查询词典 V-grooved

34C02M8/LM8 Pinout: Short Circuit Current Output Current Transition Time Maximum Transmission Rate 1,000 RS-422 RECEIVER Common Mode Range Differential Input Differential Input Threshold-0.2 Input Voltage Hysteresis30 Input Resistance3 TTL Output Level V V2.4 Maximum Receiving Rate1,000 Short Circuit Output Current POWER REQUIREMENTS V =+12V, 10% V =+5V, 10% V =-12V, 10% ENVIRONMENTAL Operating Temperature -CS0 -MR-55 Storage Temperature-65

34C02M8/LM8引脚说明：短路电流输出电流过渡时期的最大传输速率1000的RS - 422接收器差分输入共模范围差分输入阈值0.2输入电压Hysteresis30输入Resistance3 TTL输出等级V 2.4版本的最大接收Rate1，000短路输出电流电源要求ν= 12五，10％的V =+5 V的，10％的V =- 12V的，10％，环境工作温度- CS0 -议员- 55存储温度- 65

This paper will describe,analyze and explain the phrase of "V+ge+VP"from the two parts: diatronic and syntronic.In the syntronic point,we fully describe the surface syntax structure, the deep–seated semantic relation and the exterior pragmatic functions from point to side,then we compare the difference and the homology with "V+de+VP"from multi-point.At last,we analyze and explain the pragmatic functions by focus theory and metrics principle. In the diatronic point, we explore the origin and development of this phrase,then we research its development. We summarize its developing process from Qing dynasty to modern times and predict its developing tendency as a whole on the statistics of its development.

本文从共时和历时两个角度对"V+个+VP"进行描写、分析和解释：在共时平面上对"V+个+VP"动补结构的表层句法结构、深层语义关系及外部语用功能进行从点到面的详尽描述，并从多个角度将其与"V+得+VP"结构的异同进行对比，最后综合运用焦点理论及韵律学原则分析解释其承担的语用功能；在历时平面上探究"V+个+VP"短语的来源及发展概况，对"V+个+VP"的发展情况进行考察统计，对其从清代到现代的发展情况加以总结，并从总体上概括了"V+个+VP"短语的发展趋势。

For a heterogeneous elastic solid consisting of two homogeneous layers, three homogeneous layers whose shear wave velocities increasing with depth, or three homogeneous layers whose interlayer has high velocity, if there are multi-mode dispersion curves, the phase velocity V〓 of the first mode will close up to the Rayleigh wave velocity of the bottom layer when frequency f→OHz, and V〓 of the first mode will close up to the Rayleigh wave velocity of the top layer when f→∞.

由多导波模式的相速度频散曲线还可知，对于二层固体介质、结构层的横波速度随深度而递增的三层固体介质、含硬夹层的三层固体介质而言，若频率f→OHz，其基阶模式的瑞利波相速度V〓→V〓（V〓为最底层介质的瑞利波速度）；若f→∞，其基阶模式的V〓→V〓（V〓为最上层介质的瑞利波速度）；因此，随着频率f逐渐升高，野外实测的瑞利波相速度V〓曲线应该主要为基阶导波模式。

The I-V characteristics of the diodes with 100μm diameter indicated that as the densities of V-defects on GaN films increased from 4.1×105cm-2 to 1.03×107cm-2, the Schottky barrier height decreased from 1.44eV to 1.19eV and the reverse bias leakage current at -1V is increased sharply from 10-10A to 10-7A . Further studies on a single V-defect using conductive atomic force microscope demonstrated that the value of forward current biased at 8V at V-defect side-walls appears to be one order higher than that of plain region, indicating that the conductivity mainly occurred at the side-walls of V-defect.

实验结果发现，随著V型缺陷密度由4.1×105cm-2增加至1.03×107cm-2，在氮化镓表面蒸镀镍金属所制成直径为100μm的萧基元件之所属能障从1.44eV下降至1.19eV，而且在-1V的操作下反向偏压漏电流从10-10A急遽的攀升至10-7A；为了了解V型缺陷对厘米尺寸n-GaN萧基元件电流传导机制之影响，我们进一步的利用导电原子力显微镜(Conductive Atomic Force Microscopy， C-AFM)，特别针对单一个V型缺陷进行微观电性之量测。

After statistic analyses,one slice texture analysis method was regarded better with 15 sample content per method due to data analyses of hardness(Std Dev,372.2765;C.V,17.8283 ),cohesiveness(Std Dev,0.0114;C.V,1.6505),springiness(Std Dev,0.2190;C.V,11.2598 ),gumminess(Std Dev,250.2788;C.V,17.3929 ) and chewines...

样本容量为15时，单片TPA测试的几种指标分别是硬度(Std Dev，372.2765；C.V，17.8283)、凝聚性(Std Dev，0.0114；C.V，1.6505)、弹性(Std Dev，0.2190；C.V，11.2598)、胶粘性(Std Dev，250.2788；C.V，17.3929)、咀嚼性(Std Dev，477.4376；C.V，17.1620)。这种方法可以应用到其它类似质构的食品质构分析，并结合样品特点和测试结果决定合适的样本容量。

Let G = V(G,E be a simple graph with |V| vertices and |E| edges. Let |V|= p,|E|= q, if there exists f: V →{1,2,...,p} be an injective mapping, and define an inducedfunction f":E→{1,2,...,q} by setting f"=|f-f| for all∈E. If f maps E onto {1,2,...,q}, then f is said to be a Skolem-graceful labeling of G, the graph G is said to be a Skolem-graceful graph.

对一个给定的简单图G=V(G，E，|V|和|E|分别是图G的顶点数和边数，令|V|=p，|E|=q，如果存在一个一一映射f：V→{1，2，…，p}，使得对所有边∈E，由f′=|f-f|所导出的映射函数f′：E→{1，2，…，q}是一一对应关系，则称f是图G的一个Skolem优美标号，图G被称为Skolem优美图。

He number of TCR V(Vα equal s to 100 and Bβ equals to 30 ) is less than the one of lg Vh (Vh equals to 300),for TCR V is subject to negative selection of major histocompatibility complex according to the neutral theory We discussed that is somatic mutation or DNA rea rrangement the main force in producing antibody diversity and are there pseudoge nes in TCR V or not.

CR V的数目(V α为100，Vβ为30)远少于Ig VH(数目为300)，原因是前者受到主要组织相容性复合体的制约，即受到负选择，这与中性学说观点相一致。文章还讨论了体细胞突变和DNA重排对两类抗体多样性产生上的作用，并探讨了Ig VH和TCR V的假基因问题。关键词分子进化，协同进化，免疫球蛋白，T细胞受体，中性学说

The dissipation factor tip-up D tan d , the change of capacitance D C / C 0, the maximum discharge q max and the mean discharge magnitude q mean , A compared investigation of the correlations between V min , V av and service time were compared with those between D tan d , D C / C 0, q max, q mean and respectively.

对大量的不同运行年数的线棒进行了超声波 V min 和 V av 测量，以及介质损耗角增量 D tan d 、电容变化率 D C / C 0、最大放电量 q max 和平均放电量 q mean 等电气测量试验，对比研究了超声参数( V min 和 V av )和电气测量参数( D tan d 、 D C / C 0、 q max 和 q mean )与运行年数的相关性，发现， V min 和 V av 与的相关性很强，相关系数 R 分别为0.892和0.890，而 D tan d 、 q max 和 q mean 与的相关性较弱， R 在0.55~0.60范围内， D C / C 0与几乎没有相关性， R 仅为0.310；采用线性回归分析，分别建立了 V min 和 V av 与的二阶和三阶线性函数的数学模型， R-S 分别为0.828和0.903，并分别提出了最可靠运行年数和置信度为95％的可靠运行年数的预测方法。

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主要产品包括：铸铁平板、铸铁平台、检验平台、划线平台、铆焊平台、钳工平台、工作台、平尺、方箱、V型架、V 型铁、直角尺、V型铁、桥尺、弯板、机床减震垫铁、调整垫铁、偏摆仪、千斤顶、特种扳手、齿轮齿圈跳动检查仪；花岗石平台、大理石平板、平尺、V型铁、方箱、角尺、V型块、平台支架等。

The nascent product distributions of CaH have been found with a Boltzmann rotational temperature of 1012±102 K and 834± 70K for the v=0 and 1 levels, respectively, and summations of the=(0,0) and=(1,1) rovibrational intensities separately show that the population ratio of CaH(v=0)/CaH(v=1) yields a value of 3.97+0.26, which corresponding to a Boltzmann vibrational temperature of 1313±173 K.

藉由转动振动光谱，可以进一步推测得知初生态CaH的转动分布，并可推得波兹曼转动分布温度在振动态v=0及v=1时分别为1012±102K及834±70K。且可得知初生态CaH在不同的振动态v=0及v=1的分布比例是CaH(v=0)/CaH(v=1)=3.97±0.26，其所对应到的波兹曼振动温度为1313±173K。

And Pharaoh spoke to Joseph, saying, Your father and your brothers have come to you.

47：5 法老对约瑟说，你父亲和你弟兄们到你这里来了。

Additionally, the approximate flattening of surface strip using lines linking midpoints on perpendicular lines between geodesic curves and the unconditional extreme value method are discussed.

提出了用测地线方程、曲面上两点间短程线来计算膜结构曲面测地线的方法，同时，采用测地线间垂线的中点连线和用无约束极值法进行空间条状曲面近似展开的分析。