查询词典 ammoniating

The crystalline quality and morphology of GaN nanostructures were greatly influnced by the ammoniating temperature, ammoniating time and the thickness of the Ta films.

研究了不同的氨化温度、不同的氨化时间和不同中间层厚度对GaN纳米线的影响。

The growth mechanism of these GaN nanomaterials was proposed and discussed based on the investigation of the influence of the ammoniating temperature, ammoniating time and the Nb films'thickness on the properties of GaN nanosmaterials.

通过研究不同生长条件对制备一维GaN纳米材料的影响，初步提出并探讨了采用此方法合成一维GaN纳米材料的生长机制。

The ammoniating temperature, ammoniating time and the thickness of the Nb films greatly affected the crystalline quality, morphology and photoluminescence properties of the GaN nanomaterials.

研究表明，氨化温度、氨化时间和金属催化剂Nb的厚度对一维GaN纳米材料的结晶程度和形貌具有很大的影响。

In this paper, GaN one-dimensional nanosmaterials were synthesized through magnetron sputtering and ammoniating progress on Si(111) substrates.

本文介绍了利用溅射加氨化的两步生长法在Si衬底上采用金属Nb作催化剂合成一维GaN纳米材料的方法。

Firstly, Ga2O3/Ta film is deposited on Si (111) substrates by magnetron sputtering system, and then GaN nanostructures were fabricated through ammoniating.

本文介绍了采用氨化磁控溅射Ga_2O_3/Ta薄膜的方法在硅衬底上合成了GaN纳米结构的方法。

The results indicated it was very effective to increase the content of SiC whisker by ammoniating silicasol to decrease the particle size of raw powder and increase the space for SiC whisker growth, and by controlling the reaction temperature to mate the formation of SiC be compatible with the growth of SiC whisker.

工作中系统地研究了反应物料和合成工艺对SiC晶须产率和微观形貌的影响，发现氨解能促进硅溶胶的凝胶化，并细化反应物料，因而有利于SiC晶须的生成；升温速度的控制可使SiC的生成速率与SiC晶须的生长速率得到很好的适应，此为提高SiC晶须产率的有效途径。

Single-crystalline GaN nanowires have been synthesized on Si(111) substrates by magnetron sputtering through ammoniating the Ga2O3/Nb films at 900 °C in a quartz tube.

中文摘要：采用射频磁控溅射技术在硅衬底上制备Ga2O3/Nb薄膜，然后在900 °C下于流动的氨气中进行氨化制备GaN纳米线。

GaN nanorods are successfully synthesized on Si(111) substrates with magnetron sputtering through ammoniating Ga2O3/Co films at 950℃.X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and Fourier-transform infrared spectroscopy are used to characterize the samples.

采用磁控溅射技术先在Si衬底上制备Ga2O3/Co薄膜，然后在950℃下流动的氨气中进行氨化反应制备GaN纳米棒。应用X射线衍射、扫描电镜、傅里叶红外吸收光谱、选区电子衍射和高分辨透射电子显微镜对样品进行表征。

To gain the high-guality GaN nanostructure,GaN nanowires were successfully prepared on the Si(111) substrates through ammoniating Ga2O3/ V thin films deposited by magnetron sputtering.

为了制备高质量的GaN纳米结构，采用磁控溅射技术先在硅衬底上制备Ga2O3/V薄膜，然后在流动的氨气中进行氨化反应，成功制备出GaN纳米线。

To gain the high-guality GaN nanostructure,GaN nanowire s were successfully prepared on the Si(111) substrates through ammoniating Ga2O3/V thin films deposited by magnetron sputtering.

为了制备高质量的GaN纳米结构，采用磁控溅射技术先在硅衬底上制备Ga2O3/V薄膜，然后在流动的氨气中进行氨化反应，成功制备出GaN 纳米线。

Hanna: That's over now, isn't it?

都结束了，对吗

You must be ill. You look so pale.

你一定是病了，你的脸色苍白。