查询词典 Si

The valence electron structure of medium chrome cast iron matrix is set up and the effect of Si on medium-temperature phase transformation is analyzed by using empirical electron theory of solids and molecules.

此文建立了290Cr8Si2中铬铸铁基体的价电子结构，运用固体与分子经验电子理论分析了中铬铸铁中Si对铸铁中温相变的影响，分析和实验结果表明，290Cr8Si2中铬铸铁基体含C、Cr、Si的-γFe晶胞中，C原子与Si原子的结合力强于C原子与Cr原子的结合力，中铬铸铁中较高的含Si量降低了铸铁基体的含Cr量，进而降低了中铬铸铁的淬透性。

In this paper,the Raman spectrum were used to study sapphire,dichroite,aquamarinl,topaz and kyanite,it is found that the characteristic Raman translocations of sapphire which are caused by Al-O vibration are 413cm-1,640cm-1 and 668cm-1,the characteristic Raman translocations of dichroite which are caused by Si-O vibration are 550cm-1,662cm-1,964cm-1and 1176cm-1,the characteris.

本文通过对蓝宝石、堇青石、蓝色托帕石、海蓝宝石和蓝晶石的拉曼光谱进行测试与研究，得到蓝宝石具有由Al-O振动引起的特征拉曼位移413cm-1，640cm-1和668cm-1；堇青石具有由Si-O振动引起的特征拉曼位移550cm-1，662cm-1，964cm-1和1176cm-1；海蓝宝石具有由Si-O振动引起的特征拉曼位移678cm-1，1064cm-1，1232cm-1；蓝色托帕石具有由Si-O振动引起的特征拉曼位移844cm-1和924cm-1；蓝晶石具有由Si-O引起的特征拉曼位移933cm-1和1133cm-1。

Each In atom is bonded with one Si atoms and two neighboring In atoms; b The adsorption energy of single In atom on the FHUC of the Si(111)-7x7 is 0.2eV higher than that on the UHUC. As a result, In atoms prefer to enucleate at the UHUC and develop into ordered dots array accordingly.

第一原理计算表明， a六个 In 原子在 Si(111)-7x7表面形成一种扭曲的六边形结构，每个 In 原子与一个衬底 Si 原子及两个相邻的 In 原子形成共价键，这些共价键具有类 sp2构型； b单个 In 原子吸附在 Si(111)-7x7单胞的 FHUC 时的吸附能较吸附在没有层错的一半的吸附能低0.2eV/原子，故而 In 团簇优先在 FHUC 成核生长并进而形成有序的点阵结构。

The study of acceptor Ga open-tube diffusion in SiO2/Si has been carried for several decades, whose pursuing was only to get the diffused surface of high uniformity and reproducibility and impurity distribution in Si which can improvethe electrical performance of the devices, but the various manifestation of Ga segregation effect at the SiO2-Si internal interface and the dynamic intendancy of the impurity concentration variability have not been reported.

关于受主杂质Ga在SiO_2／Si系统进行开管掺杂的研究已有几十年的历史，研究的内容与追求的目标主要集中在如何获得高均匀性、重复性的扩散表面和提高器件电学性能的硅体内杂质分布形式，而对Ga在SiO_2-Si内界面上分凝效应的各种表现，以及由此造成的近硅表面杂质浓度动态变化趋势尚未见报导。

The research team have ever fabricated the thin-film of ther mocouples by Multiple Arc Ion plating, and the contributions of the film are deviating from the target, so the Seebeck coeffcient is not in accordance with the normal thermocouples composed of Ni-Cr/Ni-Si wires, which lead to the larger error when Ni-Cr/Ni-Si wires was applied to the cuting test as compensation lead.

本课题组曾采用多弧离子镀方法制备Ni-Cr/Ni-Si薄膜热电偶，由于薄膜成分偏离标准大块Ni-Cr/Ni-Si材料，导致热电偶塞贝克系数与标准Ni-Cr/Ni-Si丝式热电偶相差较大。

IR spectrum by force to discover around 393 Nm, the Si with the compound and filmy Ti3+/SiO2 that MTES decorates, the absorption of OH peak intensity is filmier than Ti3+/SiO2 reduce slightly, si, O, the absorption of Si the peak increases apparently, show structure of network of oxygen of compound and filmy silicon is more regular, the film of even and dispersive.

IR光谱发现，MTES修饰的Ti3+/SiO2复合薄膜的Si—OH的吸收峰强度比Ti3+/SiO2薄膜的略减小，Si—O—Si的吸收峰明显增强，表明复合薄膜硅氧网络结构更规则，有利于Ti3+的均匀分散。

On the one hand,PH_x(x=2,1) can insert into the Si-Si backbond at elevated temperature,and a surface Si=P or a subsurface Si_3P unit was formed via subsequent H_2 liberations.On the other hand,the PH_2 species adsorbed on the Si_r site may completely dissociate across the other two unsaturated adatoms,and P adsorbed on the Si_r site may desorb in P_2 gas form at high temperature.

一方面，在高温下PH_x(x=2，1)可插入Si-Sibackbond，继而经过脱H_2步骤形成表面Si=P单元或次表面Si_3P单元；另一方面，吸附在Si_r位上的PH_2也可能在相邻的另两个Si adatom上实现后两个P-H键的解离，在高温下，吸附在Si_r位上的P可能以P_2的形式脱附。

In this dissertation,preparation and thermoelectric characterization of conventional silicon-based materials and devices have been studied, including amorphous silicon films, polycrystalline silicon germanium films and amorphous silicon thin-film-transistors. A novel MEMS-IC integration method based on porous silicon micromachining has been developed, which is used to fabricate resistive bolometers with a-Si and polySiGe films, and a-Si TFT-based room-temperature infrared detector pixels and 8×8 arrays with primary capability of thermal imaging have been reported for the first time.

本文深入系统地研究了a-Si薄膜、polySiGe薄膜和a-Si TFT等三种常规硅基材料和器件的制备方法和热电特性，开发了一套新型的基于多孔硅牺牲层技术的MEMS-IC集成工艺，利用该工艺成功地制作了a-Si和polySiGe薄膜电阻式测辐射热计，在国际上首次提出并实现了基于a-Si TFT的室温红外探测器单元与8×8阵列原型，器件初步具备了室温红外热成像的能力。

Therefore in ideal case, the hydrogen molecules will start to desorb from Ge-Ge dimers at a lower temperature, from Ge-Si dimers at a middle-high temperature, and from Si-Si dimers at a high temperature.

在理想状态下，在较低的加热温时氢分子应从Ge-Ge双原子单体开始脱附，在稍高的温度由Ge-Si脱附，在更高的温度才会由Si-Si脱附。

The latter played a key role to the formation of the final Si-NPA.2. Si-NPA is composed of large quantities of well-separated, quasi-identical siliconpillars with a cross section size of ~1.5 m. These silicon pillars are uniformlyarrayed and perpendicular to the surface.

新鲜制备的Si-NPA具备下述结构特点：(1)Si-NPA是具有明显的尺度结构层次的微米／纳米结构复合体系；(2)在微米层次上，Si-NPA由大范围均匀排列的、彼此很好分离的硅柱组成，柱的横截面尺寸约为1.5nm；(3)在纳米层次上，Si-NPA中的硅柱均呈多孔状，孔径在～20-40nm，孔壁由粒径约为5nm的硅纳米晶粒组成。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。