查询词典 Valence

Teacher help Students to explore, discover, and summarize the using of valence shell electrons pair of repulsion theory in the shapes of simple molecules.

老师帮助学生探索、发现、总结价电子对互斥理论在简单小分子构型中的运用。

The difference of the characteristics of HHQ monolayer is dependent on the difference of radii,nuclear charges and the structures of valence shell of metal ions.

金属离子的半径、电荷及核外价电子层结构不同是影响HHQLang－muir单分子层膜性能的本质原因。

Through analysis on the structure of valence electron shell,the atom radius,the bonding orbital and other important parameters,this paper discusses the irregularity in the second circle of nonmetal elements and the irregular courses.

本文通过对第二周期元素价电子层结构、原子半径、成键轨道及其重要参数的分析，讨论了第二周期非金属元素的不规则现象，并且分析了产生这些不规则性的原因。

For all the transition metals, the binding energy first increased and then decreased as the number of d electrons increased, and the strong attractive interactions of these atoms with sheet was due to the interaction of valence electrons in the 3d shell with 2p electrons of carbon.

过渡族元素随着外层d电子数的增加，其结合能先增加再降低，过渡族元素的3d电子与碳原子的2p电子的相互作用导致了与碳管的稳定吸附。

Our research indicates that the electronegativity of elements varied with the intensive electrostatic potential of atomic nucleus Vic and the quantity of electricity of atomic valence shell qcj.

研究表明，元素电负性XSc与原子核在原子边界面上的强度电势Vic和价层电子电量qcj成线性关系。

Our research indicates that the electronegativity of elements X(subscript Sc varied with the intensive electrostatic potential of atomic nucleus V and the quantity of electricity of atomic valence shell q.

研究表明，元素电负性X与原子核在原子边界面上的强度电势V和价层电子电量q成线性关系。

The gi is defined as gi ＝( ni 0.5－0.91)4· xi 0.5/ Zi 0.5, where Zi , ni , xi are the valence, the outer electronic shell primary quantum number, and the electronegativity of atom i respectively.

gi 定义为： gi =( ni 0.5-0.91)4。 xi 0.5/ Zi 0.5，其中 Zi ， ni 和 xi 分别代表离子 i 的电荷数，最外层主量子数和电负性。

A new formula for the valence band effective states is obtained,and the effect of the conduction band effective states on the built-in electric field is considered for the first time.

重新拟合了价带有效态密度公式，并在计算内建电场时考虑了导带有效态密度的影响。

By taking the effects of Ge fraction and strain on the energy band structure and effective masses into account, the analytical model of the effective densities of states of the conduction and valence bands are proposed, and the temperature and Ge fraction dependence of the effective densities of states are also studied. Following this, the temperature and Ge fraction dependence of intrinsic carrier concentration in strained SiGe layers are analytically calculated. Furthermore, carder freezeout effect and the minority carrier trapping effect of the shallow-level compensated imputities in strained SiGe layers at low temperatures are investigated.

其中，分析了应变SiGe层的临界厚度、能带结构、禁带宽度及禁带变窄模型；在考虑了Ge组份和应力对应变SiGe层能带结构的影响后，给出了较为精确的SiGe应变层的导带和价带有效状态密度的模型，并研究了有效状态密度与Ge组份及温度的变化关系；分析了应变SiGe层的本征载流子浓度及重掺杂下的禁带变窄；讨论了低温下应变SiGe层中的载流子冻析效应，并计算了SiGe应变层的电离杂质浓度与Ge组份及温度的关系；研究了应变SiGe层低温浅能级补偿杂质的陷阱效应；给出了应变SiGe层多数和少数载流子迁移率以及少数载流子寿命模型。

We point out that the effect of action between semicore electrons and valence electrons can be neglected in self-energy correct.

指出在Si，Ge这种原子序数较小的sp系统中，半芯电子与价电子相互作用对自能修正影响可以忽略不计。

I didn't watch TV last night, because it .

昨晚我没有看电视，因为电视机坏了。

Since this year, in a lot of villages of Beijing, TV of elevator liquid crystal was removed.

今年以来，在北京的很多小区里，电梯液晶电视被撤了下来。