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columnar structure相关的网络例句

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与 columnar structure 相关的网络例句 [注:此内容来源于网络,仅供参考]

Columnar structure, which is observed in the films deposited by conventional magnetron sputtering, disappears in the film synthesized at ICP power of 200 W and substrate temperature of 300℃.

利用感应耦合等离子体增强射频磁控溅射技术在Si(111)片和M2钢表面制备了ZrN薄膜,研究了基片的温度和ICP功率对ZrN薄膜的结构以及性能影响。

Results show that MoS2-Ti composite coatings grow in islands pattern, their cross-section appear to be dense columnar structure.

结果表明:不同Ti含量的MoS2-Ti复合薄膜呈岛状生长模式,断面呈致密细柱状,结晶状态均为无定形态;薄膜的显微硬度随Ti含量增加而升高;MoS2-Ti复合薄膜在大气中的摩擦磨损性能优于MoS2薄膜,掺杂适当Ti可以使MoS2-Ti复合薄膜的摩擦曲线波动减小,耐磨寿命提高,在本试验研究范围内,含30%Ti复合薄膜的耐磨寿命最长,当Ti掺杂量达到50%时MoS2-Ti复合薄膜失去润滑性能。

These calculationsshow a good space-filling of the available volume aswell as the enhancement of the microsegregation over theentire simulation experiment time, contributing to thecohesion of the columnar structure.

这些计算展现出良好的空间可用的量的油以及对微观的提高整个模拟实验的时间,作出贡献凝聚力的柱状结构。

The results show that the cross section of ZnS thin film prepared at room temperature by GLAD technique is oblique columnar structure, and these ZnS thin films grow in low crystallization degree.

研究发现,室温下倾斜沉积ZnS薄膜断面为倾斜柱状结构,且薄膜的结晶程度不高。

A self-made vacuum melting and argon shield continuous unidirectional solidification equipment was used to produce copper tube with continuous columnar structure.

采用自行研制的真空熔炼、氩气保护连续定向凝固设备制备出具有连续柱状晶组织的铜管铸坯,分析了铜管铸坯生产中熔体温度、连铸速度、冷却水量,结晶器等对其的影响。

For thin polycrystalline films, especially those with columnar structure, once the diameter of grains on the film surface is larger than the film thickness, the total area of above and under basal planes (film-substrate interface) will be larger than that of side plane.

对于薄膜特别是柱状晶薄膜,当晶粒在膜平面内的尺寸大于膜厚时,柱状晶粒的上底面和下底面的面积将大于侧面的面积,因此薄膜中的晶粒生长除像整体材料中的晶粒生长一样考虑晶界能外,还需要考虑表面能和界面能,因为各向异性的表面能和界面能将导致薄膜中的异常晶粒生长和织构变化。

The results show that the cubic texture with columnar structure is obtained in the Fe-(3.2%Si) electrical steels through temper rolling and final annealing of primary recystallized sheets.

结果表明,对含碳量较低的Fe-3.2%Si铁硅合金的初次再结晶组织施加小形变量形变和退火后,可以得到具有柱状晶结构的晶粒组织,并且得到比较集中的立方织构。

However , Each ferromagnetic layer (VEH=100V、120V and 150V) exhibits a columnar structure perpendicular to the film surface and the film thickness of ferromagnetic and antiferromagnetic was about 20nm and 30 nm , respectively .

然而,在VEH=100V、120V and 150V条件下的Ni80Fe20/NixFe1-xO双层薄膜的铁磁层中,一种垂直於薄膜表面的柱状结构被观察到,且铁磁层和反铁磁层的厚度分别约为20 nm和30 nm。

For thin polycrystalline films, especially those with columnar structure, once the diameter of grains on the film surface is larger than the film thickness, the total area of above and under basal planes (film-substrate interface) will be larger than that of side plane. Therefore besides the minimization of boundary energy in traditional bulk material, surface energy, interface energy would be considered due to the anisotropy of surface energy, interface energy being able to drive the grain growth and texture evolution in thin films.

对于薄膜特别是柱状晶薄膜,当晶粒在膜平面内的尺寸大于膜厚时,柱状晶粒的上底面和下底面的面积将大于侧面的面积,因此薄膜中的晶粒生长除像整体材料中的晶粒生长一样考虑晶界能外,还需要考虑表面能和界面能,因为各向异性的表面能和界面能将导致薄膜中的异常晶粒生长和织构变化。

Furthermore, the thickness of the CsI can be greater than that of a rare earth screen because when CsI is deposited on the array it grows in a columnar structure.

此外,因为碘化铯附着在阵列上形成柱形结构,碘化铯比非植入屏要厚很多。

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