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When substrate temperature is below 650℃, the Ti〓N crystals are dispersively distributed in the amorphous TiN〓 film deposited by ion beam sputtering.

在离子束溅射制备的TiN〓薄膜中，当沉积温度在650℃以下时，Ti〓N晶体弥散分布在非晶的TiN〓薄膜中；而650℃以上沉积的薄膜中主晶相为TiN，沉积温度越高，TiN相的（111）织构越明显。

In the Secondone,we presented a simple and expedient electrolytical reductionmethod to grow molybdenum blue bronze crystals from salts melts.The structure and composition were verified by single-crystal X-raydiffraction and XPS electron-probe analysis.

通过XPS和四园单晶X-射线衍射方法对单晶成份和结构，利用汇聚束电子衍射和STM方法对单晶的群对称性及表面电子结构进行分析研究，结果表明：生长的单晶具有高质量，且与国外制备的单晶一致，给进一步深入的研究工作提供了可靠的依据。

Electrooptic properties of NW/NB-PSCTLC has been systematically studied and optimized on the basis of investigation of morphology and alignment of polymer network formed in liquid crystals.

本文从研究液晶中形成的聚合物网络的形貌和排列特性出发，对两种模式PSCTLC的电光特性进行了系统地研究和优化。

The electrooptic effect of the optical active crystals is studied in the experimental set of polarized light interference.

研究了旋光晶体在偏光干涉实验中的电光效应，给出了旋光晶体在偏光干涉实验中出射光强与晶体旋光性之间关系的表达式I =A20 cos2 β-l ，以及与旋光晶体电光效应之间关系的表达式I =A20 cos2 β-l+(n2 -n1)l 。

If no exercise is applied for several months, the crystals engrain themselves, making it more difficult to dissolve.

如果几个月都不&exercise&，结晶将会再次集结，并且使之溶解将更加困难。

On the silicon substrate an epitomical layer is made,where IC components are formed subsequently.In an CVDprocess,the silicon substrates places in a vacuum crystal tube are first heated to 1,600°C by high-frequency radio power and then H⒉Cl⒉Si and certain gaseous compounds of As or P is injected into the tube to make a deposit of several um on their surface.Ions of As or P are impurity deliberately added to the singl-crystalline silicon structure to supply electrons that transmit "negative"current in the silicon crystals,which is called n-type silicon.Bcan be added as impurity to produce p-type silicon that supplies holes for transmitting "positive"current.Whether a p--type of an n-type silicon substrate is needed depends on what type of transistors is expected to be manufactured on it:n-p-n type of p-n-p type

对硅衬底上的一个epitomical层了，而IC零件形成subsequently.in一个CVD法（化学气相depsition ）过程中，硅衬底的地方在真空晶体管均先加热至1600 ° C时，由高频率的无线电功率，并然后h ⒉氯⒉硅和某些气态的化合物，砷或P ，是注入试管，使存款的几位嗯对他们surface.ions的作为或P是杂质刻意添加到单结晶硅的结构，以供应电子传递的&负面&目前，在硅晶体，即所谓N型silicon.b ，可以增加一条，作为杂质产生的p型硅供应孔转递&积极& current.whether一个P -类型的一个n型硅衬底，是需要靠哪些类型的晶体管预计将在制造上它： NPN型的PNP型

The rate of equiaxed crystals is increased with electric current.

选择合适的电磁搅拌参数可以获得良好的铸坯质量。

Numerical expressions are derived to calculate the unsteady movement of equiaxial crystals in unsteady and nonuniform liquid profile.

铸件凝固过程数值模拟研究经过几十年的发展已取得了很大进展，并逐步在生产实际中获得应用。

And a local stacking equation is also established so as to describe the migrating and stacking process of the free equiaxial crystals in convective metal.

特别是近年来，人们在模拟计算凝固过程中的液相流场、溶质分布及宏观偏析等问题方面也取得了成功。

The integrated mathematic model of solidification is then established, which includes heat transfer, solute transfer, liquid flow and the movement of equiaxial crystals in solidification process.

本文通过两相流理论建立了等轴晶在对流金属液中移动的非稳态数学模型，推导了求解等轴晶在非稳态、非均匀液相流场中非稳态移动的数值表达式，并进一步推导了描述等轴晶在凝固过程中迁移、堆积规律的局部堆积方程式。

And Pharaoh spoke to Joseph, saying, Your father and your brothers have come to you.

47：5 法老对约瑟说，你父亲和你弟兄们到你这里来了。

Additionally, the approximate flattening of surface strip using lines linking midpoints on perpendicular lines between geodesic curves and the unconditional extreme value method are discussed.

提出了用测地线方程、曲面上两点间短程线来计算膜结构曲面测地线的方法，同时，采用测地线间垂线的中点连线和用无约束极值法进行空间条状曲面近似展开的分析。