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Nevertheless, as the growth temperature is higher than 675oC, rapid declination in growth efficiency. It suggests that desorption of In adatom occurs at such a growth region instead.

而当长晶温度大於675 oC时,氮化铟的成长率快速下降,我们认为在这长晶的区域内有铟原子的脱逸效应产生。

Substitutional impurities have changed the local density distribution of adatom and vacancy, which will somewhat influence nucleation and further change the growth model and the atomistic state of the film.

替位杂质改变了表面吸附原子与空位缺陷的区域分布及密度分布,这将一定程度的影响表面原子的成核,进而改变薄膜的生长模式以及薄膜的微观状态。

It was also found that the estimation of incident energy associated with energy transfer to the surface adatom could be employed in guidance of the experiments, although some approximations were introduced in the proposed model.

尽管在计算模拟中引入了一些近似,公式中也没有考虑离子、原子流比值和温度效应,但是,离子向表面增原子能量转移的近似计算结果,仍具有指导实验的预言性和适用性。

The surface modification reaction is facile and the molecules are directly attached to the neighboring adatom and rest-atom with the formation of two covalent Si-C bonds at the Si (111)-7×7 surface.

我们的研究结果表明,Si(111)-7×7表面上空间分立的硅悬键在表面加成反应中可以看作为分立的活性表面自由基。

Only in the millisecond range, the current efficiency decreases with shortening pulse period due to the disproportionation of cuprous ions and the dissolution of copper adatom.

在毫秒范围时会因为亚铜离子的不对称反应以及铜吸附原子的溶解而使得电流效率随著缩短脉冲周期而下降。

The Ehrlich-Schwoebel barriers of an adatom Cu diffusing down an island of fcc Cu are calculated by molecular dynamical simulation.The two-dimensional(2D) and three-dimensional(3D) ES barriers are calculated and compared with the results of Al.

利用分子动力学中的静态结构弛豫方法对Cu原子在面心立方铜的台阶表面扩散过程中的Ehrlich-Schwoebel势垒进行了模拟计算,研究了二维和三维ES势垒的差别,并将Cu与面心立方Al的结果进行了比较。

The energetic and structural properties of SiH_2 adsorbed on single dimer vacancy of the Si(100)-c(4×2) surface, the structures of 0.5ML hydrogenated Si(100) surface and the deposition and diffusion behaviours of silicon adatom on the H-terminated Si (100) surfaces have been studied by using empirical tight-binding total energy calculations.

本文采用经验紧束缚近似方法研究了SiH_2在Si(100)-c(4×2)表面单空位处的吸附结构、0.5ML覆盖率氢化的硅表面结构以及附加硅原子在H-terminated Si(100)表面的沉积吸附行为。

The adsorptions of SiH_2, SiH_2 with a hydrogen adatom (SiH_2+H) and SiH_2 with two hydrogen adatoms (SiH_2+2H) on the Si (100) surface near SDV structure have been calculated. Three possible sites are found in each case, and the presenting of hydrogen may reverse the relative stability of these sites.

本文首先计算分析了SiH_2、SiH_2+H和SiH_2+2H等硅烷分解后的产物在硅表面的吸附特性,我们发现每种情况都有三个可能吸附的位置,并且表面附着氢原子的出现可以造成这些吸附位置相对稳定性的逆转。

The latest progress of the dynamic phenomenon on solid surfaces is summarized,including decay phenomenon of adatom islands, step fluctuations on the surface of metals,the hopping of special clusters on the surface of semiconductors,non-linear oscillation phenomenon on the surface of metal,etc.

总结了近年来国内外固体表面动态现象研究的最新进展,其中包括金属和半导体表面原子岛的塌落现象、金属和半导体表面台阶波动、半导体表面特异集团的跳跃、金属袁面非线性振荡现象及其它一些动态现象;描述了这些动态现象特征及形成机制,并展望了动态现象的研究方向和应用前景。

If we increase the energy of incident atoms reasonably, which will enlarge adatom yields, vacancy yields and their distribution area, layer by layer growth model will be advanced .B. Influence of substitutional impurities on the stability of noble metals'(111) surface.

在一定范围内适当地提高沉积原子的能量,将有助于扩大表面吸附原子及空位缺陷的产额及分布区域,有利于提高形核密度,降低晶核尺寸,促进薄膜的层状生长。

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