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annealed相关的网络例句

查询词典 annealed

与 annealed 相关的网络例句 [注:此内容来源于网络,仅供参考]

The electronic properties of annealed slices and coterminous non-annealed slices were evaluated by Hall measurement.

利用霍尔测试设备测量了晶体退火前后的电学性能。生长态的Hg_(1-x)Mn_xTe晶体大部分为P型半导体。

The weak signal characteristics of the capacitors of PYZT ferroelectric thin films are investigated. It is found that when the PYZT thin film deposited on Pt/RuO2 is rapidly thermal-annealed at 800℃, an almost ideal microstructure of extended PYZT can be acquired, of which, the εr decreases with the increasing of the rapid temperature (εr is about 150 when annealed at 800 ℃).6 refs.

研究发现,沉积在Pt/RuO2底电极上的PYZT薄膜经800℃快速热处理具有较接近理想外延PYZT薄膜结构,而且εr随着快速热处理温度升高而减小,在800℃快速热处理条件下其εr约为150。

It is found that there is an apparent structural difference between the sticking miler face area and the free face area of the ribbon annealed at 310℃, and a structural conformity of the ribbon annealed at 540℃.

通过对310℃退火样品的观测,可以发现薄带的贴辊面区和自由面区存在着非常明显的结构差异;而540℃退火样品的AFM观测结果则显示这种差异并不明显。

The optimal annealing temperature was between 700 and 900℃and there was no difference whether the films were annealed in vacuum or in nitrogen atmosphere. Films annealed in air caused great Li loss and displayed opaqueness.

LiNbO_3薄膜最佳的退火温度为700℃-900℃,在高真空和氮气保护环境下退火效果相同(来源:A7e2eBC论文网www.abclunwen.com),空气中退火薄膜锂元素的损失尤为严重,而且薄膜表面失去透明。

In the Ti film and the TiZr alloy film annealed at 800 ℃, there are a lot of regular hexahedron or octahedron bubbles, which are the same as the projections of equilibrium shape of their matrix crystal. With annealing temperature of 720 ℃, the bubbles in TiZr alloy annealed for 40 min are more round than those annealed for 130 min.

在800 ℃热处理后的Ti和TiZr合金中均观察到规则的六边形和八边形氦泡,对应基体材料单晶平衡外形多面体的投影。720 ℃热处理40 min后,TiZr合金膜中的氦泡比同样温度热处理130 min后的接近球形。

Compared with conventional rolling,yield stress and ultimate tensile stress in the annealed DSRed AZ31 magnesium alloy sheet were almost the same to the conventional rolling,while the room elongation of annealed DSRed AZ31 magnesium sheet was improved.

非对称热挤压制备的AZ31镁合金板材厚度方向上存在晶粒尺寸梯度,上表层平均晶粒尺寸最小2.50μm下表层最大(3.67μm中间层晶粒尺寸介于两者之间(3.13μm)。

The thermal stability and other high temperature properties of TC6 titanium alloy at conventionally annealed state have been studied and compared with those at duplex-annealed and isothermally annealed states.

结果表明,普通退火状态TC6钛合金在300℃/5000h以下具有良好的组织和性能稳定性,不同温度瞬时拉伸、蠕变、持久等高温性能与双重退火和等温退火状态相当。

Mn/Sb multilayer films were grown on (100) GaAs substrate by an ultrahigh vacuum evaporation system and were annealed for a sho rt time. The magnetic and magneto-optical properties were investigated for the samples unannealed and annealed, respectively.

利用超高真空电子束蒸发技术在GaAs(100)上生长Mn/S b多层膜,并经短时间热退火处理分别研究了其退火前后的磁性、磁光克尔效应及相应规律。

Two special TL phenomena have been found in Yanzhuang meteorite through the determination of the natural TL, annealed TL and induced TL by β radiation: l.when the sample of Yanzhuang meteorite is annealed at temperature up to 500℃, the TL peak induced by β rays moves to lower temperature with the increasing of irradiation dose; 2.when the annealed temperature is greater than 600℃, the TL peak temperature of the annealed sample is higher than that of the unannealed sample.

991年10月31日21点45分在广东省翁源县岩庄乡境内发生了陨石降落。从降落现场收集到3.skg的陨石样品,经初步鉴定为H6型、具有强冲击变质特性的珍稀普通球粒陨石。根据陨石命名规则定名为岩庄陨石。普通球粒陨石是目前研究太阳系早期所发生的化学与物理变化过程的最好的信息来源。

The Si-rich SiO2/p-Si structure has been fabricated with two-target alternative magnetron sputtering technique.After the Si-rich SiO2/p-Si sample having been scored by diamond tip on the front surface and annealed at 800℃ in N2 the photoluminescence spectrum is found quite different from that from the unscored one,which having been annealed in the same condition.

以磁控溅射方法于p-Si上淀积富硅二氧化硅,形成富硅二氧化硅/p-Si结构,用金刚刀在其正面刻划出方形网格后在N2气氛中退火,其光致发光谱与未刻划的经同样条件退火的对比样品的PL谱有很大不同。

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