查询词典 collector current

We also know that the ratio between collector current and emitter current is called α.

我们还知道集电极电流与发射极电流之间的系数是α。

It takes only a small change of base current to control a relatively large collector current.

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IC2 is N1P2N2 transistor base current, it makes its collector current IC1 and emitter current IA increased.

IC2是N1P2N2晶体管的基极电流，它又使得其集电极电流IC1和发射极电流IA增加。

Therefore, if we have a way of holding emitter current constant through a transistor, the transistor will work to regulate collector current at a constant value.

于是，只要我们能让晶体管的发射极电流保持恒定，它就能保持发射极电流为恒定值。

We know that in a transistor operating in its active mode, collector current is equal to base current multiplied by the ratio β.

我们知道，当晶体管工作在放大区时，集电极电流等于基极电流乘以系数β。

We've seen already how maintaining a constant base current through an active transistor results in the regulation of collector current, according to the β ratio.

我们已经看到有源晶体管的恒定的基极电流是如何以系数β控制集电极电流的。

Because collector current is equal to base current multiplied by β, and emitter current is the sum of the base and collector currents,α should be mathematically derivable from β.

既然集电极电流等于基极电流乘以β，而发射极电流又是基极和集电极电流之和，α当然可以根据β计算出来。

Well, the α ratio works similarly: if emitter current is held constant, collector current will remain at a stable, regulated value so long as the transistor has enough collector-to-emitter voltage drop to maintain it in its active mode.

系数α的作用与之类似：如果发射极电流保持恒定，只要集电极－发射极电压足以使其保持在放大区，集电极电流也将稳定保持。

Issues added: GTO below the opening of the process and shutdown process: Located GTO anode forward voltage electric pressure, when the increase in positive gate trigger current IG, through N1P2N2 transistors amplification makes its collector current IC2 and emitter current IK increase.

问题补充：下面分析GTO的开通过程和关断过程：设GTO阳极电压力正向电压，当在门极加正向触发电流IG后，通过N1P2N2晶体管的放大作用使得其集电极电流IC2和发射极电流IK增加。

Since Al〓Ga〓In〓P possesses larger valence band difference to GaAs and wider energy gap, minor carrier reverse injection from base and space charge region recombination in the emitter are effectively suppressed in Al〓Ga〓 In〓P/GaAs HBT. Under most circumstances, quasi-neutral base recombination current dominates the base current, and its ratio to collector current varies little with collector current and temperature, thus greatly stabilizes the current gain.

Al〓Ga〓〓In〓P/GaAs HBT由于异质结的△Ev较大，发射区禁带较宽，有力地抑制了基区少子反向注入流和发射区空间电荷区复合电流；在大多数情况下，基极电流以准中性基区复合电流为主，其与集电极电流的比值随集电极电流和温度的变化极小，稳定了电流增益。

By the time of its fall, most of the prisoners were writers who had written against the corruptions of the government.

到它被攻陷的时候，里面多数的犯人是写了反对政府贪污文章的作家。

The most obvious variation to ovum morphological character was that the color was changed from light green to sepiaceous in embryonic development, and all the ovums were almost hatched after 96h.

在胚胎发育过程中卵的形态特征最明显的变化是颜色从淡绿到深褐色，卵在发育96h后卵基本全部孵化。