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detectors相关的网络例句

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A CMOS front-end ASIC for semiconductor radiation detectors is proposed.The ASIC comprises a charge sensitive amplifier,a gm-C type shaper,a peak detect and hold circuit,and two discriminators.The PDH and the discriminators,together with some logic circuits,provide the capability to reject trailing edge pile-up.The circuit has been designed in a 0.5?

提出了一种用于半导体辐射探测器读出的CMOS前端电路,该ASIC电路包含电荷灵敏放大器、跨导-电容型脉冲成形器、峰值检测/保持电路和甄别器,后两者结合一些逻辑电路实现了抑制脉冲成形器输出波形尾缘堆积的功能。

Dragon Runner SUGV can adapt to fit mission scenarios such as reconnaissance inside buildings, sewers, drainpipes, caves and courtyards; perimeter security using on-board motion and sound detectors; checkpoint security; in-vehicle and under-vehicle inspections; and hostage barricade reconnaissance and negotiation.

&龙信使&可以用于建筑物、下水道、排水管、洞穴以及庭院的内部侦查;使用自身携带的动作和声音探测器进行边界安全任务;执行检查站安全任务;车辆内部和车下检查;以及用于人质、路障的侦查和谈判工作中。

Resonant-cavity-enhanced photodetectors are a new type of detectors developed over the past decade.

共振腔增强型光电探测器是近十年发展起来的新型探测器。

Two InAs quantum dot samples have been grown by the solid source molecular beam epitaxy and fabricated to detectors.

利用分子束外延生长获得的两个InAs量子点样品制备了n型的量子点红外探测器。

The pitch of the array of detectors (1) is smaller than the pitch of the incident intensity pattern so that the latter is oversampled, yielding high accuracy.

探测器阵列(1)的间距小于入射强度辐射图的节距、使得后者被过抽样,由此得到高精度。

The influence of model error on transient detecting performance and a holding condition for non-centralized parameter are analyzed carefully. Furthermore, the performances of critical sampled and oversampled Gabor transform based detectors are investigated too.

在现有方法的基础上,对模型失配误差对检测性能的影响作了进一步深入的分析,推导了非中心化参数的成立条件并详细分析了两种情况下的暂态检测器的性能。

At the present time, their size has arrived at nanometer scale, and it approximately takes several picoseconds, or even shorter time, for free carriers to transport during such small distances. Therefore, research of carrier dynamics in silicon on shorter and shorter time scale is urgently developed. Processes on such short time scale are difficultly measured by traditional electronic method, so ultrafast spectroscopy method is the only choice of carrying out such experiments. Additionally, application of photoelectric detectors is severely influenced by laser.

近年来,硅半导体器件尺寸不断变小,目前已经缩小到了纳米尺度,载流子在这个尺度内的输运时间大约在ps量级,这促使人们需要对越来越短的时间尺度内硅的载流子动力学进行研究,传统的电子学方法很难对这么短时间尺度内发生的现象进行测量,超快光谱探测几乎成了进行这类研究的唯一测试手段。

In recent years, size of silicon devices has been decreasing. At the present time, their size has arrived at nanometer scale, and it approximately takes several picoseconds, or even shorter time, for free carriers to transport during such small distances. Therefore, research of carrier dynamics in silicon on shorter and shorter time scale is urgently developed. Processes on such short time scale are difficultly measured by traditional electronic method, so ultrafast spectroscopy method is the only choice of carrying out such experiments. Additionally, application of photoelectric detectors is severely influenced by laser.

近年来,硅半导体器件尺寸不断变小,目前已经缩小到了纳米尺度,载流子在这个尺度内的输运时间大约在ps量级,这促使人们需要对越来越短的时间尺度内硅的载流子动力学进行研究,传统的电子学方法很难对这么短时间尺度内发生的现象进行测量,超快光谱探测几乎成了进行这类研究的唯一测试手段。

These detectors are low impedance devices, typically 10 to 150 ohms, and require a low voltage noise preamplifier.

这些探测器是低阻抗器件,通常是10至150欧姆,而且还需要一个低电压噪声前置放大器。

Radiation detectors that use the scintillators are also described, as are related methods for detecting high-energy radiation.

为了进一步改进这些卤化物闪烁体的阻止本领和闪烁效率,公开了向其中添加铋。本发明还描述了利用该闪烁体的辐射探测器,以及探测高能辐射的相关方法。

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