查询词典 breakdown voltage

In this thesis, the author proposes a model of the charge sharing factor at the corner of drift region in LDMOS based on conformal transformation, and the model is used to compute breakdown voltage in RESURF structure.

本文建立了RESURF技术和多阶梯场极板共同作用的LDMOS漂移区表面电势和电场模型，并在准二维的表面电场解析模型的基础上，对多阶梯场极板的长度设计进行优化。

As a result, a breakdown voltage of an oxide film, which occurs in the gate oxide film, can be prevented.

结果，可以防止发生在栅极氧化膜中的氧化膜的击穿电压。

Using the normal planar technology of bipolar junction transistor,we have fabricated the p n p high frequency,high breakdown voltage transistors which can operate in the wider temperature range from -55℃ to 180℃.

一、引言新器件的设计基于以下三方面的考虑：（1）众所周知，常规双极结型晶体管的hFE随温度上升而增大，具有正的温度系数，特别在较高温度更为严重。

In recent years, SiC FET power transistor and GaN high electron movability power transistor represent the third generation semiconductor-wide bandgap semiconductor power devices, have advantages of high breakdown voltage, high power density, as well as high output power, high operation efficiency, high operation frequency, wide instant aneous bandwidth, operation in high temperature environment and strong ability of resisting radiation.

近年来以SiC场效应功率晶体管和GaN高电子迁移率功率晶体管为代表的第三代半导体－宽禁带半导体功率器件具有击穿电压高、功率密度高、输出功率高、工作效率高、工作频率高、瞬时带宽宽、适合在高温环境下工作和抗辐射能力强等优点。

When the diode is reverse biased, only a negligibly small leakage current flows through the device until the reverse breakdown voltage is reached.

当二极管反向偏置时，仅有很小的，可忽略的漏电流流过，除非是达到反向击穿电压。

In this way,the vertical breakdown voltage of SOI LDMOS with 2μm thickness SOI layer can be improved by 43%.The on-state resistance is lowered by 24% because of the higher impurity concentration of the SOI surface.

采用这种方法制得的SOILDMOS的纵向击穿电压提高了43%，导通电阻降低了24%，这是因为它的表面浓度更高。

The simulation results prove that the new structure can reduce the turn-off time by more than 75%compared with the normal one under the same breakdown voltage and on-state performance.

理论分析和模拟结果证明，该结构在击穿电压、导通损耗不变的情况下，能将关断时间减少75％以上。应用这样的结构只需增加两个分压比一定的分压电阻。

The operating principle and hardware configuration of the instrument based on AT89C51 for testing breakdown voltage of the dielectric oil is introduced. The method to collect the breakout current through photoelectric isolation is proved when the dielectric oil was broken out. The question about the system work stability in the condition of strive electromagnetism interfere is proposed.

介绍了 AT89C5 1单片机控制的绝缘油耐压测试仪的工作原理及硬件结构，探讨了在绝缘油击穿时，通过光电隔离采集击穿电流的方法，解决了在高压击穿瞬间和强电磁场干扰环境下，微机电路实行有效复位并使系统稳定工作的问题，给出了基于 MAX70 6为核心的高可靠复位电路的实现方法。

A novel structure for designing and fabricating a power static induction transistor with excellent high breakdown voltage performance is presented.

采用一种新型结构设计、制造了高压特性优良的电力静电感应晶体管。

The clamping snubber circuit was set to the rated breakdown voltage of the MOSFET (600 V and 800 V respectively).

钳位缓冲电路被设定在场效应晶体管的额定击穿电压上（分别为600伏特和800伏特）。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。