查询词典 diode

Measurements of BE and BC junction diode properties at different temperatures have indicated that the rapid growth of BC junction leakage current with temperature is the cause of HBT degradation.

通过测量BE结和BC结在各温度的二极管特性，发现高温下BC结漏电流急剧上升，导致HBT性能退化。

A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6μm industrial CMOS technology.

采用工业标准0.6μm CMOS工艺设计了以反向击穿硅p-n结为基础的光发射器件。

The heat-reaction characteristics of Ni/Si and TiN/Ni/Si structure and the regularity for forming the NiSi film have been studied deeply and formed the excellent Ni-salicide shallow junction diode.

文中对Ni／Si和TiN／Ni／Si的热反应特性以及NiSi薄膜的形成规律进行了详细的研究。制备了优质的Ni硅化物浅结二极管。

Connect the inductor/rectifier diode junction to LX and

将电感/整流二极管连接点接至LX，并尽可能减小走线长度，以降低

The thermal distributionand an expression of the maximum temperature have been obtained or the first time whenthe Q -switched Nd:YAG laser irradiates upon the PIN junction optoelectronic diode.

得到了Q开关YAG激光与PIN结光电二极管器件相互作用时的热分布、最高温度表达式和对应的实验结果。

The n-type gate modulation could be explained by the bending effect of valence band in the Schottky-barrier junction. The photoconductive diode and optical switch behavior was demonstrated for the first time from a C/CNX multi-walled nanotube junction with a Schottky barrier. Theconductivity of nanotube can be reversibly changed by 3 to 4 orders of magnitude when the 5 mW cm2 white lights was turned on and off.

器件原理是栅极静电场调节碳纳米管和CNx纳米管间的Schottky势垒的高度和宽度，从而影响载流子的传输。8首次利用单根CN万／C纳米管作为半导体材料制备了Schottky光导二极管和光开关。

The resonance tank includes four p-n junction diode varactor pairs and a spiral inductor for each differential VCO, and a voltage- level-shift circuitry is utilized to decide proper DC levels for each pair of varactors.

此共振腔由四对PN接面式可变电容器及一个螺旋型电感所组成，并有一个电位偏移电路用来适当决定每对可变电容之偏压点。

Using the mechanism, we also fabricated large-area silicon nanowire p-n junction diode arrays by chemical etching of planar silicon p-n junction wafers in aqueous HF solution containing appropriate silver nitrate near room temperature.

进一步研究了硅衬底在HF-MoxMox=KAuCl4、K2PtCl6、Cu(NO32、Ni(NO3)2、Mg(NO3)2等氧化剂混合水溶液里的腐蚀行为，并提出了一种新的硅纳米线形成机制－金属枝晶辅助纳米电化学机制。

Metal-Semiconductor Junction; Schottky Diode

25 金属-半导体接面；萧特基二极体

And the pn-junction diode, the bipolar junction transistor, the metal-oxide-semiconductor capacitor, and the field-effect transistor are covered in 2nd part.

除此之外，针对现在主流的MOS器件与工艺，讨论现代MOSFET的发展趋势。

Nowadays, most of research are to build a transmutative Petri Nets through adding controlling place sets, controlling arc sets and controlling policy to the basic Petri Nets, while the Controlled Petri Nets could be used to argue many controlling theory problems conveniently and to induce many logically and physically supervisory and solve the Event Feedback Controlling Problems and State Feedback Controlling Problem in DEDS supervisory theory.

目前大多数的研究表现为在变形后的受控Petri网基础上，利用各种方法求得各种逻辑型、结构型控制器，解决DEDS监控理论中的事件反馈控制问题与状态反馈控制问题。

On one hand, there are discussions with the works council and union about extension of short time working up to the end of September.

一方面，有讨论，工程理事会和联盟关于延长工作时间短至9月底。