查询词典 co-ordinated

The speed of the coordinating reaction between pyridine and Co is higher than that between pyridine and Fe.

吡啶与Co结合的速率比Fe结合的速率快。

We herein report on a febrile patient with Burkholderia pseudomallei septicemia presenting primarily as prostatic abscesses. Initial urinalysis was normal but post-prostatic massage urinalysis revealed profound pyuria. All cultures from blood, post-massage urine and urethral pus grew Burkholderia pseudomallei. The patient was treated successfully with ceftazidime and co-trimoxazole combined with surgical drainage by transurethral resection of the prostate.

我们报告一位发烧的病人，感染源为类鼻疽摄护腺脓疡，最初尿液检查为正常，但摄护腺按摩后的尿液却是脓尿，所有从血液、尿液和尿道口脓的培养报告都是类鼻疽菌，经ceftazidime和co-trimoxazole抗生素治疗加上外科引流后治疗成功。

The method of analysis of variance was used to analyse germination characteristic of plant cane and ratoon cane in 163 sugarcane varieties of 10 series from PR, CP, H, Q, CO, M,B, Taiwan, Japan, and Philippine.

采用方差分析和相关分析的方法对PR、CP、H、Q、CO、M、B、台湾、日本和菲律宾10个系列163个甘蔗品种的新植和宿根萌芽特性进行分析。

The present Cu-20Ni-25Co alloy forms a continuous of Co2O3 layers over the surface of alloy because Cu-20Ni-25Co alloy formed by adding Ni to Cu-Co alloy decrease the critical concentration of forming reactive component oxides.

这主要归因于向Cu-Co合金加入了第三组元Ni，降低了合金表面活泼组元形成氧化物所需的临界浓度，促使合金表面由混合氧化物膜向单一活泼组元氧化物膜的转化。

Domain structures of the reactively evaporated Co- CoO films have been observed by Lorentz microscopy.

应用Lorentz显微术观察了反应蒸镀的Co－CoO膜的磁畴结构。

H〓-TPR and CO-TPR show that the reducibility of the various Pd catalysts is different.

H〓-TPR和CO-TPR结果表明各种载体负载的Pd催化剂还原性能不同。

The calculated results show that the relative stable Si-terminated surface has the lower surface energy than the Co-terminated surface.

结果表明表面能较低的Si终止表面比Co终止表面稳定。

It was anticipated that more than 50% of ash and the hazardous elements As, Co, Cr, Cu, Hg, Mn and more than 30% of sulfur in most coal would be routinely removed by physical coal cleaning procedures, however, the removability of other hazardous elements Ba, Be, Cd, Cl, Mo, Ni, P, Pb, Sb, Se, Th, U, V and Zn displayed relatively lower or a wide range of variation.

结果表明：物理洗选不但能降低煤中的灰分与硫分，还能不同程度地脱除煤中有害微量元素；预测在物理洗选过程中，多数煤中灰分以及有害微量元素As、Co、Cu、Cr、Hg与Mn的脱除率大于50％，硫分的脱除率大于30％，其它有害微量元素Ba、Be、Cd、Cl、Mo、Ni、P、Pb、Sb、Se、Th、U、V与Zn的脱除率相对较低或表现出一个宽的变化范围。

Still, if you need more evidence of the hit-snatching, bullshit headline world we live in check out sport.co.uk's risible 'Ljungberg blasts Wenger' on the NewsNow feed.

如果你仍旧需要更多的证据证明这些鬼扯的头条，去看看sport.co.uk的可笑的"永贝里炮轰温格"。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。