查询词典 collector current

The experimental results show that the validity of current collector is greater than 97% and the measurement error of the leakage current is less than 1%.

试验结果表明：采集环的采集效果大于97%；泄漏电流的测量误差小于1%。

At low frequencies, the current in the collector of a transistor is in phase with the applied current at the base.

在低频段，晶体管的集电极电流与施加在基级的电流同相。

The current for pantograph shall be increased especially for the metro vehicle equipped with the third rail current collector.

需要增加受电弓受流，特别是对采用第三轨受流器的地铁列车。

With this mode of working the base-emitter circuit is the input side;and the emitter through base to collector circuit the output side.although these have a common path through base and emitter, the two circuit are effectively separated by the fast that as far as polarity of the base circuit is concerned,the base and upper half of the transistor are connected as a reverse biased diode.hence there is no current flow from the base circuit into the collector circuit.

这一工作模式下，基极-发射极电路是输入端，发射极通过基极，再到集电极电路的输出端。虽然它们都有一个共同的路径通过基极和发射极，这两个电路是通过和基极电路相关的尽可能的有效快速分离开的，基极和基极以上的一半以上的晶体管作为一个反偏二极管与之相连接。

Current flow between the emitter and base controls the current flow between the emitter and collector.the emitter of the transistor is the most heavily doped so it has the most excess electrons or holes.

由发射极到基极间的电流控制发射极到集电极间的电流，晶体管的发射极是重掺硅型的，所以它有过量的电子或空穴。练习翻译？遇到难题？快来翻吧

Current peaks for different spins in the Ⅰ-Ⅴ curve split. The confined"light"hole energy levels of the QW turn out to be an effective tunnelling channel for both"heavy"and"light" holes. Although considerable tunnelling current originate from the"heavy"hole state in the emitter region, the current in the collector is mainly carried by the"light"hole state.

无论对重空穴还是轻空穴来说，量子阱中轻空穴的束缚能级都是有效的隧穿通道，虽然隧穿电流有相当大比例由发射极重空穴态提供，但在集电极端大部分电流又由轻空穴态传导。

The results show that, there is no obvious variation of the influence of different collector bar installations on the cathode potential drop, but the current distribution will be relatively evener when the cathode collector bar is horizontally installed.

结果表明，不同的阴极导杆安装方法对导流槽阴极的总电位降大小没有明显影响，但是水平阴极导杆安装更有利于阴极表面电流密度的均匀分布。

It is controlled by singlechip together with voltage sensor, current sensor, temperature sensor and data-processing software to collect voltage, current, temperature, state of switch. At the same time, it performs control operation such as close switch, open switch, reset. In order to cut down checking period,a tributary station structure with double singlechips is designed. It is connected between computer and intelligent collector.

为了缩短地面计算机依次巡测所有智能采集器的时间，设计了双单片机结构的变电所分站，变电所分站在计算机和智能采集器之间，用一片双口RAM进行数据暂存和缓冲，可以实现双向通信，在整个系统结构中起着承上启下的作用，从而提高系统的整体性能，此外，分站还能脱离主机独立工作。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

In organic double layer capacitor, it is easy to form a layer of nonconductive oxide material which make the resistance increased between current collector and activated materials when aluminum foil is used as current collector.

在有机电解液双电层电容器中，用铝箔作为集流体时，在铝箔的表面容易生成一层难导电的氧化膜，使得集流体和活性物质之间的接触电阻大大地增加，降低了电容器的整体性能。

By using competitive adsorption of activated carbom to remove unfavorable influence of carbon in carbonaceous gold concentrate on leaching process, the leaching rate of gold concentrate can be improved to 88% as compared with 10%by direct cyanidation.

本文论述了利用活性炭竞争吸附作用，消除含炭金精矿中炭在浸出过程中的影响，使金精矿的浸出率可由直接氰化的10％提高到88％。

The only thing you're ever gonna be king of is King of the Stupids!

你只配做傻瓜的国王！