查询词典 cine film

The structure of the thin film capacitor 1 of this invention is: form sequentially at least the bottom electrode layer 102, the high dielectrics constant oxide film 103 and the upper electrode layer 105 on the semiconductor substrate 101; said upper electrode layer 105 which is a film layer 104 formed by the electrical conductive material which is processable by reactive ion etching, or a multilayered film composed of two kinds of film layers 107 and 108, which are each formed of a conductive material which is processable by at least two kinds of reactive ion etching.

要约 薄膜电容器1是至少在半导体基片101上按顺序形成下部电极层102、高介电常数氧化物膜层103、上部电极层105而构成的薄膜电容器，该上部电极层105由一种仅由可用反应性离子刻蚀加工的导电性材料形成的膜层104，或至少两种由可用反应性离子刻蚀加工的导电性材料分别形成层状的多层膜层107和108构成；经历350℃的热试验之后，对该薄膜电容器1施加OV到2V的驱动电压的薄膜电容器漏电电流密度为1×10 －8 A/cm 2 以下。

A fundamental problem in the introduction of such digital archiving technology is the lack of widespread ability to review studies electronically (most facilities are equipped only with cine film projectors). In 1995, a joint ACC/NEMA committee established the DICOM 3.0 standard for the transport of digitally archived angiographic studies.

这种数字档案技术主要问题是没有病理资料电子化回放功能(大多数设备配有电影放映机)。1995年，为了传播数字血管造影档案资料的方便，ACC和NEMA共同委员会建立了用于传输的图像资料的有关规则。

As an artist she has participated in film festivals, workshops and cine/theater productions.

作为艺术家，她还参与了许多电影节、工作室和电影和戏剧创作。

This 20 minutes, Super 8, 18 fps film, was made in 1969 and it was the 1st award winner at the 1970 Greek Amateur Cine Club Festival.

这20分钟，速8， 18 fps的影片，是在1969年，它是第一获奖者在1970年希腊俱乐部业余电影节。

In 1960,two other researchers compared quantity and quality of work of operators of cine-film perforating machines.

1960年，另外两个研究人员比较了电影胶片穿孔机操作人员的工作质量和数量。

In Moscow, Cine Fantom runs festivals, as well as regularly scheduled showings and seminars focusing on both Russian and international independent film work.

在莫斯科，幽灵电影工作室组织各种电影节，并定期放映和研究俄罗斯及国际上的一些优秀的独立电影作品。

M^(-2). The polarization curves show that the corrosion current density of sol sealed film is about 2 orders of magnitude lower than that of the film sealed by sodium bichromate, the reason is that sol particles can not only seal pores of anodized film, but also form sot-gel coating on anodized film.

m^(-2)。极化曲线显示溶胶封闭膜的腐蚀电流密度比重铬酸盐封闭膜的降低2个数量级，其原因是溶胶不仅封闭了氧化膜的孔隙，而且在氧化膜的表面形成溶胶凝胶涂层。

The polarization curves show that the corrosion current density of sol sealed film is about 2 orders of magnitude lower than that of the film sealed by sodium bichromate, the reason is that sol particles can not only seal pores of anodized film, but also form sol-gel coating on anodized film.

极化曲线显示溶胶封闭膜的腐蚀电流密度比重铬酸盐封闭膜的降低2个数量级，其原因是溶胶不仅封闭了氧化膜的孔隙，而且在氧化膜的表面形成溶胶凝胶涂层。

Transmission Electron Microscope and other properties testing results show that the complex emulsifier system is the crucial influence factor of the polymerization process and the properties of products. It may influence the coagulum content and reaction rate of the polymerization process, the performance, particle diameter,viscosity, electrolyte stability and storage stability of the emulsion products and the contact angle of the film.The initiator mainly influences the coagulum content and reaction rate.The acrylic monomers mainly influence the solid content, Minimum Film Formation Temperature of the emulsion and the Glass Transition Temperature of the film.The organic silicone monomer mainly influences the water absorption of the film.The reaction temperature mainly influences the reaction rate and conversion.The stirring intensity mainly influences the coagulum content of the polymerization process.

透射电镜等性能测试结果显示：复合乳化剂体系是硅丙共聚乳液的聚合过程及产品性能的主要影响因素，它可以对聚合过程的凝胶率、反应速率以及乳液的外观、粒径、粘度、耐电解质稳定性及贮存稳定性，还有乳液涂膜的接触角等造成不同程度的影响；引发剂主要影响反应速率和凝胶率；丙烯酸酯单体主要影响到乳液的固含量、最低成膜温度以及涂膜的玻璃化转变温度，有机硅单体主要影响涂膜的吸水率等；聚合反应温度主要影响乳液的反应速率和转化率等；搅拌强度主要是影响到聚合过程的凝胶率。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

Liapunov—Schmidt method is one of the most important method in the bifurcation theory.

Liapunov—Schmidt方法是分叉理论的最重要方法之一。

Be courteous -- even when people are most discourteous to you .

要有礼貌──即使当別人对你最不礼貌的时候。