查询词典 Si

The CSD process was improved by using vanadium inorganic salt instead of the original vanadyl acetylacetonate.It has successfully solved the problem that the metal alkoxides are pricey and difficult to keep.

主要研究结果如下：(1)采用化学溶液沉积法，分别在LaNiO3/Si(100)、Pt/TiO2/SiO2/Si(100)衬底上制备了c轴取向的高质量BVO薄膜。

SiC nanowires grew at the surface of liquid ball and formed villiform nano wire-balls. During the cooling stage in some cases, the SiO reacted with the CO in the furnace to form SiO_2 which then deposited on the surface of SiC nanowires, forming the SiC/SiO_2 nanocable with SiC as the core and SiO_2 as the wrapping layer.

由于Ni-Si化合物跟石墨的浸润性较差，在仅比化合物熔点高出小于200℃的温度区域内，Ni-Si化合物熔体不能在石墨板上熔敷而是形成合金熔球，最后在熔球表面上生长出SiC纳米线形成形状独特的SiC纳米线绒球。

But in summer and autumn the effect is mostly due to the withstanding of the northward sea current and the westward coastal current.In wint...

显然，南流江径流对北海湾溶解性N、P、Si贡献最大，这是导致该湾N明显偏高、P成为赤潮诱发因子、Si成为最丰富营养盐的主要原因。

One pathway arrived at NCNs in SI by relay of VPL, the other arrived at NCNs in SI via another interneuron circuit, that might accompanied with the neurons participated.

一条经VPL中继后由直接通路到达；另一条可能有中间神经元参加，经由其它神经环路到达SⅠ区NCNs，那么VPL刺激相关与非相关的NCNs是否在形态上也有某些差异？

The micropheres activized by composite silane coupling agent can partly subsitute SRF and be doped in SBR/NR.

采用Si-1和Si-3协同处理微珠，其填充制品性能优于单一硅烷偶联剂处理微珠效果。

The effective channel mobility of4H-SiC MOSFETs is increased significantly by high temperature anneals in nitric oxide.4H-SiC MOSFET with hydrogen postoxidation annealing has a lower threshold voltage of3.1V and a wide gate voltage operation range in which the inversion channel mobility is more than100cm 2 /Vs.

SiC的雪崩击穿电场是Si的十倍，因此，理论上SiC单极功率器件的导通电阻可以比Si器件的低400倍，但在6H-SiCMOS结构中，由于反型层的电子迁移率较小，沟道迁移率测量值仅为40～50cm2/Vs，远远低于6H-SiC的体迁移率400cm2/Vs眼1熏2演，限制了SiC功率MOSFET的导通电阻Ron。

Is graceful the Si family to inherit the eldest son--Approximately Niya. Is graceful Si Hazhan in the castle turret. In the hand is taking bottle of mellow brandies.

曼得斯哈家族的继承长子——约尼亚·哈站在城堡的塔楼上，手里拿着一瓶香醇的白兰地。

The complicacies of SI determine that the uses of many interpreting strategies or techniques like omission, addition and substitution will be inevitable, which has been touched upon in much SI literature.

作者从比较真实会议原语及译语录音出发，证实了在所研究数据中，同传译员采取二语习得中的部分交际策略来保证信息的传递和交流。

MgO-C brick has a good erosion resistance but Al〓O〓-C brick is better. Corrosion mechanism for refractory without carbon is that FeO and oxides of molten slag take place chemical reaction with constituents of refractory and forming low fusing point compounds to be dissolved in molten slag. For those refractory containing graphite carbon is to be decarburized in advance and to form decarburizing layer and metamorphosis layer. The subsequent corrosion is decarburizing and taking chemical reaction to form low fusing point compounds and dissolved in molten slag at the same time.

铁浴中硅和钛的扩散是影响铁浴及熔渣与耐火材料作用的重要因素，耐火材料中添加的TiO〓和SiC受熔渣氧化和侵蚀，将被部分还原形成Si，Ti向铁浴中扩散，Si、Ti在铁浴中的扩散研究结果是： D〓=1.84×10〓exp（－5988.7/T） cm〓/S E〓=49766 J/mol D〓=7.76×10〓exp（－53225.5/T） cm〓/S E〓=442304 J/mol 铁浴式熔融还原熔体对粘土砖，高铝砖，镁砖的侵蚀速度很高，镁碳砖抗侵蚀能力比前几种耐火材料强，但不如铝碳砖；对不含碳耐火材料在熔体中的侵蚀是熔渣中FeO及其它氧化物与耐火材料组分的化学反应形成低熔点物熔蚀进入渣相，产生损毁。

The thicker Si spacer of Ge QDs results in the lower degree of Si-Ge intermixing.

而愈厚的矽间隔会让量子点中的矽锗混合比例降低。

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。