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demonstration diode相关的网络例句

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与 demonstration diode 相关的网络例句 [注:此内容来源于网络,仅供参考]

Sales categories: small-signal switching diodes, Short diode, rectifier diode fast recovery diode, varactor diode, stable voltage diodes, transient suppression diodes, PIN junction diode, high-frequency detector diode, rectifier bridges multi-group Product Packaging: SOD-123 SOD-323 SOD-523 SOD-106 DO-214AA DO-214AB DO-214AC SOT-23 SOT-323 SOT-143 SOT-343 Sales Series: 1SS Series 1SV Series 1SR Series BAS Series HVU Series BB Series RB Series RD Series SS Series MMBD Series SMAJ Series SMBJ Series SMCJ Series MBR Series HSMS Series HSMP series ......

销售类别:小信号开关二极管、肖特二极管、整流二极管快恢复二极管、变容二极管、穏压二极管、瞬变抑制二极管、PIN结二极管、高频检波二极管、多层组整流桥等产品封装:SOD-123 SOD-323 SOD-523 SOD-106 DO-214AA DO-214AB DO-214AC SOT-23 SOT-323 SOT-143 SOT-343 销售系列:1SS系列 1SV系列 1SR系列 BAS系列 HVU系列 BB系列 RB系列 RD系列 SS系列 MMBD系列 SMAJ系列 SMBJ系列 SMCJ系列 MBR系列 HSMS系列 HSMP系列。。。。。。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业,不在行,求高手帮忙。谢谢!具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

In a large-scale laboratory, often because the target is too small demonstration, too, leading many people can not see the scene of the demonstration, the impact of the demonstration effect, this time on the physical projection booth can be applied to function, Demonstration of the demonstration to the projection screens showing real-time or on TV.

在大规模的实验室中,往往会因为演示者的目标太小、太远,导致很多人没有办法看清楚现场的演示过程,影响演示的效果,这时候就可以应用展台实物投影功能,把演示者的演示过程实时放映到投影屏幕或是电视机上。

Voltage Source and Current Source, Thevenin Theory, Trouble Shooting, Characteristic Curve of Diode, Diode Models, Rectifier Circuits, Input Filtering Capacitor, Voltage Multiplier Circuits, Limiter and Clipper Circuits, DC Clampers and Peak-to-peak Detectors, Zener Diode, Zener Diode Rectifier, Photoelectric Devices, Collector-Emitter Junction, Transistor Characteristics of common-emitter, Base Bias, LED Dirver, Establishing a Stable Q-point, PNP Transistor Biasing, Transistor Biasing, Coupling and By-Pass Capacitors, AC Emitter Resistance, Common-Emitter Amplifier, Other Common-Emitter Amplifiers, Cascaded Common-Emitter Amplifiers, AC Load Line, Emitter Follower, Class B Push-pull Amplifiers, JFET Characteristic Curve, JFET Biasing, JFET Amplifier, VMOS Circuit, Differential Amplifier, Operational Amplifier, Non-inverting Feedback, Negative Feedback.

电子学实验( S0704)(1,1)/应用电子学实验( S0472)(1,1)电压源和电流源、戴维宁定理、故障排除、二极体特性曲线、二极体近似模型、整流电路、电容-输入型滤波器、倍压电路、限制器电路和峰值检测电路、直流定位器与峰对峰检测器、齐纳二极体、齐纳二极体整流器、光电元件、集射极接面、集极特性曲线、基极偏压、LED驱动器、建立一个稳定的工作点 Q 、 PNP 电晶体偏压、电晶体偏压、耦合及旁路电容、交流射极电阻、共射极放大器、其他 CE 放大器、串接共射极放大器、交流负载线、射极随耦器、 B 类推挽式放大器、 JFET 特性曲线、 JFET 偏压、 JFET 放大器、 VMOS 电路、差动放大器、运算放大器、非反向电压回授、负回授。

The principle of constant power drive is: PD converts the change of output light power of laser diode into the change of diode current, and the change of current is feed back to voltage-current converser which adjusts output current of driver to compensate the laser diode.

这样,当激光器的输出光功率衰减时,驱动器相应的增大输出电流;当激光器的输出光功率增强时,驱动器就相应减小输出电流。对许多激光器应用来说,最希望脉冲输出,因为脉冲输出只有极小的结发热。

As a diode turns on, the equivalent resistance of the diode goes down as the diode turns on harder.

作为一个二极管转转,等效电阻的二极管走低,由于二极管轮流就更难。

The luminescence power of semiconductor laser diode is tested after the radiator element of laser diode is made and the drive circuit is designed. Then, chaos mathematic model is introduced to produce deterministic class stochastic signal and C langrage program, which is based on the hardware circuit design of MSP430, is designed and on-line debugged to implement the dynamic stimulation effect and avoid the body adaptability with the duty cycle of chaos sequence. The duty cycle is adjusted and controlled to accomplish the reinforcing and reducing in moxibustion. At last, Average power of laser diode is tested under the conditions of different duty cycles and the waveforms are collected by applying virtual instrument.

在半导体激光器散热装置的特别制作及工作驱动电路的设计基础上,完成半导体激光器发光功率的测试,然后引入混沌数学模型方法来产生确定性的类随机信号,在 MSP430 单片机硬件电路设计的基础上,应用单片机 C语言进行程序设计并在线调试,实现传统灸法的动态刺激效果,采用混沌序列占空比信号消除人体适应性,调整和控制输出占空比的改变以达到灸疗的补泻手法的实现,最后对不同控制占空比情况下激光器输出的平均功率进行测试,完成工作波形的采集。

The laser diode and the chip of the laser diode driver and the 4∶1 multiplexer,which are realized in different materials and processes,are fabricated on one same ceramic substrate using a film circuit to make up one opto-electronic integrated circuit,i.e.,an OEIC.The chip and the diode are realized with a 0.35μm CMOS process and with wet etching,polymer planar, and lift-off technologies, respectively.The module is encapsulated with a wing shell.

该发射机采用薄膜电路和激光焊接耦合技术将高速集成电路和光电子器件进行混合集成,其中高速集成电路是采用0.35μm硅CMOS工艺实现的单片4∶1复接器加激光驱动器芯片,光电子器件是采用湿法腐蚀、聚合物平坦和lift-off等技术实现的激光器芯片,最终混合集成模块采用蝶形管壳进行封装,体积小、性能优良。

The creative aspects in this dissertation are summarized as below:(1) In relation to the BJT/FWD integrated device, two new ideas are proposed. One is to extend the diode anode metalization to the region between the BJT and the diode regions to realize a Schottky contact to release the influence of the BJT region on the diode switching performance.

本论文创造性的工作包括以下三个方面:(1)在双极功率三极管与续流二极管构成的集成器件方面,提出了两个创新点,一个是将集成二极管的阳极金属化延伸到二极管和功率三极管之间的区域形成肖特基接触,以此来减弱同一芯片上的功率三极管区域对续流二极管开关速度的影响;另一个创新点是将集成二极管的结构由传统的PiN结构替换成含有肖特基接触的MPS结构。

The laser diode system is composed of three external cavity diode lasers and four injection diode lasers and a tapered amplifier. Four laser beams as 40K and 87Rb cooling and repump lights are obtained by using acoustic optic modulators to offset the frequencies from the three ECDL lasers. Four light beams with the different frequencies are injected into four slave lasers for injection locking, then Rb cooling light, K cooling light and K repump light are injected into a semiconductor tapered amplifier in a master oscillator-power configuration.

采用三台外腔光栅反馈半导体激光器、四台注入锁定激光器和一台半导体激光放大器组成激光系统,三台外腔光栅反馈半导体激光器通过声光调制器产生四束光,分别作为40K和87Rb原子的冷却光和再抽运光,四束不同频率成份的激光分别注入锁定四台从激光器,然后Rb cooling光、K cooling光和K repump光再同时注入半导体激光放大器进行放大。

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