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SBT thin films were deposited on Pt/TiO〓/SiO〓/Si substrates by metalorganic decomposition method.

采用金属有机化合物分解法在Pt/TiO〓/SiO〓/Si衬底上制备了性能优异的SBT薄膜。

ZnO films with mosaic structure are grown on Ag-Si(111) templates by atmospheric-pressure metalorganic chemical vapor depositon.

采用常压金属有机化学气相沉积法，在Ag/Si(111)衬底上成功地生长出马赛克结构的ZnO薄膜。

Direct growth of GaN films on Si(001) substrate at low temperatures (620～720℃) by electron cyclotron resonance microwave plasma enhanced metalorganic chemical vapor deposition.The crystalline phase structures of the films are investigated.

研究了用电子回旋共振等离子体增强金属有机物化学气相沉积技术在Si(001)衬底上，低温(620～720℃)下GaN薄膜的直接外延生长及晶相结构。

The results showed that during 96 hours culturing, Paenibacillus polymyxa and its metabolites can promote dissolving microperthite both by direct and indirect mechanisms. The direct mechanism can promote releasing Al, but has little effect on K and Si, which are considered to be mainly released by indirect mechanism.

结果表明，在细菌生长的0~96h内，细菌及代谢产物能通过直接和间接作用共同促进微纹长石的溶解，但微纹长石中各元素的溶出在方式上有一定的差别，K和Si的溶出主要受间接作用的影响，而Al的溶出主要受直接作用的影响。

Based on the study on the monovariant eutectic reaction in Al-Mg〓Si-Mg〓Ge ternary system, possibility of using the composite compound as the strengthening phase was examined primarily.

通过对Al-Mg〓Si-Mg〓Ge系中单变度共晶反应的研究，对复合型化合物作强化相的可行性作了初步探讨。

Si MAS NMR was used to study the distribution of the framework aluminium on crystallogrophically nonequivalent tetrahedral sites of offritite samples.

7提出了从〓Si MAS NMR谱间接得到在菱钾沸石两种不等价位上的铝占据比率r的新方法。

The theoretical analysis and the experimental results consistently show that, the oxidation of Si〓N〓-bonded SiC refractory adheres to the parabolical type rule of oxidation and the oxidation in the condition of actual BF operation is passive one.

在此基础上，综合SiC砖蚀损过程研究结果，阐述了炉墙传热过程与其蚀损的相互关系，进而探讨了高炉用Si〓N〓结合的SiC砖的适宜条件，提出了控制碱蚀、减轻热震破坏以及改善高炉用SiC质砖衬的使用效果的技术方向和途径。

The EMPA results indicate that the main chemical compositions of the "Lvlongjing" sampe are SiO2 and MgO, followed by Al2O3 and FeO, and the chemical formula is calculated and projected to be in the area of penninite according to Fe(superscript 2+)/R(superscript 2+) and atomicity of Si.

电子探针结果表明，该&绿龙晶&样品的主要化学成分为SiO2和MgO，其次为Al2O3和FeO；计算其晶体化学式并根据Fe(上标 2+)/R(下标 2+)和Si的原子数量进行投影，恰好落于叶绿泥石的区域范围。

The photoluminescent properties of SiO_2 buffer layer deposited on Si substrate at room temperature was investigated.

研究了在Si衬底上制备的SiO_2缓冲层在室温下的光致发光性能。

And it is expected to replace the expensive organic polymer coagulants which were often suspected of being dangerous to human.The preparation technique of HSPSAS was introduced in this paper. The parameters of the process were discussed by the method of orthogonal design, such as molar ratio of Al/Si, the pH of polysilicate, the aging time of polysilicate, the pH of PSAS, the aging time of PSAS, intake of PSAS, and so on, and then an optical technology was obtained.

本文介绍了聚硅酸硫酸铝絮凝剂的制备工艺，并利用正交设计的方法，对其中Al/Si摩尔比、硅酸熟化pH值、聚硅酸熟化时间、药品熟化pH、药品熟化时间、投药量等制备参数进行了分析和讨论，得到优化的制备条件，确定了更为合理的制备工艺。

For a big chunk of credit-card losses; the number of filings (and thus charge-off rates) would be rising again, whether

年美国个人破产法的一个改动使得破产登记急速下降，而后引起了信用卡大规模的亏损。

Eph. 4:23 And that you be renewed in the spirit of your mind

弗四23 而在你们心思的灵里得以更新