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In using course, our products reflect stability and perfectibility in connecting and disconnecting, long using duration, the whole quality of products is leading positions on average level of domestic market.

凭借先进的工艺技术及装备，选择优良的原材料及严密的质量控制，使生产的离合器面片具有优异的耐磨损性能和物理机械性能，在使用过程中接合平稳、分离彻底、使用寿命长，整体质量水平目前在国内居先进水平。

Perilla seed oil was extracted from the perilla seed by using ultrasonic wave assisted extraction technology. The antioxidantion effects of different antioxidants, such as TBHQ, BHT, and VE were compared with each other by using the Rancimat method.

以紫苏子为原料，利用超声波辅助提取技术提取苏子油；用Rancimat法比较TBHQ、BHT和VE等不同抗氧化剂单独作用及复配时对苏子油的抗氧化作用。

In order to study moisturizing effect of glycerin,petrolatum and common hand-skin care cream,the friction of the natural skin on the back of hand(without the use of hand-skin care products) as well as that after using of care products was measured by using of a micro- tribometer .

为研究甘油、凡士林和普通护手霜3类产品的保湿性能，在微观摩擦试验机上对男女手背自然皮肤及使用过3类护手霜后的摩擦因数进行了试验。

Using Phantasmagoria is easy; you just need to open the image using the program and choose what you want to do with it from the " Improve " or " Effects " menu bar.

使用phantasmagoria很容易；你只需要开放的形象，使用该程序，并选择你想要用它做从"改善"或"效果"菜单栏。

Network analyzers provide a method for measurement of frequency translating devices and these methods are more accurate and can save more time. According the principles of scalar network analyzer and vector network analyzer the authors introduced methods to measure conversion loss of frequency translating devices using scalar network analyzer and methods to measure conversion loss and phase using vector network analyzer.

摘 要：网络分析仪为测量变频器件提供了快速而准确的测量方法，根据标量网络分析仪和矢量网络分析仪的测量原理，详细介绍了用标网测量变频器变频损耗的方法，以及用矢网测量变频损耗和相位的方法。

According the principles of scalar network analyzer and vector network analyzer the authors introduced methods to measure conversion loss of frequency translating devices using scalar network analyzer and methods to measure conversion loss and phase using vector network analyzer.

摘 要：网络分析仪为测量变频器件提供了快速而准确的测量方法，根据标量网络分析仪和矢量网络分析仪的测量原理，详细介绍了用标网测量变频器变频损耗的方法，以及用矢网测量变频损耗和相位的方法。

KR2 with the presence of surfactants and phenanthrene was measured by using spectrophotometer, which compared with the results by using isotopic methods.

首先采用分光光度计方法测量表面活性剂和菲共存时分枝杆菌KR2菌株的生长过程，并与同位素示踪方法的研究结果相对比。

The most parts of thesis as follows:1. Five symmetrical intra-molecular charge transfer oligomeric phenylene vinylene light emitting materials were designed and synthesized using oligomeric phenylene vinylene as a framework.2. The structures of target molecule were characterized by ~1HNMR,~(13)CNMR, IR, MS and element analysis.3. In order to study the influence of the location and numbers of electron-donor and electron-acceptor on their photoelectric performance by changing length of OPV chain, the UV spectra and fluorescence spectra of target compounds has been compared. We have researched into main factors effecting on material emitting red-shift; organic electroluminescence device was prepared using the compound P4. The capability of eletroluminescence was researched.4. The photoelectric properties of P4 was explained by quantum chemical calculation (the Gaussian 98 quantum chemistry program). It is greatly contributed know the whole process of charge transfer to guide the design of red emitters.

本文研究的内容主要包括以下部分：(1)设计并合成5个对称的以齐聚苯乙烯类为骨架的分子内电荷转移型齐聚苯乙烯类发光材料；(2)通过IR，MS，~1H-NMR，~(13)C-NMR和元素分析对所合成的目标化合物进行表征；(3)通过对目标化合物的紫外光谱和荧光光谱比较分析，研究改变OPV的长度，电子给体和电子受体的位置及数量对其光电性能的影响，探讨材料发射红移的主要因素；选取性能良好的目标化合物P4制备成OELD器件，对其电致发光性能进行研究；(4)运用Gaussian98量子化学程序包，采用量子化学方法对目标化合物P4的光电性能从理论加以解释，进一步认识荷移跃迁的整个过程，为红光材料的设计加以指导。

The invention discloses a method to integrate single CMOS with bulk silicon microelectromechanical system, its technical project: 1 forming isolating groove: adopting deep-groove etching, and SiO2 and polycrystal silicon filling to realize the insulation of MEMS structure and CMOS circuit; 2 making standard CMOS circuit; 3 using SiO2 and Si3N4 as mask, etching silicon on the back until exposing SiO2 at the bottom of the isolating groove, to complete the thickness control for MEMS silicon structure layer; 4 completing metalizing the CMOS circuit and masking the MEMS structure: MEMS structure region uses Al as mask and CMOS circuit region uses thick photoetching glue as mask, using DRIE to release silicon structure.

本发明公开了一种将单片CMOS与体硅微机械系统集成的方法，其技术方案为：1形成隔离槽：采用深槽刻蚀，SiO 2 和多晶硅填充，实现MEMS结构和CMOS电路的绝缘；2完成隔离槽后进行标准CMOS电路的加工；3用SiO 2 和Si 3 N 4 作掩膜，从背面腐蚀硅，直至暴露出隔离槽底部的SiO 2 ，完成MEMS硅结构层的厚度控制；4完成CMOS电路金属化和MEMS结构掩膜：MEMS结构区用铝作掩膜，CMOS电路区用厚光刻胶作掩膜，用DRIE释放硅结构。用本发明方法不仅获得了较大的质量块，而且用本发明较高的深宽比制作出的结构电容，同时实现了体硅微机械与CMOS电路的集成，显著提高MEMS传感器的精度和稳定性，具有前沿性和重要实用价值。

In the present invention, such conductor layer is formed by using small number of process steps and without using photolithography process.

在本发明中，这种导体层是用少量工艺步骤形成的而没有用光刻工艺。

The objective is to subjugate and discourage the people, because that allows the elite to continue to rule unopposed.

其目的是压制和打击人民的积极性，因为这可以让实权派继续统治不会沦为反对派。

GOD,this is the second time you vanquished me!

天啊，这是第二次你打败了我！