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Si相关的网络例句
与 Si 相关的网络例句 [注:此内容来源于网络,仅供参考]

A nano-Si composite anode material was found to exhibit an extremely high reversible capacity over 1700mAh/g Si, good cyclic performance and endurability under larger current density.

研究发现纳米硅复合负极材料在室温二次锂电池中表现出较好的循环性,可逆容量达到1700mAh/g,而且具有良好的动力学行为。

Instead, the erosion resistance is increased after FSP. The refined and uniformly distributed second phases, which are resulted from the FSP, can help to increase the hardness and further reduce the brittle fracture of the specimens. Si and nvAl3CuNi phases are usually found near or end of the grooves with little fracture. But the τ1 (Al9FeNi) phase is easier to be removed by the erodent cutting. It can be inferred that Si and nvAl3CuNi are useful to improve the erosion resistance of A384 aluminum alloy, but τ1 (Al9FeNi) phase is detrimental for the erosion resistance of A384 aluminum alloy.

经摩擦搅拌制程改质后,硬度提升,晶出相细化且均匀分布,降低脆性龟裂的现象发生,有助於改善A384铝合金的磨耗性质,其中,亦发现在冲蚀沟槽附近有残留和脆性破裂之共晶Si颗粒和nvAl3CuNiw晶出相,推测此两相为A384铝合金中有助提升磨耗阻抗的第二相;而τ1(Al9FeNi)晶出相则容易受到冲蚀颗粒的切削而被冲蚀颗粒移除,增加材料的重量损失,推测τ1(Al9FeNi)晶出相为A384铝合金中较不耐磨耗的晶出相。

Recent data have provided clear insights into some aspects of self-recognition and rejection in the SI response of three types,the single-locus sporophytic and two distinct forms of single-locus gametophytic SI.

高等植物在长期的进化过程中,通过雌蕊识别并拒绝遗传上相近的花粉,防止近亲繁殖、保持遗传多样性,该机制被称为植物自交不亲和性。

Objective To study the effects of Si-ni Powder, Xiao-yao Powder and Si-junzi Decoction on chronic unpredictable mild stress model's BDNF and CREB gene expression changes in hippocamp of rat.

目的:探讨慢性应激肝郁模型大鼠海马BDNF、CREB基因表达及疏肝、疏肝健脾与健脾三种方剂的效应。

The recent development of grain refining, interaction between Si and grain refiners, and grain refining mechanisms in hypoeutectic Al-Si casting alloys are overviewed in this paper.

仅对Al-Si铸造合金细化处理的最新进展、Si与晶粒细化剂的交互作用和晶粒细化机理进行综合评述。

The current theory and application of Al-Si alloy mainly focus on the study of hypoeutectic and eutectic, therefore we systematically analyzed the modification process of hypereutectic Al-Si alloy based on the methods and results of predecessors. Several factors including the modification temperature, the content of modifier, the available holding time, the times of repeat melting , the casting temperature and the speed for cooling have been studied in order to understand its effects to the composition, function and performances of primary silicon and eutectic silicon.

中文摘要本文针对目前Al-Si合金相关应用和理论的研究多集中于亚共晶和共晶合金的情况,在前人的研究成果和研究方法的基础上,对过共晶Al-Si合金变质处理进行了较为系统的分析,研究了变质剂的成分配比、变质温度、变质剂的加入量、变质后的静置时间、浇注温度及冷却速度等因素对过共晶铝硅合金中初晶硅和共晶硅的大小、形状、数量和分布的影响。

The current theory and application of Al-Si alloy mainly focus on the study of hypoeutectic and eutectic, therefore we systematically analyzed the modification process of hypereutectic Al-Si alloy based on the methods and results of predecessors. Several factors including the modification temperature, the content of modifier, the available holding time, the times of repeat melting , the casting temperature and the speed for cooling have been studied in order to understand its effects to the composition, function and performances of primary silicon and eutectic silicon.

本文针对目前Al-Si合金相关应用和理论的研究多集中于亚共晶和共晶合金的情况,在前人的研究成果和研究方法的基础上,对过共晶Al-Si合金变质处理进行了较为系统的分析,研究了变质剂的成分配比、变质温度、变质剂的加入量、变质后的静置时间、浇注温度及冷却速度等因素对过共晶铝硅合金中初晶硅和共晶硅的大小、形状、数量和分布的影响。

The nc-Si/c-Si heterojunction MAGFET manufactured by CMOS process owns inequipotential potentials VHO, which increases with increasing absolute value of supply voltage VDS.

摘 要:采用CMOS工艺制作的纳米硅/单晶硅异质结MAGFET存在不等位电势VHO,不等位电势VHO随工作电压VDS绝对值增加而增大。

The experiment result shows, when extra magnetic field B=0, and supply voltage VDS is constant, inequipotential potentials VHO of the nc-Si/c-Si heterojunction MAGFET are close to zero output with increasing absolute value of the gate biased voltage VGS. Adopting gate biased voltage to compensate inequipotential potentials, compared with extra compensation resistance method, could improve magnetic sensor sensitivity, when supply voltage VDS is -1.0 V, magnetic sensitivity can be improved by 18%.

实验结果表明,当外加磁场B=0时,工作电压VDS恒定时,随栅极偏置电压VGS 绝对值增加,纳米硅/单晶硅异质结MAGFET不等位电势VHO逐渐接近零位输出;采用栅极偏置电压进行不等位电势补偿较外加补偿电阻方法可以使磁传感器灵敏度得到提高,在工作电压VDS为-1.0 V时磁灵敏度约提高18%。

Through adding biased voltage VGS to gate of the nc-Si/c-Si heterojunction MAGFET, the inequipotential potentials are compensated by adjusting equivalent resistance values of conducting channels.

通过在纳米硅/单晶硅异质结MAGFET栅极上外加偏置电压VGS,调整导电沟道等效电阻阻值进行不等位电势补偿。

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相关中文对照歌词
Caminando Y Meando
C'est Si Bon
Sí, Sí, Sí
Guatagato
Si Tu No Te Fueras
No Me Lastimes
Si Saliera Petróleo
Si
Bagsakan
Pa' Qué
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