查询词典 annealing

In addition, the SPE regrowth of SiGeC films was carried out by two-step annealing method.

实验发现750～800℃是SiGeC薄膜进行SPE生长的最佳温度。

In the Ti film and the TiZr alloy film annealed at 800 ℃, there are a lot of regular hexahedron or octahedron bubbles, which are the same as the projections of equilibrium shape of their matrix crystal. With annealing temperature of 720 ℃, the bubbles in TiZr alloy annealed for 40 min are more round than those annealed for 130 min.

在800 ℃热处理后的Ti和TiZr合金中均观察到规则的六边形和八边形氦泡，对应基体材料单晶平衡外形多面体的投影。720 ℃热处理40 min后，TiZr合金膜中的氦泡比同样温度热处理130 min后的接近球形。

It was found that after high vacuum annealing , the density, maximum energy product and remanence of magnets become lower.

为研究回火过程中真空度对烧结NdFeB磁体显微结构及磁性能的影响，对烧结态磁体采用不同的真空度进行回火。

During annealing the ribbons with 5% at Pd, Zr2Ni crystallizes first, and then the residual amorphous matrix transforms into Zr2Pd.

当Pd的加入量为5at%时，初生相仍为Zr2Ni，随后部分残留非晶转变为Zr2Pd；当Pd的加入量达到10at%时，初生相为Zr2Ni和少量Zr2Pd并存；当Pd的加入量达到20at%时，初生相为明显的Zr2Pd。

The effect of thermal contact resistance between aluminum coil for aluminum annealing was investigated by simulation experiment of heat conduction.

摘 要：采用热传导模拟实验研究铝卷层与层之间接触热阻对铝材退火的影响。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

Further annealing at 600K, bond scission in the Si-H moiety results in the desorption of hydrogen and finally leads to the formation of the copper silicide.

我们的理论分析表明，硅原子替代了表面第一层的部分铜原子，这些硅原子和剩下的铜原子组成一层新的复合层，形成R30°结构。

In the laser writing process, the desired microfluidic patterns are designed using commercial computer software and are then transferred to the laser scriber to ablate the trenches. The results show that a very smooth channel wall can be achieved through the annealing process at the temperature 650℃and 5 hour.

此微流体芯片是利用便利的软件包绘制而成后，再传输至飞秒激光系统以直接读写烧蚀的方式在玻璃基材上进行微管道的烧蚀，并利用650℃并持温5 小时的退火处理来改善微管道的壁面质量。

The predictions are identical with that of foreign underwater acousticexperiments.The third,the scattering theory are applied in prediction of seareverberation and inversion of sea bottom parameter.Shallow-sea monstaticreverberation is predicted by combining shallow-sea normal mode theory withscattering theory.Then with simulated annealing of neural network and scatteringtheory accurate inversion of sea-bottom parameter and surface roughness are given.

第三，把散射理论应用于海洋混响的预报和海底介质参数的反演，首先通过浅海简正波理论和散射理论相结合，对浅海单程混响进行了预报；然后利用神经网络理论中的模拟退火法和散射场理论相结合，准确地反演了海底介质参数和表面粗糙度。

The composition of the SiGe thin films were controlled by changing the ratio of the area of silicon and germanium. By changing the parameters of substrate temperature and annealing temperature, we examined the microstructure, composition, crystallinity, electrical and thermoelectric properties by field emission scanning electron microscope, X-ray photoelectric spectroscopy, secondary ion mass spectrometer, X-ray diffraction, Hall effect and Seebeck coefficient measurement.

利用改变矽锗靶材面积比例进行薄膜成份的控制，并藉由改变基板温度以及退火温度之制程参数，利用场发射扫描式电子显微镜、化学分析电子能谱仪、二次离子质谱仪、X光绕射仪、霍尔效应量测仪以及自组装之热电量测系统作为分析仪器，分别量测薄膜表面形貌、横截面、成分、结晶性质、电性以及Seebeck系数等特性。

On the other hand, the more important thing is because the urban housing is a kind of heterogeneity products.

另一方面，更重要的是由于城市住房是一种异质性产品。

Climate histogram is the fall that collects place measure calm value, cent serves as cross axle for a few equal interval, the area that the frequency that the value appears according to place is accumulated and becomes will be determined inside each interval, discharge the graph that rise with post, also be called histogram.

气候直方图是将所收集的降水量测定值，分为几个相等的区间作为横轴，并将各区间内所测定值依所出现的次数累积而成的面积，用柱子排起来的图形，也叫做柱状图。