查询词典 Si

After T6 heat treatment, the eutectic Si particles become small granular or short bacilliform, and the aspect ratio and area fraction of Si particles decrease evidently. The energy of the T6-treated castings is 1.453.80 J, which is higher than that of the as-cast castings. Furthermore, the fracture mechanisms of different regions in the castings were analyzed and discussed.

结果表明：铸态下共晶Si粒子大多为纤维状或长针状，呈不均匀的网状分布，冲击吸收功在1.17~2.35 J的范围内变化后；经T6热处理后，团簇状Al-Si共晶相明显减少，共晶Si粒子呈现出粒状或短棒状，且细小均匀，Si粒子的长宽比和面积分数都有显著降低，冲击吸收功在1.45~3.80 J的范围内变化，比铸态有明显提高。

We conclude that SI can be performed safely following exercise challenge in asthmatics with EIB, and that the seerity of EIB prior to SI is not a major determinant of bronchoconstriction during SI.

在运动支气管痉挛性哮喘患者运动激发后进行SI是安全的，SI前EIB严重度并非SI时支气管痉挛主要决定因素。

The feldspars of topaz-lepidolite granite in Yashan late stage are P-rich albite and Kfeldspar, and the phosphorus goes into feldspar structure in the form of PAlSi〓 substitution. The phosphorus contents of feldspars vary according to their crystal habitus. In general, the feldspars of later generation have the higher average phosphorus content than that of earlier generation, and the albite contains higher phosphorus than the K-feldspar in the same generation. The zircon is highly rich in Hf, U, P and Al. The phosphorus enters the zircon structure mainly by the form of〓P〓〓Si〓, Al〓P〓Si〓 or P〓Al〓Si〓, Zr〓 substitution. The P-rich zircon is the production of the highly evolved magma, and it might be one of the important characteristic minerals of the high-P subtype granite. The manganocolumbite, manganotantalite, wodginite and titanowodginite are the main niobium and tantalum minerals.

雅山晚阶段黄玉锂云母花岗岩的长石矿物是富磷长石，磷以PAlSi〓替换方式进入长石结构中，并且在长石中的分布很不均一，一般是晚结晶的长石比早结晶的长石的磷含量高，同期结晶的钠长石比钾长石的磷含量高；锆石矿物为高度富铪、铀、磷和铝的锆石，磷主要以(Y， HREE， Fe)〓P〓〓〓Si〓〓、Al〓P〓Si〓〓、P〓Al〓Si〓〓Zr〓〓等替换方式进入锆石晶格中，富磷锆石是岩浆高度演化的结果，是高磷花岗岩的特征矿物之一；雅山含有丰富的磷锂铝石，是高磷花岗岩的主要磷酸盐矿物；铌—钽矿物主要有铌锰矿—钽锰矿、锡锰钽矿—钛锰钽矿、细晶石等。

Al /AlLi-Mg〓Si and α/TiAl〓-Mg〓Si pseudobinary directional eutectic composites with fine structural integrity were achieved by investigating the influence of various amounts of alloying Li and Ti on the eutectic line, the preferred eutectic reaction point and the range in which eutectic structure appears in Al-Mg-Si system, through which the modification on the matrix and strengthening phase in this system was realised.

通过考察不同含量Li和Ti合金化对Al-Mg-Si系中共晶线、最佳共晶成分点及产生共晶组织的范围的影响，制备了组织完整性良好的α/AlLi-Mg〓Si和α/TiAl〓-Mg〓Si伪二元定向共晶复合体，从而实现了对其基体和强化相的调整。

For obtaining good structural perfection, the molecular beam epitaxial growth of Ge〓Si〓 on Si substrate should not only be in pseudomorphic form but also in layer-by-layer growth stage.

本文通过对Ge〓Si〓/Si异质体系的生长模式的研究发现，Ge〓Si〓在Si衬底上只能在一定的厚度范围内保持二维生长，超过这一厚度范围就变成三维生长。

ABSTRACT In this dissertation, the device physics, optimum structures, material design and growth and fabrication of Si/SiGe heterojunction bipolar transistor , as well as the physical parameter models for pseudomorphic Si〓Ge〓 layers grown on Si substrate have been studied systematically.

本文在Si/SiGe HBT器件物理、优化结构、材料的结构设计与生长、器件的实验研制以及外延在Si衬底上的Si〓Ge〓赝晶层的材料参数模型等方面进行了较。。。

The Si-rich SiO2／p-Si structure has been fabricated with two-target alternative magnetron sputtering technique.After the Si-rich SiO2／p-Si sample having been scored by diamond tip on the front surface and annealed at 800℃ in N2 the photoluminescence spectrum is found quite different from that from the unscored one,which having been annealed in the same condition.

以磁控溅射方法于p-Si上淀积富硅二氧化硅，形成富硅二氧化硅／p-Si结构，用金刚刀在其正面刻划出方形网格后在N2气氛中退火，其光致发光谱与未刻划的经同样条件退火的对比样品的PL谱有很大不同。

It indicated that the multiple-layered films were mainly composed by C-F, C=C and Si-O bonging, a little Si-C and Si-F bonding were also existed because of history effect. The bondgap were calculated as 2.7eV. The dielectric constant of the multiple-layered films was close relative to the thickness of the covering layer-SiOx, so the thickness had better be reduce. The bonding configurations of multiple-layered films had no evident changes after 400癈 annealing, the thickness raise very little and the dielectric constant increase 8%. Compared with one-layered a-C:F films prepared in the same conditions, the SiOx/a-C:F/SiOx multiple-layered films had a better thermal stability.

结果表明，多层膜主要由C-F，C=C，Si-O键构成，由于器壁的历史效应，薄膜中还存在少量Si-C和Si-F键；多层膜的光学带隙经计算约为2.7eV；多层膜的介电常数与包层SiO_x厚度有很大关系，应尽可能减小SiO_x厚度；在经历200-400℃的N_2氛围中退火后，多层膜的红外结构没有发生太大的变化：膜厚度稍微增大，介电常数只增加了8％，与同样制备条件下沉积的单层a-C：F薄膜相比具有较好的热稳定性。

The results show that the films are characterized by the amorphous microstructure and mainly composed of Si C bondings, C C bondings as well as a small mount of oxide impurity consorted with Si; the content of the C C bondings decreased after annealing in vacuum, meanwhile the Si C bondings content increased, annealing in vacuum is beneficial to the formation of SiC; after annealing at 800 in air, a thin dense layer of SiO2 formed on the surface, which prevented the oxygen from contacting with the film and effectively protected the inner SiC from oxidizing.

结果表明，薄膜主要以非晶为主，由Si--C键， C--C键和少量Si的氧化物杂质组成；在真空条件下经高温退火后，薄膜C--C键的含量减少，而Si--C键的含量增加，真空退火有利于SiC的形成；在800℃空气中退火后，薄膜表面生成一层致密的SiO2薄层，阻止了氧气与薄膜内部深层的接触，有效保护了内部的SiC。

Generally, there are two stages throughout the reaction of Si〓N〓 and interlayer. At the first stage, the liquid Cu enwraps Nb phase, and Nb diffuses into the Cu. The reaction layer of NbN and Nb〓Si was caused between Nb and Si〓N〓.

第二阶段，Cu全部熔化，Ni向液态金属中扩散溶解，形成Cu-Nb-Ni液态合金，液态合金中的Nb、Ni向Si〓N〓界面扩散并与之反应形成由NbN、Nb〓Si和Ni〓Si组成的反应层。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。