查询词典 Si

It is indicated that the damping of the alloy is induced by phase interface slipping or grain boundary viscous sliding, the infinitesimal plastic deformation which is caused by the difference of elastic modules and heat expansion coefficients between phases of the alloy.

结果表明： ZA27-4%Si合金阻尼随频率增大而减小，随温度升高而增大，阻尼不随应变振幅的变化而变化； ZA27-4%Si合金室温阻尼为5.83×10-3，与ZA27合金阻尼相当； ZA27-4%Si合金的阻尼是由合金内部的晶界和相界面滑动、位错振动以及各相的热膨胀系数和弹性模量间差造成的微塑性变形共同造成的。

Type of Adam · Si Mi model is indicating of western economics Fan Shi build at first, the limit revolution of the person such as Jevons passes the Fan Shi that formed new classical economics integratedly of Marshall, abandoned Si Mi's labor theory of value, will replace with effectiveness axiology, can say the revolution that is Fan Shi of pair of Si Mi economics.

亚当·斯密范式标志着西方经济学范式的最初建立，杰文斯等人的边际革命经过马歇尔的综合形成了新古典经济学的范式，抛弃了斯密的劳动价值论，用效用价值论来代替，可以说是对斯密经济学范式的革命。

The results show that the SI value of MAP is the logarithmic function of the mass concentration of P, of ammonium N and of Mg, respectively, and increases with the increase of the mass concentration of each element, The SI value of MAP is a polynomial function of the solution pH value, and the optimum pH value for the crystallization of MAP is 9.0 and increases slightly with the increase of N/P. Moreover, the SI value of MAP is a power law function of the solution ionic strength but decreases with its increase.

计算结果表明，磷酸铵镁的饱和度指数与氮、磷、镁的质量浓度分别呈对数函数关系，并随任何一个因子的增大而增大；与溶液pH值呈多项式函数关系，结晶反应的最佳pH值为9.0，并随溶液中氨氮与磷摩尔比的增大而略升；此外，磷酸铵镁的饱和度指数与溶液离子强度呈幂函数关系，随离子强度的增大而减小。

Oxidation, diffusion, photoetching process and etching technology were adopted to achieve thin silicon foil with a thickness of 3 to 4 micrometers. The surface roughness was about 10nm and the grain size of silicon foil was nanometer scale. The preparation parameters were studied to control the roughness of thin silicon foil .

通过台阶仪测量厚度在3～4μm的Si平面薄膜，在扫描范围为1000μm时，它的表面粗糙度为几十纳米；SEM测量表明，Si薄膜表面颗粒度在纳米量级；探讨了采用控制扩散、腐蚀参数和表面修饰处理来降低Si膜表面粗糙度的方法。

FeSi nanoparticles were synthesized via thermal decomposition of iron pentacarbonyl in the solution of dioctyl ether, stabilizers oleic acid and oleylamine. The TEM images showed that FeSi nanoparticles had cubic shape, but it seemed that the composition was not uniform. According to the EDS results, the Fe:Si ratio of gray-uniform nanopaiticles was almost 1:1, and blacker FeSi nanoparticles contained more Fe atoms. Although FeSi didn't have uniform structure, it still could be proved that the incorporation of Fe and Si existed in a single nanoparticle. All possible structure, lattice, binding, morphology, surface condition would be discussed. These results indicated that perhaps FeSi2 was the main structure of the new products; however, due to incompletely combination and less synthesized time, it might still contain some part of Si and Fe structure. Besides, FeSi nanoparticles preserved the optical properties from Si atoms, but the PL intensity was much lower. The maxima PL peak appeared at 388 nm with the excitation at 300 nm. Their saturation magnetization, remanent magnetization and coercivity were measured by the SQUID, exhibiting their nearly superparamagnetic behavior.

利用热裂解系统可成功将研磨矽奈米粒子及五羰铁结合，制备出铁矽奈米粒子；从穿透式显微镜照片可知其粒子呈现立方体型态，但颜色深浅及组成不均，EDS结果则显示颜色均匀之粒子铁与矽之组成大致为1：1，颜色较深之粒子则含有较高量的铁元素；尽管组成比例并不统一，但单颗粒子同时含有矽与铁两种元素，初步说明铁矽奈米粒子之形成；进行多种结构与表面分析并探讨所有可能之键结、结构及表面元素后，推测铁矽奈米粒子可能以FeSi2之结构形成，并同时包含未重组完成的矽及铁之结构；利用PL分析得知铁矽奈米粒子确实保留矽之放光特性，并在300 nm激发光源下，於波长388 nm处有一最强放光特性峰，但整体发光效益不及研磨矽奈米粒子之结果；最后，利用超导量子干涉磁化仪量测其饱和磁化量、残留磁化量、与矫顽磁力，发现磁滞现象并不明显而几乎呈超顺磁性。

"Half-water-hydrolysis"method is used to modify the preaminolysis of phenylenediamine in"step coupling polymerization". First, dehydrochlorination polycondensation between Si-OH and Si-Cl group during polycondensation reaction is employed instead of dehydration reaction between Si-OH groups before, which avoids the disconnection of Si-N bond destreyed by isolated water and improves the H-bonding template effect of the bridged-phenylenediamine.

探索用&半水水解-脱氯化氢缩聚&法对我组过去提出的&全水水解法&的预胺解法加以改进，经&半水水解&得到的含硅羟基和硅氯基的单体再以脱氯化氢代替脱水的方法减少了极性溶剂存在下游离水断裂梯撑模板的硅-氮键的可能性，有效地提高了对苯二胺梯撑中氢键的模板作用。

For the polysilicon gate, we proposed a new stacked polysilicon film process combines polysilicon with amorphous silicon films and found doped stacked poly-Si films with lower surface roughness and smoother poly-Si/polyoxide interface than doped a-Si and conventional poly-Si films.

针对多晶矽闸极，我们提出堆叠式多晶矽薄膜沉积方法，此方法是在多晶矽薄膜上沉积非晶矽薄膜。

In addition, the hypha could also invade the rice root.3、Making clear the effects of silicon on the resistance to sheath blight and rice growth.Sodium silicate was added into the nourishing in the entire growth period and short period of rice, after being inoculated with R.solani, the rice with application (the Si+ rice) of resistant cultivar 91SP and Teqing had lower (but not statistically significant) disease rating and disease index with relative control effect of 10.02% and 8.70% compared to the Si- rice plants in, but the Si+ rice plants of susceptible cultivar Lemont and Ningjing 1 had significantly lower rating and disease index with relative control effect of 27.42% and 24.29% compared to the Si- rice plants. The results indicated silicon could strengthened the resistance to rice sheath blight, specially strengthened the resistance of susceptible cultivar Lemont and Ningjing 1 remarkedly.

纹枯病菌也能侵染水稻根部。3、明确了施硅对纹枯病的抗病效应和水稻生长的影响全生育期和短期在营养液中添加硅水培水稻试验结果表明，施硅减轻了病级和病情指数，施硅对抗病品种91SP和特青的相对防治效果分别为10.02%和8.70%，而对感病品种Lemont和宁粳1号的相对防治效果达27.42%和24.29%，说明施硅增强了水稻对纹枯病的抗性，特别显著增强了感病品种Lemont和宁粳1号的抗性。

It was shown that the root elongation was inhibited and the malonaldehyde content in root apices and the antioxidase activities of root apices were increased under Al stress (30 μmol/L), while the effects of Al were significantly alleviated by the addition of Si (1.4 mmol/L). Moreover, both Si added before Al treatment and Si added simultaneously with Al treatment could alleviate these effects. On the other hand, the cultivar of Seca was shown to be more sensitive to Al than other cultivars in the absent of Si, while Al-resistance distinction among the cultivars of stylosanthes turned to be non-significant in the present of Si in the pre-cultured solution or both pre-cultured and Al-treatment solutions.

研究结果表明，在铝(30 μmol/L)胁迫条件下柱花草根伸长受阻、根尖丙二醛含量和抗氧化酶活性显著增加，而硅(1.4 mmol/L)处理增加根中硅的含量而降低了铝对根伸长、MDA含量和抗氧化酶活性的影响，且铝处理前12h供给的硅和前处理溶液及铝溶液中均加硅处理的影响均显著；在不加硅条件下西卡品种的耐铝性显著低于其它品种，而经硅预处理的植株和在预处理及铝处理期间均供应硅的植株的耐铝性不同品种间的差异不显著。

On CHE programming, the higher coupling ratio of control-gate makes the higher electrical field across TOX in Si than Ge. Also because of the continuity of displacement vector, the higher permittivity of Ge would cause the lower electrical field at interface. We get the higher gate current in Si than Ge. On CFN programming, the higher CT in Ge would show the higher electrical field across TOX. However, the parameters of F-N tunneling are calculated and showing the gate current in Si is larger than Ge. On the same mechanism of F-N tunneling erasing, the parameters also show the higher electrical filed of Si would cause the higher erasing speed. The continuity of displacement vector also explains the higher electrical field at interface for F-N tunneling programming/erasing.

从通道热电子穿隧写入的模拟结果发现，由於控制闸极耦合电容的影响，加上电位移向量在半导体-氧化层界面连续的观念，拥有较高介电常数的锗反而得到较小的等效电场，决定了穿隧电流反倒是不如矽基板；在F-N穿隧写入的模拟中，即便锗基板拥有较大的总耦合电容，使得在浮闸的耦合电压大於矽基板，但仍旧是半导体-氧化层界面的电场扮演了穿隧电流的决定性因素，得到的结果仍旧是矽基板的写入速度高於锗基板；在F-N抹除的模拟中，运用与F-N写入相同的数学模型，仍旧看见在锗基板上未能得到速度上的改善，同时用数学的计算展示了合理的解释。

For a big chunk of credit-card losses; the number of filings (and thus charge-off rates) would be rising again, whether

年美国个人破产法的一个改动使得破产登记急速下降，而后引起了信用卡大规模的亏损。

Eph. 4:23 And that you be renewed in the spirit of your mind

弗四23 而在你们心思的灵里得以更新