查询词典 V.A.
- 与 V.A. 相关的网络例句 [注:此内容来源于网络,仅供参考]
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The nutrients,such as V A,V E,V C,amino acid,phospholipids,glucose oxidase DNA and RNA,in the pollen of Rosa Xanthina and Hemerocallis minor are studied and the result is that the nutrients especially of V A,V E,V C,EAA,DNA and RNA are rich and the proportion is good.
通过对黄刺莓和金针花粉的DNA ,RNA ,磷脂,葡萄糖氧化酶,氨基酸,VA,VE 和VC 等重要营养成分的测定,发现这两种花粉的营养成分丰富,配比良好,特别是VA,VE,VC 和必需氨基酸的质量比较高,RNA和DNA的质量比也较高。
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The M- radical of V is determined and a criterion for irreducibility of an admissble module for an arbitrary vertex operator superalgebra V is given.
设V是一个顶点算子超代数,M是一个可容许的V-模。刻划了V的M-根,并给出了一个可容许V-模不可约性的差别准则
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In order to research dielectric barrier discharge characteristics at characteristics at various exciting voltage peak V(subscript P-P and dielectric thickness l(subscript d, a DBD experiment system was established. Using Q-V Lissajous figure method, the effect of exciting voltage peak V(subscript P-P and dielectric thickness l(subscript d on the main discharge parameters were studied.
为了解介质阻挡放电在不同激励电压峰值V和介质厚度l下的放电特性,通过建立介质阻挡放电试验系统,采用Q-V Lissajous图形法研究了激励电压峰值V、介质厚度l对DBD主要放电参量的影响。
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Firstly, full factorial experiment method is implemented to achieve an optimization of longitudinal microstructure design in the incidence plane of a LGP for LED BLUs. There are three control factors involving in the optimization process: the pitch and depth of both V-cut and U-cut, and angle and radius for V-cut and U-cut, respectively. Each individual control factor has three levels. It leads to a total of 27 sets of experiments.
本实验先行讨论全因子实验求取发光二极体背光模组之导光板入光侧纵沟微结构最佳化设计,选定入光侧V-cut纵沟微结构控制因子:V-cut角、V-cut间距、V-cut深及入光侧U-cut纵沟微结构控制因子:U-cut半径、U-cut间距、U-cut深等项目,其中各一因子分别有三个水准变化,依控制因子及其水准的目各进行27组实验。
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Select the v-neck, large v or deep v are a good choice.
二、选择v字领,大v或深v都是不错的选择。
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It Was found that a complex ordered carbonitride is formed on hot-rolling and continuous cooling by the precipitation of Nb and V together with C and N in which the contents of Nb and V are changeable.
利用透射扫描电镜和能谱仪对Nb-V微合金化钢中Nb和V析出相进行了研究,发现Nb和V在高温形变和连续冷却中,与C,N形成一种复杂的有序碳氮化物,其中Nb与V的含量是可变的,其浓度比值C_(Nb/C_V随着析出颗粒尺寸的减小而递减,化学式可写成C_(1-x,N_(1-y)。
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The equations of heterosis areV(subscript F1)=(l/2)Na^2+(l/4)Nd^2+Vsubscript I(F1additive dominance F1 epistasisV=(1/2)Na^2+(l/2)V1,additive parental epistasisV=(1/4)Nd^2+Vsubscript I(F1+(1/2)Vl,dominance F1 epistasis parental epistasis.where N is number of genes controlling a trait,α=P(subscript i-P/2, d is deviation from midparent, while the variance components are all indicated by their names under the repective terms.
由一个二项分布随机变数及其推广至多项分布推导出杂种优势的公式:V(下标 F1)=Na^2/2+Nd^2/4+V下标(F1加性显性 F1上位V=Na^2/2+V/2加性亲代上位V=Nd^2/4+V下标(F1+V/2显性 F1上位亲代上位在此N=控制性状的基因数,α=p(下标 i-P/2, d=离中亲的偏差,而各方差则如方程底部所列。
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MC44144 Pinout: Flyback and Synchronous Rectifier Apps Provides Complementary Auxiliary Driver with Programmable Deadtime (Turn-On Delay) between AUX and MAIN Switches Peak Current-Mode Control with 0.5-V Cycle-by-Cycle Current Limiting Hiccup Mode 0.75-V Current Limit TrueDrivet 2-A Sink, 2-A Source Outputs 110-V Input Startup Device Trimmed Internal Bandgap Reference for Accurate Line UV and Line OV Threshold Programmable Slope Compensation High-Performance 1.0-MHz Synchronizable Oscillator with Internal Timing Capacitor Precise Programmable Maximum Duty Cycle PB-Free Lead Finish Package
MC44144引脚说明:反激式同步整流和应用服务提供补充辅助与可编程死区时间之间的辅助和主开关峰值电流模式控制0.5 - V的逐周期电流限制打嗝模式0.75 - V的电流限制TrueDrivet 2 - A号水槽,2 -阿源精确的线路过压阈值线UV和可编程斜率补偿高性能1.0 - MHz的振荡器可同步输出110 V输入启动装置边内部带隙基准,内置精密程控定时电容最大占空比无铅引脚完成包
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Based on the volume relationship of aggregate, asphalt, air voids V(subscript a and voids in mineral aggregate V(subscript MA in stone mastic asphalt, the relationship between V and asphalt content is discussed and an optimum asphalt content O(subscript AC equation is deduced.
根据沥青马蹄脂碎石混合料中集料、沥青、空隙率与矿料间隙率V(下标 MA之间的体积关系,推导了V与沥青用量之间的关系;论证了V对SMA混合料级配的影响;讨论了V与级配之间的关系。
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In this paper, a simple, accurate and intuitionistic formula and method for calculating and analyzing the I-V characteristics of a pn junction is deduced. The method is used to calculate and analyze the I-V and RD-V characteristics of two typical HgCdTe loophole junctions. Some important parameters which reflect the characteristics of a diode, such as surface Ohm leakage conductance and the distribution of the ideal factor n with voltage are obtained.
本文推导了一种可简便、准确、直观计算和分析pn结I-V特性的公式和方法,并应用该方法对两类典型HgCdTe环孔pn结的I-V、RD-V特性进行了计算和拟合;得到了表面欧姆漏电导、二极管理想因子n随电压的分布等反映二极管结特性的重要参数。
- 相关中文对照歌词
- C.R.A.V.E
- V.A.L.I.S.
- V-A-C-A-T-I-O-N
- Medley For A "V" (The Party Medley)
- Kingdom Of Heaven - A New Age Dawns - Pt. V
- Izzo (H.O.V.A.)
- O.A.V.I.P.
- A.V.H.
- F.E.E.L.I.N.G. C.A.L.L.E.D. L.O.V.E
- E V A Y
- 推荐网络例句
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However, as the name(read-only memory)implies, CD disks cannot be written onorchanged in any way.
然而,正如其名字所指出的那样,CD盘不能写,也不能用任何方式改变其内容。
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Galvanizes steel pallet is mainly export which suits standard packing of European Union, the North America. galvanizes steel pallet is suitable to heavy rack. Pallet surface can design plate type, corrugated and the gap form, satisfies the different requirements.
镀锌钢托盘多用于出口,替代木托盘,免薰蒸,符合欧盟、北美各国对出口货物包装材料的法令要求;喷涂钢托盘适用于重载上货架之用,托盘表面根据需要制作成平板状、波纹状及间隔形式,满足不同的使用要求。
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A single payment file can be uploaded from an ERP system to effect all pan-China RMB payments and overseas payments in all currencies.
付款指令文件可从您的 ERP 系统上传到我们的电子银行系统来只是国内及对海外各种币种付款。