查询词典 Si

Characterization of etching of Al film and Si substrate with 10% tetramethylammonium hydroxide has been done at a condition of adding various amount of Si dust.

研究了浓度为10%的四甲基氢氧化铵溶液，在不同量的Si粉掺杂下，对铝膜及硅衬底的腐蚀及其pH值的变化。

These results above indicated that ordered mesoporous titanosilicate with different Si/Ti molar ratio could be obtained using trimeric surfactant C_(14-2-14-2-14) as templating agent and the Si/Ti ratio could be as low as 5 without the losing of mesostructure ordering.

上述结果说明以自组装能力强的三聚表面活性剂C_(14-2-14-2-14)为模板剂可以制得不同钛含量的介孔硅钛酸盐材料，尤其是可以得到Si／Ti比低至5的高钛含量介孔硅钛酸盐材料，这对于提高此类材料的氧化催化性能有重要意义。

The latter has only one PL band peaking at about 1.48eV,while the former is a double-band PL spectrum with peaks at both 1.48eV and 1.97eV.The electroluminescenceform the Au／scored Si-rich SiO2 film／p-Si sample is about 6 times in intensity of that of the Au／unscored one.

未刻划样品的PL谱只有一个峰，位于840nm(1.48eV)，而刻划样品的PL谱是双峰结构，峰位分别位于630nm(1.97eV)和840nm.800℃退火的刻划富硅二氧化硅/p-Si样品在背面蒸铝制成欧姆接触和正面蒸上半透明金电极后在正向偏压10V下的电致发光强度约为同样制备的未经刻划样品在同样测试条件下的EL强度的6倍。

SI could abolish the effect of L-NMMA on vasomotion but L-NMMA did not influence the effect of SI on vasomotion.

在L—NMMA的有效作用时间内应用SI可使被抑制于收缩状态的血管重新扩张。

A high content of Si can result in the precipitation of Laves phase and the increment ofε phase.

Si含量高于 0 。45 at%，合金中析出颗粒状laves相，且随 Si含量增加，ε，L aves等第二相数量增多。

The fact that the interface state density at C〓/Si (111) interface is low indicates that C〓 has passivates the Si surface.

低界面态密度的C〓／Si界面的出现，表明C〓膜钝化了硅表面。

It was found that boron not only broke up the α-Ti dendrite, but also accelerated Si atoms to spread toward the interface of dendrite of supersaturating β-Ti solid solution and restrained the nucleation and growth of Ti〓Si〓 phases.

研究表明，适量的Al对Ti-Si共晶合金也有很好的强化和韧化作用（σ=1763MPa，ε〓=8.5％）。

The results showed that in CHINARE 6, the consumptions of NO 3 N、PO 4 P、SiO 3 Si were 1064.8、69.2、2196.9mmol/m 2,the uptake ratio of N and Si to P were 15 3, 31.7,respectively, and new production was 992.4 mgC/(m 2·d); and that in CHINARE 9, the depletions of NO 3 N、PO 4 P was 551.9、41.2mmol/m 2,respectively,the uptake ratio of N to P was 13.4,and the new production was 390.1 mgC/(m 2·d),indicating significant annual and /or seasonal variation.

结果表明在CHINARE－6期间，NO3－N、PO4－P、SiO3－Si消耗分别为1064.8、69.2、2196.9mmol／m2，NP、SiP吸收比分别为15.3、31.7，平均新生产力为992.4mgC／（m2d）。在CHINARE－9期间，NO3－N、PO4－P消耗分别为551.9、41.2mmol／m2，NP吸收比为13.4，平均新生产力390.1mgC／（m2d），表现出很大的季节和／或年际变化。

The analysis also indicates that a rearrangement of atoms has occurred in the Si (001) surface and, while a majority of surface atoms form bonds and dimerize, a minority still exist as non-bonding atoms.

本论文对Si（001）2×1表面再构、低能粒子轰击对再构表面的影响以及在Si（111）表面低能沉积类金刚石膜进行了分子动力学模拟研究。

The TiN/Si〓N〓 coatings were composed of TiN nanocrystallites with grain size of no more than 5 nm and amorphous Si〓N〓 phase.

本文首先使用离子束辅助沉积方法制备TiN薄膜和TiN／Si〓N〓纳米复合薄膜。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。