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This paper puts forward an improved Curtice model, by modify drain-source current I ds and breakout volage V p of GaAs MESFET tube on the basis of Curtice semiexpirical model, and uses fast simulated annealing algorithm to resolve it.

从模型的建立方法来看，现有GaAsMESFET非线性模型大致分为 3种类型：(1)最值模型[1] 这种模型从求解GaAsMESFET的二维或三维电磁场方程出发，用数值计算算出MESFET的非线性特性。

The phase change of TiO_2 xerogel during annealing was studied by X-ray diffiaction and thermogravimetry-differential scanning calorimetry.

应用X射线衍射和热重-差式扫描量热研究了TiO_2凝胶在热处理过程中的物相变化。

The CPP bioceramic was made by the following steps: annealing, ball milling, admixing, and calcinating.

对壳聚糖膜包裹的多孔CPP生物陶瓷的理化性质、毒性、生物力学进行检测。

The microstructure and the microhardness of aluminizing layer were found changed obviously after annealing.

经扩散退火后，渗层组织和显微硬度都发生了明显的变化。

The effective channel mobility of4H-SiC MOSFETs is increased significantly by high temperature anneals in nitric oxide.4H-SiC MOSFET with hydrogen postoxidation annealing has a lower threshold voltage of3.1V and a wide gate voltage operation range in which the inversion channel mobility is more than100cm 2 /Vs.

SiC的雪崩击穿电场是Si的十倍，因此，理论上SiC单极功率器件的导通电阻可以比Si器件的低400倍，但在6H-SiCMOS结构中，由于反型层的电子迁移率较小，沟道迁移率测量值仅为40～50cm2/Vs，远远低于6H-SiC的体迁移率400cm2/Vs眼1熏2演，限制了SiC功率MOSFET的导通电阻Ron。

We mainly discussed the bonging configurations and element of the SiOx/a-C:F/SiOx multiple-layered films, and the difference from one-layered films before and after annealing.

本文重点分析了SiO_x／a-C：F／SiO_x多层膜的结构与成分，并与单层的a-C：F薄膜比较了退火前后结构与介电性质的不同。

It indicated that the multiple-layered films were mainly composed by C-F, C=C and Si-O bonging, a little Si-C and Si-F bonding were also existed because of history effect. The bondgap were calculated as 2.7eV. The dielectric constant of the multiple-layered films was close relative to the thickness of the covering layer-SiOx, so the thickness had better be reduce. The bonding configurations of multiple-layered films had no evident changes after 400癈 annealing, the thickness raise very little and the dielectric constant increase 8%. Compared with one-layered a-C:F films prepared in the same conditions, the SiOx/a-C:F/SiOx multiple-layered films had a better thermal stability.

结果表明，多层膜主要由C-F，C=C，Si-O键构成，由于器壁的历史效应，薄膜中还存在少量Si-C和Si-F键；多层膜的光学带隙经计算约为2.7eV；多层膜的介电常数与包层SiO_x厚度有很大关系，应尽可能减小SiO_x厚度；在经历200-400℃的N_2氛围中退火后，多层膜的红外结构没有发生太大的变化：膜厚度稍微增大，介电常数只增加了8％，与同样制备条件下沉积的单层a-C：F薄膜相比具有较好的热稳定性。

After summarizing BSS algorithm of convolved mixture and its applications, the paper applies the improved PSO algorithm to convolved mixture BSS and proposes the PSO algorithm based on simulated annealing method. The paper also does some experiments of BSS based on PSO algorithm with grads acceleration and analyzes the simulation results.

4在总结卷积混合的盲源分离算法及其应用之后，将改进型粒子群算法应用到卷积混合的盲源分离中，给出了基于模拟退火思想的粒子群算法和基于带有梯度加速的粒子群算法的盲源分离的仿真实验，并对仿真结果作了分析。

Mainly for spare parts heat treatments and so on metal parts quenching, cyaniding, annealing and tempering uses, especially is suitable for the fastener, the standard letter heat treatment.

主要供备件金属零件淬火、氰化、退火和回火等热处理用，尤其适用于紧固件、标准件热处理。

Mainly uses in the laboratory for each heat treatments and so on metal parts quenching, cyaniding, annealing and tempering uses, especially is suitable for the fastener, the standard letter heat treatment.

主要用于实验室供各种金属零件淬火、氰化、退火和回火等热处理用，尤其适用于紧固件、标准件热处理。

Breath, muscle contraction of the buttocks; arch body, as far as possible to hold his head, right leg straight towards the ceiling (peg-leg knee in order to avoid muscle tension).

呼气，收缩臀部肌肉；拱起身体，尽量抬起头来，右腿伸直朝向天花板（膝微屈，以避免肌肉紧张）。

The cost of moving grain food products was unchanged from May, but year over year are up 8%.

粮食产品的运输费用与5月份相比没有变化，但却比去年同期高8％。