On the silicon substrate an epitomical layer is made,where IC components are formed subsequently.In an CVDprocess,the silicon substrates places in a vacuum crystal tube are first heated to 1,600°C by high-frequency radio power and then H⒉Cl⒉Si and certain gaseous compounds of As or P is injected into the tube to make a deposit of several um on their surface.Ions of As or P are impurity deliberately added to the singl-crystalline silicon structure to supply electrons that transmit "negative"current in the silicon crystals,which is called n-type silicon.Bcan be added as impurity to produce p-type silicon that supplies holes for transmitting "positive"current.Whether a p--type of an n-type silicon substrate is needed depends on what type of transistors is expected to be manufactured on it:n-p-n type of p-n-p type
对硅衬底上的一个epitomical层了,而IC零件形成subsequently.in一个CVD法(化学气相depsition )过程中,硅衬底的地方在真空晶体管均先加热至1600 ° C时,由高频率的无线电功率,并然后h ⒉氯⒉硅和某些气态的化合物,砷或P ,是注入试管,使存款的几位嗯对他们surface.ions的作为或P是杂质刻意添加到单结晶硅的结构,以供应电子传递的&负面&目前,在硅晶体,即所谓N型silicon.b ,可以增加一条,作为杂质产生的p型硅供应孔转递&积极& current.whether一个P -类型的一个n型硅衬底,是需要靠哪些类型的晶体管预计将在制造上它: NPN型的PNP型
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The variational method and the effective mass approximation are used to calculate the phonon effects on the hydrogenic impurity states in a cylindrical quantum wire with finite deep potential by taking both the couplings of the electron-confined bulk longitudinal optical phonons and the impurity-ion–LO phonons into account.
采用有效质量近似和变分方法,同时考虑电子-约束型体纵光学声子及杂质离子-LO声子耦合,计算了有限深柱形量子线中杂质的极化效应。
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The mechanism of colouration by irradiation of topaz is also discussed here, suggesting that the colour is induced by integrated effect of impurity elements, impurity ion center and electron hole center.
在辐照改色的条件、过程和结果上,众多学者的研究成果基本上是一致的,但在黄玉的赋色
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With the aid of scanning electron microscope, the experiment was made about how the filter of deposition chamber influences the content of impurity in film and the result of this test showed that the structure, number of filter spacer strongly influences the impurity content of film.
在扫描电镜下观察了沉积腔的过滤对薄膜杂质含量的影响,观察结果表明:过滤挡块的数量、结构对过滤宏观粒子的效率具有很大的关系,当弧形腔中复合挡块数量4块时,在扫描电镜已很难发现有宏观粒子。
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For considering the electron-phonon coupling in the problem of impurity absorption band, a set of normal modes of lattice vibration were formed by the linear combination of plane waves in order to present fully the site symmetry of the impurity.
将晶格振动的平面波线性组合得到一组充分反映杂质格位对称性的正则模。
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The invention discloses a high-voltage N-type metal oxide semiconductor, including a P-type substrate, a P-well drift region and an N-type drift region are arranged on the P-type substrate, a P-type contact hole, an N-type source and a field oxide layer are arranged on the P-well, an N-type drain and the filed oxide layer are arranged on the N-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the P-well is smaller than the grid oxide layer part which is positioned above the N-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly, a P-type impurity injection region is arranged in the P-well, and the P-type impurity injection region is positioned below the thin grid oxide layer.
本发明公开一种高压N型金属氧化物半导体管,包括P型衬底,在P型衬底上设有P型阱和N型漂移区,在P型阱上设有P型接触孔、N型源及场氧化层,在N型漂移区上设有N型漏及场氧化层,其特征在于位于P型阱上方的栅氧化层部分的厚度小于位于N型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层,在P型阱内设有P型杂质注入区且该P型杂质注入区位于薄栅氧化层的下面。
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A three layers BP neural network model for the corrosion weight-loss of the gas turbine wheel part in heavy oil impurity environments was set up by using Nimonic 80A corrosion weight-loss data in the different heavy oil impurity environments, and the influence law of the gas turbine wheel part corrosion weight-loss was predicted.
利用三层BP神经网络,根据已有的镍基合金(Nimonic 80A合金镍基沉淀硬化)在不同重油杂质环境参数下的腐蚀速度数据,建立了燃气轮机的涡轮部件在重油杂质环境中腐蚀失重的人工神经网络模型,并进一步预测了腐蚀失重。
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For a given temperatures the mobility decreases with increasing impurity concentration because of enhanced impurity scatterings.
例如样品掺杂浓度为时,在一定的温度,迁移率随着杂质浓度提高而下降,因为杂质散射增强了。
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When a donor or an acceptor impurity is added to a semiconductor, we say that the material has been "doped".
当半导体中加入了施主感受主杂质,我们就说该物质"掺杂"了。
- 相关中文对照歌词
- Heart Donor
- Swagger Right
- Too Much Of Me
- DOS
- Clean This House
- Clean This House (Remix)
- You Can Call Me Leisure
- Suffocate
- Meltdown
- This Man
- 推荐网络例句
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We are in a good position to meet your requirements.
我们完全可以满足你方的需求。
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We are all pervade d with a sense of disaster.
我们普遍有大祸降临的感觉。
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Points out that the switching frequency、the input inductance and the output power all have great contribution to the input-current THD. When the output power goes up, the input current harmonic content keeps almost constant, thus the THD goes down.
指出开关频率、输入电感和输出功率对输入电流THD有显著影响,发现整流器输出功率增加时,输入电流谐波含量基本不变,从而输入电流THD减小。