查询词典 V-grooved

In general we have two kinds of dielectric constant: the absolute dielectric permittivity, V the relative dielectric permittivity r, Vr = 0 = 1 , 0 means the vacuum dielectric constant, dielectric electrode means of EV \\ V \\ rate.

一般我们有两种介电常数：电介质的绝对介电常数，电介质的相对V介电常数r，Vr＝0＝1＋，0指真空中的介电常数，指电介质的电极化EV\V\率。

Although genes encoding V-ATPase subunits have been detected in many plants, and we knew its structure and composition, But expression and regulation of V-ATPase only had a little report In the early stage of our research we found that expression of vacuolar H~-ATPase subunit A gene was induced in drought stress.

尽管目前对于V-ATPase的结构和亚基组成已作了大量研究，编码亚基的基因也已经从许多植物中克隆，但是关于V-ATPase亚基基因在不同逆境下的表达与调控的研究鲜有报道。

The frequency analysis conducted in this study further indicates that while high token frequency results in lexicalization of V-kai complex verbs, high type frequency leads to schematization of V-kai constructions.

本研究所执行的频率分析进一步指出例的频率会导致「V-开」复杂动词的词汇化，而型的频率则会引起「V-开」构式的基模化。

The peak currents i p and peak potentials E p of the oxidation peaks for sodium dichromate solution of different concentrations, i.e ., water under the existence of sodium dichromate, were experimentally measured at different temperatures and sweep rates v on the electrode.

实验测得不同温度、不同扫描速度 v 、不同浓度重铬酸钠溶液即重铬酸钠存在下水在电极上的氧化峰峰电流ip和峰电位Ep，建立了 i p～ v 1/2和 E p～ln v 方程，表明电极反应是主要受扩散控制的不可逆反应。

The optimal processing conditions are as follows: roasting temperature at 1 000℃, roasting time for 40 min, the ratio of NbH dosage to theoretic dosage at 1.1. The specific capacity of niobium suboxide of preparation by agate grind procedure is 69.50 mF·V·g-1, the loss is 11.25%, the leakage current is 1.8×10-4A·F-1·V-1, and the electrical properties are better than that of the national standard (GB/T 3136-1995) of FTa16-300 tantalum powder for capacitor.

用正交试验法及方差分析对玛瑙研磨工艺进行优化，得到制备低价铌氧化物最佳条件是：焙烧温度为1 000℃，焙烧时间为40 min， NbH用量与理论量之比为1.1，所制得的产物杂质含量低，比容为69.50mF·V·g-1，损耗为11.25%，漏电流为1.8×10-4A·F-1·V-1，其电性能指标高于FTa16—300电容器钽粉国家标准(GB/T 3136—1995)所规定的值。

The thermoelectric effect of CNT films has also been studied in this research. The study shows that the thermoelectric force is proportional to temperature difference. The Seebeck coefficience is -15μv/K~-60μv/K, which exhibits that CNT films are n-type.

另外，对碳纳米管膜的温差电效应进行了研究，发现其温差电动势与温差成正比，碳纳米管膜的塞贝克系数在-15μv/K~-60μv/K 之间，碳纳米管膜呈n 型半导体性质。

XRD results indicate that the major diffraction peaks of the film match those of Sb2Te3. The film growth is apparently at the ［101］/［012］ orientation and many Te peaks are observed. Hall measurement reveals that all the samples are p-type and the resistivities are low. The electric conductivity of the films approaches that of the bulk metal and the carrier concentration is of 1023 cm-3. Seebeck coefficient measurement shows that the samples have nice thermoelectrical properties and the seebeck coefficients are in the range of 7.8—62 μV/K. Among all, the samples annealed at 200 ℃ for 6 h have the highest seebeck coefficient of about 62 μV/K and the lowest resistivity.

XRD测量结果显示，薄膜的主要衍射峰与Sb2Te3标准衍射峰相同，在［101］/［012］晶向取向明显，存在较多的Te杂质峰；霍尔系数测试结果表明，薄膜为p型半导体薄膜，薄膜电阻率较低，其电导率接近于金属电导率，载流子浓度量级为1023 cm-3，具有良好的电学性能；Seebeck系数测量结果显示，薄膜具有良好的热电性能，在不同条件下制备的薄膜的Seebeck系数在7.8—62 μV/K范围；在所制备的薄膜中，退火时间为6 h、退火温度为200 ℃的薄膜其Seebeck系数达到最大，约为62 μV/K，且电阻率最小。

As "Elemental predicative construction", according to their different semantics relations, in which " V"s representative intransitive verb, transitive verb and relation verb respectively.

本文以动词为中心，与动词相联系的所有成分归为配角成分、说明成分、域外成分、附加成分等四种，而后根据它们之间的不同语义关系，确定｛X—V｝；｛X—V—Y｝；｛X—V—Y｝等三种"基本表述结构"。

The coefficient V can be named as the dimensionless layer flowing factor, means the ratio of surface coefficients irrespective of production over the total surface coefficients among the maximum surface coefficients under the condition of unideal flow. Obviously, 1-V represents the ratio of the surface coefficients relating with production rate over the total surface coefficients.

系数V可称为无因次层流系数，它表示在所有非理想流动条件下的最大总表皮系数中，与产量无关的表皮系数所占的份额，对应的1-V则是代表与产量有关的表皮系数所占的份额。

The occasion was a momentous one and Churchill flashed the "V for victory" sign—with the forefinger and middle finger raised to form a "V".

之际，是一项重大的一个和丘吉尔射出的" V胜利"的标志-以食指和中指上提出成立一个" V "字。

And Pharaoh spoke to Joseph, saying, Your father and your brothers have come to you.

47：5 法老对约瑟说，你父亲和你弟兄们到你这里来了。

Additionally, the approximate flattening of surface strip using lines linking midpoints on perpendicular lines between geodesic curves and the unconditional extreme value method are discussed.

提出了用测地线方程、曲面上两点间短程线来计算膜结构曲面测地线的方法，同时，采用测地线间垂线的中点连线和用无约束极值法进行空间条状曲面近似展开的分析。