查询词典 Si

Lead zirconate titanate PbZr0.5Ti0.5O3 thin films of various thickness were prepared by a modified sol-gel method on Pt(111)/Ti/SiO2/Si(100) substrates. The films were well crystallized and had single perovskite phase structure at an annealing temperature of 600℃.

采用改进的溶胶-凝胶技术，在Pt(111)/Ti/ SiO2/Si(100)基底上制备了不同厚度的Pb (Zr0.50Ti0.50)O3薄膜，在600℃的退火条件下获得了晶格完善的钙钛矿结构。

Simply inferred the optical-rectification effect in the silicon, discovered the optical electric voltage aeolotropic rule through the experiment of observing the relation between the optical electric voltage and the light wave direction of polarization and the orientation of crystal changing when the Si/Al schottky barrier has been illuminated, and confirm the reason is that the existence of self-field destroy the crystal symmetry, produce second-order nonlinear optical-rectification effect, and the direct-current field which has been produced by the optical-rectification effect and the self-field affect mutually.

推导了硅中的光整流效应，并通过观测Si/Al肖特基势垒受光照时产生的光生电压与光波偏振方向和晶向的变化关系的实验，发现了光生电压的各向异性规律，并确定这是由于内建电场的存在使晶体对称性被破坏，产生二阶非线性效应的光整流，光整流产生的直流电场又与内建电场相互作用的结果。

The result of thermodynamic calculation shows that the reduced products of V_2O_5 carbothermic reduction is the carbide of vanadium,the system of silicothermic reduction should add CaO, aluminothermic reduction can reach a reduc- tion rate of 99%,the reduction ability of Al is more effective than that of C and Si.

热力学计算结果表明，V_2O_5碳热还原产物是V的碳化物；硅热还原体系中需配加CaO；铝热还原可以得到99％的还原率，Al的还原能力比C和Si都要强。

The results showed that hole must be involved when silicon was anodically etched in HF solution and anodic dissolving process was controlled by the charge transfer at the Si/HF solution interface not by the mass transfer.

研究发现，硅在HF溶液中的电化学阳极溶解必须有空穴参与，溶解过程不受质量传递控制，而主要受Si/HF界面空穴传递所控制。

The study revealed that: 1 chlorite occurred in vein, agglomerate or had the false pattern of biotite type, or the worm or bladed configuration; 2 Fe/Si diagram revealed mast of the chlorite occurred in the ferroamesite and aphrosiderite areas, few in the pycnochlorite area; 3 the formation temperature of chlorite varied from 179-276℃, mainly within the range of 230-260℃ as calculated by the empirical equation presented by Battaglia; 4 chlorite was formed in the reducing condition, the main formation mechanisms were dissolution-precipitation and dissolution-migration-precipitation.

研究表明：①岩石中绿泥石主要呈脉状、黑云母假象或团块状等产出，具有蠕虫状、叶片状等形貌特征；②绿泥石的Fe/Si图解显示201和361铀矿床中绿泥石主要为铁镁绿泥石和蠕绿泥石，少数属密绿泥石；③根据Battaglia提出的经验方程式计算了201和361铀矿床绿泥石的形成温度变化于179~276℃之间，且主要介于230~260℃之间；④绿泥石主要形成于还原环境，其主要的形成机制是溶解－沉淀和溶解－迁移－沉淀。

FML enabled SI to simultaneously test user feedback from GWs with and without the arrowless ME.

不论ME，FML是否有拉线，都能够使SI同时测试玩家关于GWs的反馈。

The asymmetric distributions of the surface optical second harmonic generation through azimuthally angular scans for thin silver films deposited on Si(111) wafers have been detected with different polarizations of output beams.

实验发现成长於Si(111)基板的银薄膜，以入射基频光、反射二次谐波的不同偏振组合观察到有不对称的方位角二次谐波强度分布之情形。

Suddenly, si apen Sidongen saw me. He is the one who's son married someone from Batan."What happened? Why are you crying?"

忽然，那个 si apen Sidongen 看到了我，就是他小孩娶了巴丹人的那个人&你怎麼了，为什麼哭？&

From acoustic wave equation, current continuity equation and boundary conditions, we have solved the interface potential produced by BAWs in interface between piezoelectric solid and semiconductor. The results of YZ LiNb03/n-Si structure with SV wave incidence have been calculated and experimental result has been given. Finally, we have presented some kinds of BAW acoustoelectric convolver structures and analyzed their features.

由声波动方程，边界条件和半导体的电流连续性方程出发，推导出了斜入射体波在压电体/半导体界面产生的界面电势以及通过半导体的作用产生的倍频电势的结果，并且对YZ-LiNb03/n-Si结构，SV波入射的情况进行了计算，给出了部分实验结果，提出了几种可能的体波声电卷积器的结构，并分析了它们各自的特点，理论和实验的结果将为今后这类器件的研制提供依据。

The Nd_2O_3 films grown on Si(111) have the cubic bixbyite structure with the space group of Ia-3 and a high-quality single crystalline structure with [111] orientation as the surface normal, which are the same to those of the Gd_2O_3 films.

与Gd_2O_3相同，生长的Nd_2O_3薄膜也为立方相的方铁锰矿结构，空间群为Ia-3，以[111]为面外方向，Nd_2O_3薄膜也具有高质量的(111)单晶性能，与基底的匹配关系也与Gd_2O_3/Si(111)完全相同。

For a big chunk of credit-card losses; the number of filings (and thus charge-off rates) would be rising again, whether

年美国个人破产法的一个改动使得破产登记急速下降，而后引起了信用卡大规模的亏损。

Eph. 4:23 And that you be renewed in the spirit of your mind

弗四23 而在你们心思的灵里得以更新